Patents by Inventor Nian Ji

Nian Ji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TUNNELING MAGNETORESISTIVE (TMR) SENSOR WITH A SOFT BIAS LAYER
    Publication number: 20160163338
    Abstract: An apparatus according to one embodiment includes a read sensor. The read sensor has an antiferromagnetic layer (AFM), a first antiparallel magnetic layer (AP1 ) positioned above the AFM layer in a first direction oriented along a media-facing surface and perpendicular to a track width direction, a non-magnetic layer positioned above the AP1 in the first direction, a second antiparallel magnetic layer (AP2) positioned above the non-magnetic layer in the first direction, a harrier layer positioned above the AP2 in the first direction, and a free layer positioned above the barrier layer in the first direction. A soft bias layer is positioned behind at least a portion of the free layer in an element height direction normal to the media-facing surface, the soft bias layer including a soft magnetic material configured to compensate for a magnetic coupling of the free layer with the AP2.
    Type: Application
    Filed: December 3, 2014
    Publication date: June 9, 2016
    Applicant: HGST Netherlands B.V.
    Inventors: Kuok S. Ho, Nian Ji, Quang Le, Ying Li, Simon H. Liao, Guangli Liu, Xiaoyong Liu, Suping Song, Shuxia Wang, Hualiang Yu