Abstract: The present invention relates to the technical field of semiconductor manufacturing, and in particular, to a method for forming a semiconductor structure and a semiconductor structure. The method for forming a semiconductor structure comprises: forming an interconnect layer and a conductive layer covered on a surface of the interconnect layer; forming a protective layer covering a surface of the conductive layer away from the interconnect layer; forming a trench penetrating the protective layer and the conductive layer; and filling a dielectric layer in the trench, and forming an air gap in the dielectric layer, the air gap extending from the trench in the conductive layer into the trench in the protective layer.

Abstract: Embodiments relate to a semiconductor structure and a fabrication method thereof. The semiconductor structure includes: a substrate, the substrate including a peripheral region and a chip region; a first dielectric layer positioned on the peripheral region and the chip region of the substrate; and a protective structure and a functional structure respectively positioned in the first dielectric layer on the peripheral region and in the first dielectric layer on the chip region. The protective structure includes a first subportion, a second subportion and a third subportion stacked in sequence, and the functional structure includes a fourth subportion and a fifth subportion stacked in sequence. A total height of the first subportion, the second subportion and the third subportion is equal to a total height of the fourth subportion and the fifth subportion.

Abstract: Embodiments of the present application provide a semiconductor device and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate; an integrated circuit region formed in the semiconductor substrate; and a seal ring arranged in the semiconductor substrate and around the integrated circuit region and configured to protect the integrated circuit region, wherein the seal ring has a wavy structure.