Patents by Inventor Nian Wang

Nian Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240132907
    Abstract: The disclosure relates to a plant that is tolerant or resistant to species of Ca. Liberibacter. Specifically exemplified are citrus and solanaceous plants. Provided by the disclosure is a modified citrus or solanaceous plant that is resistant or tolerant to Sec-dependent effectors secreted by bacteria. Also provided by the disclosure are methods of modifying a plant genome plant to provide tolerance or resistance to species of Ca. Liberibacter. Still further provided by the disclosure are methods conferring a population of plants with tolerance or resistance to species of Ca. Liberibacter and screening that population for the plants that are tolerant or resistant to species of Ca. Liberibacter.
    Type: Application
    Filed: December 28, 2022
    Publication date: April 25, 2024
    Inventor: Nian WANG
  • Publication number: 20240128216
    Abstract: A bonding structure that may be used to form 3D-IC devices is formed using first oblong bonding pads on a first substrate and second oblong bonding pads one a second substrate. The first and second oblong bonding pads are laid crosswise, and the bond is formed. Viewed in a first cross-section, the first bonding pad is wider than the second bonding pad. Viewed in a second cross-section at a right angle to the first, the second bonding pad is wider than the first bonding pad. Making the bonding pads oblong and angling them relative to one another reduces variations in bonding area due to shifts in alignment between the first substrate and the second substrate. The oblong shape in a suitable orientation may also be used to reduce capacitive coupling between one of the bonding pads and nearby wires.
    Type: Application
    Filed: January 4, 2023
    Publication date: April 18, 2024
    Inventors: Hao-Lin Yang, Kuan-Chieh Huang, Wei-Cheng Hsu, Tzu-Jui Wang, Ching-Chun Wang, Hsiao-Hui Tseng, Chen-Jong Wang, Dun-Nian Yaung
  • Publication number: 20240102256
    Abstract: A foldable windproof unit, a large-span windproof net structure thereof, and a windproof method are disclosed. The foldable windproof unit comprises a flexible windproof net, towers arranged at intervals, and a load-bearing rope erected on the two towers. The tower on one side is provided with a horizontal pulley assembly, and the tower on the other side is provided with two vertical pulleys. The top edge of the flexible windproof net is slidably connected to the load-bearing rope by means of a plurality of hanging structures. The foldable windproof unit further comprises a traction rope, the traction rope is arranged on the horizontal pulley assembly in a sleeving manner, and the two free ends of the traction rope extend to respectively bypass the two vertical pulleys and are connected to winding mechanism. The hanging structure close to the tower on one side is fixedly connected to the traction rope.
    Type: Application
    Filed: November 29, 2022
    Publication date: March 28, 2024
    Applicant: SHIJIAZHUANG TIEDAO UNIVERSITY
    Inventors: Qingkuan LIU, Xiaobing CHAI, Yifei SUN, Zhen LI, Xi WANG, Nian LIU, Yangxue WANG, Xing CHANG, Saifei FU
  • Publication number: 20240096918
    Abstract: A device structure according to the present disclosure may include a first die having a first substrate and a first interconnect structure, a second die having a second substrate and a second interconnect structure, and a third die having a third interconnect structure and a third substrate. The first interconnect structure is bonded to the second substrate via a first plurality of bonding layers. The second interconnect structure is bonded to the third interconnect structure via a second plurality of bonding layers. The third substrate includes a plurality of photodiodes and a first transistor. The second die includes a second transistor having a source connected to a drain of the first transistor, a third transistor having a gate connected to drain of the first transistor and the source of the second transistor, and a fourth transistor having a drain connected to the source of the third transistor.
    Type: Application
    Filed: January 17, 2023
    Publication date: March 21, 2024
    Inventors: Hao-Lin Yang, Tzu-Jui Wang, Wei-Cheng Hsu, Cheng-Jong Wang, Dun-Nian Yuang, Kuan-Chieh Huang
  • Publication number: 20240096784
    Abstract: Some embodiments of the present disclosure relate to an integrated chip including an extended via that spans a combined height of a wire and a via and that has a smaller footprint than the wire. The extended via may replace a wire and an adjoining via at locations where the sizing and the spacing of the wire are reaching lower limits. Because the extended via has a smaller footprint than the wire, replacing the wire and the adjoining via with the extended via relaxes spacing and allows the size of the pixel to be further reduced. The extended via finds application for capacitor arrays used for pixel circuits.
