Abstract: In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.

Abstract: An apparatus includes first and fourth bypasses, a current detector, and a current controller. The first bypass is connected serially to a first LED, and controls the current amount in the first LED. The fourth bypass is connected serially to a second LED, and controls the current amount in the first and second LEDs. The detector detects current detection signal based on the current amount on an output line along which the first and second LEDs are connected serially to each other. The controller provides control signal for controlling the first and fourth bypasses based on the detection signal. The controller includes one output for providing the control signal. The first and fourth bypasses are connected in parallel to the one output.

Abstract: A light emitting device includes a board, a light emitting element, and a transparent member. The light emitting element is mounted on the board. The transparent member seals the light emitting element. The transparent member is disposed around a periphery of the board and the light emitting element. The transparent member comprises a phosphor therein.

Abstract: A semiconductor laser device having stable heat dissipation property is provided. The semiconductor laser device includes a semiconductor laser element, a mounting body on which the semiconductor laser element is mounted, and a base body connected to the mounting body. The base body has a recess configured to engage with the mounting body and a through portion penetrating through a part of a bottom of the recess. In the specification, the remainder, which is a part of the bottom of the recess except for the through portion has a thickness equal or less than half of the largest thickness of the base body. The lowermost surface of the mounting body is spaced apart from the lowermost surface of the base body through the remainder.

Abstract: The present invention provides a surface mounted light emitting apparatus which has long service life and favorable property for mass production, and a molding used in the surface mounted light emitting apparatus. The surface mounted light emitting apparatus comprises the light emitting device 10 based on GaN which emits blue light, the first resin molding 40 which integrally molds the first lead 20 whereon the light emitting device 10 is mounted and the second lead 30 which is electrically connected to the light emitting device 10, and the second resin molding 50 which contains YAG fluorescent material and covers the light emitting device 10. The first resin molding 40 has the recess 40c comprising the bottom surface 40a and the side surface 40b formed therein, and the second resin molding 50 is placed in the recess 40c.

Abstract: A light emitting device includes a plurality of light emitting elements, a plurality of lead frames, and a package. The light emitting elements are mounted on the lead frames. The package is made of resin. The package has an opening. A part of the lead frames is embedded in an inner portion of the package and another part of the lead frames is exposed on a bottom surface of the opening. A resin bottom surface on which the resin is exposed is provided on the bottom surface of the opening of the package. The package includes a wall portion projecting from the bottom surface of the opening between the light emitting elements in the opening. The light emitting elements are connected by wire that straddles the wall portion.

Abstract: A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

Abstract: A molded package includes a molded resin and a lead. The molded resin has a recess portion provided on an upper surface of the molded resin to accommodate a light emitting component. The lead is partially exposed from a bottom surface of the recess portion of the molded resin to be electrically connected to the light emitting component and extends below a side wall of the recess portion. The lead has a groove formed on a surface of the lead at least partially along the side wall. The groove has an inside upper edge and an outside upper edge and is filled with the molded resin so that the inside upper edge is exposed from the bottom surface of the recess portion and the outside upper edge is embedded within the molded resin.

Abstract: In a method for manufacturing a cylindrical bonded magnet, a molding space having a cylindrical shape is filled with a bonded magnet composition containing a magnetic material and a resin. The magnetic material disposed in the molding space is magnetically oriented using an orientation magnet. The orientation magnet includes a first permanent magnet and a second permanent magnet. The first and second permanent magnets are disposed such that same poles are opposite each other in the axial direction.

Abstract: In method of manufacturing a light emitting device, a substrate is provided, and metallization is established on an upper surface of the substrate. A light emitting element is mounted on top of the metallization, and the metallization and light emitting element are electrically connected. The surfaces of metallization and at least side surface of the light emitting element are continuously covered with insulating material. Light reflective resin is provided over the insulating material at a position surrounding the light emitting element to reflect light from the light emitting element.

Abstract: A light emitting device has a base comprising at least one pair of leads having a silver-containing layer on their surfaces and being secured by a resin molded body, a light emitting element mounted on said leads, a protective film made of an inorganic material that covers the upper surface of said base, and a sealing resin disposed on the base surface via said protective film. The sealing resin has a first resin that covers said light emitting element, and a second resin having a higher hardness than said first resin that covers the boundaries between said resin molded body and said leads.

