Abstract: The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include hydrogen peroxide in an amount that is no greater than 15% by weight of the total weight of the solution. The solution can also include a quaternary ammonium hydroxide and water. Further, the solution can include an amine, a co-solvent, or both. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the solution.

Abstract: Stripping compositions are described that are useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays. The stripping compositions may be suitable for removing photoresists, including acrylic-based negative dry film photoresist, from electronic devices. In one embodiment, the stripping compositions can include a polar protic solvent, an amine or alkanoamine, and a quaternary ammonium hydroxide. In one embodiment the stripping compositions can include a polar protic solvent and at least two alkanoamines. The stripping compositions may be free of polar aprotic solvents.

Abstract: A process for cleaning a semi-conductor wafer comprising providing etched wafer containing metal pillars, contacting the etched wafer with a cleaning solution, removing the wafer from the cleaning solution, wherein the resulting wafer is substantially free of post etch residues and photoresist residues without etching the metal pillars by the cleaning solution, the cleaning solution comprising: A. a polar aprotic solvent, B. an inorganic base; C. a co-solvent for said inorganic base; D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; and E. an organic base comprising an amine compound. The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.

Abstract: The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include hydrogen peroxide in an amount that is no greater than 15% by weight of the total weight of the solution. The solution can also include a quaternary ammonium hydroxide and water. Further, the solution can include an amine, a co-solvent, or both. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the solution.