    Type: Application
    Filed: January 3, 2023
    Publication date: March 21, 2024
    Inventors: Meng-Hsien Lin, Hsing-Chih Lin, Ming-Tsong Wang, Min-Feng Kao, Kuan-Hua Lin, Jen-Cheng Liu, Dun-Nian Yaung, Ko Chun Liu
  • Publication number: 20240097121
    Abstract: The present invention relates to a negative electrode material comprising a hydrogen storage alloy and a coating layer on a surface of the hydrogen storage alloy. Based on the mass of the negative electrode active material, a content of the coating layer is no less than 2 wt %. The coating layer comprises a component shown by a general formula LnFx, wherein Ln is one element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc. The present invention also relates to a preparation method for the above-described negative electrode material. The present invention also relates to a nickel-metal hydride secondary battery using this negative electrode material.
    Type: Application
    Filed: October 11, 2022
    Publication date: March 21, 2024
    Inventors: Jean NEI, Zhitao CHEN, Nian LIU, Mingde WANG, Shuang ZHANG
  • Publication number: 20240079434
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor including first chip and a second chip. The first chip includes a first substrate, a plurality of photodetectors disposed in the first substrate, a first interconnect structure disposed on a front side of the first substrate, and a first bond structure disposed on the first interconnect structure. The second chip underlies the first chip. The second chip includes a second substrate, a plurality of semiconductor devices disposed on the second substrate, a second interconnect structure disposed on a front side of the second substrate, and a second bond structure disposed on the second interconnect structure. A first bonding interface is disposed between the second bond structure and the first bond structure. The second interconnect structure is electrically coupled to the first interconnect structure by way of the first and second bond structures.
    Type: Application
    Filed: January 5, 2023
    Publication date: March 7, 2024
    Inventors: Hao-Lin Yang, Kuan-Chieh Huang, Wei-Cheng Hsu, Tzu-Jui Wang, Chen-Jong Wang, Dun-Nian Yaung, Yu-Chun Chen
  • Publication number: 20240072090
    Abstract: Various embodiments of the present disclosure are directed towards a stacked complementary metal-oxide semiconductor (CMOS) image sensor in which a pixel sensor spans multiple integrated circuit (IC) chips and is devoid of a shallow trench isolation (STI) structure at a photodetector of the pixel sensor. The photodetector and a first transistor form a first portion of the pixel sensor at a first IC chip. A plurality of second transistors forms a second portion of the pixel sensor at a second IC chip. By omitting the STI structure at the photodetector, a doped well surrounding and demarcating the pixel sensor may have a lesser width than it would otherwise have. Hence, the doped well may consume less area of the photodetector. This, in turn, allows enhanced scaling down of the pixel sensor.
    Type: Application
    Filed: January 5, 2023
    Publication date: February 29, 2024
    Inventors: Chi-Hsien Chung, Tzu-Jui Wang, Tzu-Hsuan Hsu, Chen-Jong Wang, Dun-Nian Yaung
  • Publication number: 20230257762
    Abstract: The disclosure relates to a plant that is tolerant or resistant to species of Ca. Liberibacter. Specifically exemplified are citrus and solanaceous plants. Provided by the disclosure is a modified citrus or solanaceous plant that is resistant or tolerant to Sec-dependent effectors secreted by bacteria. Also provided by the disclosure are methods of modifying a plant genome plant to provide tolerance or resistance to species of Ca. Liberibacter. Still further provided by the disclosure are methods conferring a population of plants with tolerance or resistance to species of Ca. Liberibacter and screening that population for the plants that are tolerant or resistant to species of Ca. Liberibacter.