Abstract: A method for fabricating a semiconductor light emitting device is provided. The method includes forming a semiconductor light emitting portion including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a light emitting layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The method also includes forming a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; forming a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer; and forming an insulator film covering the semiconductor light emitting portion, such that a first portion of the insulator film is surrounded by the second conductivity-type semiconductor side electrode and is separated from the second conductivity-type semiconductor side electrode by a separation area.

Abstract: The present invention provides a molded package for a light emitting device including a molded resin and first and second leads, the exposed surface of the first lead having a first and second edge portions opposed to each other so as to put a mounting area therebetween in a first direction, the first and second edge portions respectively having one first cutout and second cutouts, the mounting area having a size not less than a distance between the first and the second cutouts and less than a distance between the first the second edge portions in the first direction.

Abstract: A method for manufacturing a light emitting device having a light emitting element and a resin layer containing fluorescent material particles and a filler which reflects light comprises a fluorescent material precipitation process for precipitating the fluorescent material particles in advance of the filler. A light emitting device comprises a base body; a light emitting element mounted on an upper surface of the base body via a mounting portion; and a sealing resin for sealing the light emitting element. The sealing resin comprises: a fluorescent material-containing first layer for covering the light emitting element on and above the mounting portion, a fluorescent material-containing second layer formed on an upper surface of the base body around the mounting portion, and a filler-containing layer formed on the fluorescent material-containing second layer around the mounting portion.

Abstract: A light source apparatus is provided which uses a plurality of semiconductor laser devices and which offers adequate heat dissipation. The light source apparatus using a plurality of semiconductor laser devices includes a holding member on which the plurality of semiconductor laser devices is arranged, wherein at least one semiconductor laser device among the plurality of semiconductor laser devices is arranged on the holding member such that a relative position of the semiconductor laser device in an optical axis direction with respect to an adjacent semiconductor laser device in a front view of the holding member is greater than a relative position of the semiconductor laser device in a direction perpendicular to the optical axis direction with respect to the adjacent semiconductor laser device.

Abstract: A method of manufacturing a light emitting device includes: disposing a group of electrically conductive members on a support substrate, the group of the electrically conductive members forming a plurality of mounting portions arranged in two or more columns and two or more rows with the mounting portions respectively corresponding to a plurality of light emitting elements; placing the light emitting elements on the group of the electrically conductive members with a bonding member being disposed between the light emitting elements and the electrically conductive members, each of the light emitting elements being shifted from a corresponding one of the mounting portions; and melting the bonding member to mount the light emitting elements respectively on the mounting portions by self-alignment effect generated by the melting of the bonding member.

Abstract: A method controls a display that includes a display portion, a scanner, and a driver. The display portion includes light emitting elements arranged in a matrix form. The scanner is connected to common lines each of which is connected to corresponding elements that are arranged in a corresponding row. The scanner applies a voltage to a selected common line. The driver is connected to driving lines each of which is connected to corresponding elements that are arranged in a corresponding column. The driver activates selected elements. The method controls the display whereby displaying an image in each cycle including frames. The voltage is applied to the selected one of the common lines in a lighting frame in which the light emitting elements are driven in one cycle. The scanner is prevented from applying the voltage in a non-lighting frame in which the elements are not driven in the one cycle.

Abstract: A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element 100 has a light emitting structure of a semiconductor 20 on a first main surface of a substrate 10. The first main surface of the substrate 10 has substrate protrusion portion 11, the bottom surface 14 of each protrusion is wider than the top surface 13 thereof in a cross-section, or the top surface 13 is included in the bottom surface 14 in a top view of the substrate. The bottom surface 14 has an approximately polygonal shape, and the top surface 13 has an approximately circular or polygonal shape with more sides than that of the bottom surface 14.

Abstract: A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode.

Abstract: A method of manufacturing a semiconductor laser element including: preparing a wafer; forming first grooves on at least one of an upper surface and a lower surface of the wafer, each of the first grooves being spaced apart from the optical waveguide formed in the wafer and extending in a direction intersecting the optical waveguide in a plan view; forming second grooves on the one of the upper surface and the lower surface of the wafer, each of the second grooves extending in a direction intersecting a straight line extended from each of the first grooves, and each of the second grooves having a smooth surface compared with the first grooves; dividing the wafer along the first grooves to obtain a plurality of laser bars; and dividing the laser bars in a direction intersecting an extending direction of the first grooves to obtain the semiconductor laser elements.