    Type: Application
    Filed: December 28, 2022
    Publication date: August 17, 2023
    Inventor: Nian WANG
  • Patent number: 11634725
    Abstract: The disclosure relates to a plant that is tolerant or resistant to species of Ca. Liberibacter. Specifically exemplified are citrus and solanaceous plants. Provided by the disclosure is a modified citrus or solanaceous plant that is resistant or tolerant to Sec-dependent effectors secreted by bacteria. Also provided by the disclosure are methods of modifying a plant genome plant to provide tolerance or resistance to species of Ca. Liberibacter. Still further provided by the disclosure are methods conferring a population of plants with tolerance or resistance to species of Ca. Liberibacter and screening that population for the plants that are tolerant or resistant to species of Ca. Liberibacter.
    Type: Grant
    Filed: November 5, 2018
    Date of Patent: April 25, 2023
    Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
    Inventor: Nian Wang
  • Publication number: 20220282266
    Abstract: Disclosed herein are methods and materials for editing genes in citrus cells. Specifically exemplified is the implementation of an optimized Cas9 and the CRISPR type II class nuclease. Also exemplified is the use of a U6-1 promoter for driving expressing of editing constructs in citrus cells. Various protocols and sequences for editing genes are disclosed as well.
    Type: Application
    Filed: August 3, 2020
    Publication date: September 8, 2022
    Inventors: Nian WANG, Xiaoen HUANG, Tirtha LAMICHHANE, Ali PARSAEIMEHR, Su HANG, Shumig WANG
  • Publication number: 20210155952
    Abstract: The disclosure relates to a plant that is tolerant or resistant to species of Ca. Liberibacter. Specifically exemplified are citrus and solanaceous plants. Provided by the disclosure is a modified citrus or solanaceous plant that is resistant or tolerant to Sec-dependent effectors secreted by bacteria. Also provided by the disclosure are methods of modifying a plant genome plant to provide tolerance or resistance to species of Ca. Liberibacter. Still further provided by the disclosure are methods conferring a population of plants with tolerance or resistance to species of Ca. Liberibacter and screening that population for the plants that are tolerant or resistant to species of Ca. Liberibacter.
    Type: Application
    Filed: November 5, 2018
    Publication date: May 27, 2021
    Inventor: Nian WANG
  • Patent number: 10941412
    Abstract: The invention pertains to a plant cell or a plant having one or more mutations in the promoters of both the alleles for CsLOB1 gene, wherein the one or more mutations are in the promoter binding sites for PthA4 protein from Xanthomonas spp., and wherein the one or more mutations reduce or abolish the binding of the Xanthomonas spp. PthA4 protein on to the binding sites in the promoters of the CsLOB1 genes. Also, a plant cell or a plant having one or more mutations in the coding regions of both the alleles for CsLOB1 gene, wherein the one or more mutations reduce or abolish the binding of the function of CsLOB1 protein are provided. The invention further pertains to the methods of making the plant cell or the plant resistant to infection by Xanthomonas spp.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: March 9, 2021
    Assignee: University of Florida Research Foundation, Incorporated
    Inventors: Nian Wang, Hongge Jia
  • Patent number: 10774342
    Abstract: The invention pertains to a plant cell or a plant having one or more mutations in the promoters of both the alleles for CsLOB1 gene, wherein the one or more mutations are in the promoter binding sites for PthA4 protein from Xanthomonas spp., and wherein the one or more mutations reduce or abolish the binding of the Xanthomonas spp. PthA4 protein on to the binding sites in the promoters of the CsLOB1 genes. Also, a plant cell or a plant having one or more mutations in the coding regions of both the alleles for CsLOB1 gene, wherein the one or more mutations reduce or abolish the binding of the function of CsLOB1 protein are provided. The invention further pertains to the methods of making the plant cell or the plant resistant to infection by Xanthomonas spp.
    Type: Grant
    Filed: September 1, 2016
    Date of Patent: September 15, 2020
    Assignee: University of Florida Research Foundation, Inc.
    Inventors: Nian Wang, Hongge Jia
  • Publication number: 20190367941
    Abstract: The invention pertains to a plant cell or a plant having one or more mutations in the promoters of both the alleles for CsLOB1 gene, wherein the one or more mutations are in the promoter binding sites for PthA4 protein from Xanthomonas spp., and wherein the one or more mutations reduce or abolish the binding of the Xanthomonas spp. PthA4 protein on to the binding sites in the promoters of the CsLOB1 genes. Also, a plant cell or a plant having one or more mutations in the coding regions of both the alleles for CsLOB1 gene, wherein the one or more mutations reduce or abolish the binding of the function of CsLOB1 protein are provided. The invention further pertains to the methods of making the plant cell or the plant resistant to infection by Xanthomonas spp.
    Type: Application
    Filed: June 12, 2019
    Publication date: December 5, 2019
    Inventors: Nian WANG, Hongge Jia
  • Publication number: 20190352663
    Abstract: Provided herein are genetically modified citrus plants having enhanced resistance to Huanglongbing (HLB) and methods of producing such plants by overexpressing a papain-like cysteine protease (PLCP) polypeptide to overcome the function of Sec-delivered effector 1 (SDE1).
    Type: Application
    Filed: April 30, 2019
    Publication date: November 21, 2019
    Inventors: Wenbo MA, Gitta COAKER, Nian WANG
  • Patent number: 10111431
    Abstract: Citrus canker caused by the bacterium Xanthomonas citri subsp. citri (Xac) is an economically important disease of citrus worldwide. Biofilm formation plays an important role in early infection of Xac on host leaves. In this study, we assessed the hypothesis that small molecules able to inhibit biofilm formation reduce Xac infection and enhance the control of citrus canker disease. D-leucine and 3-indolylacetonitrile (IAN) were found to prevent biofilm formation by Xac on different abiotic surfaces and host leaves at a concentration lower than the minimum inhibitory concentration (MIC). Quantitative realtime reverse transcription polymerase chain reaction (qRT-PCR) analysis indicated that IAN repressed expression of chemotaxis/motility-related genes in Xac. In laboratory experiments, planktonic and biofilm cells of Xac treated with D-leucine and IAN, either alone or in combination, were more susceptible to copper (CuSO4) than those untreated.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: October 30, 2018
    Assignee: University of Florida Research Foundation, Inc.
    Inventors: Nian Wang, Jinyun Li
  • Publication number: 20180245096
    Abstract: The invention pertains to a plant cell or a plant having one or more mutations in the promoters of both the alleles for CsLOB1 gene, wherein the one or more mutations are in the promoter binding sites for PthA4 protein from Xanthomonas spp., and wherein the one or more mutations reduce or abolish the binding of the Xanthomonas spp. PthA4 protein on to the binding sites in the promoters of the CsLOB1 genes. Also, a plant cell or a plant having one or more mutations in the coding regions of both the alleles for CsLOB1 gene, wherein the one or more mutations reduce or abolish the binding of the function of CsLOB1 protein are provided. The invention further pertains to the methods of making the plant cell or the plant resistant to infection by Xanthomonas spp.
    Type: Application
    Filed: September 1, 2016
    Publication date: August 30, 2018
    Inventors: NIAN WANG, HONGGE JIA
  • Publication number: 20170278418
    Abstract: A method for testing finger dexterity which is applied to a device for testing finger dexterity. The device comprises a testing mechanism with base part, sensor, metal conductive sheet, and processing unit. The base part defines a screw hole defining a first conductive point, the metal conductive sheet defines a second conductive point. The sensor detects a screw inserted into the screw hole, and produces an induction signal. The circuit board produces a trigger signal when the screw makes contact with the first conductive point and the second conductive point. The processing unit receives and analyzes the time lengths between signals and repetitions of signals, and generates a testing result accordingly as a measure of manual dexterity.
    Type: Application
    Filed: March 21, 2017
    Publication date: September 28, 2017
    Inventors: YUNG-NIAN WANG, XIAO-MAN NI, GUO-RONG HU
  • Pen
    Patent number: D892215
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: August 4, 2020
    Inventors: David A. Laemle, Nian Wang