Patents by Inventor Nicholas A. Fichtenbaum

Nicholas A. Fichtenbaum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor deposition
    Patent number: 8455885
    Abstract: Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (?m sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: June 4, 2013
    Assignee: The Regents of the University of California
    Inventors: Stacia Keller, Umesh K. Mishra, Nicholas A. Fichtenbaum
  • METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AIN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
    Publication number: 20120193638
    Abstract: Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (?m sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.
    Type: Application
    Filed: April 11, 2012
    Publication date: August 2, 2012
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Stacia Keller, Umesh K. Mishra, Nicholas A. Fichtenbaum
  • Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AIN and their alloys by metal organic chemical vapor deposition
    Patent number: 7566580
    Abstract: Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (?m sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.
    Type: Grant
    Filed: September 14, 2007
    Date of Patent: July 28, 2009
    Assignee: The Regents of the University of California
    Inventors: Stacia Keller, Umesh Kumar Mishra, Nicholas A. Fichtenbaum
  • LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GaN, InN, AND AlN AND THEIR ALLOYS
    Publication number: 20080111144
    Abstract: The present invention allows the growth of InGaN with greater compositions of Indium than traditionally available now, which pushes LED and LD wavelengths into the yellow and red portions of the color spectrum. The ability to grow with Indium at higher temperatures leads to a higher quality AlInGaN. This also allows for novel polarization-based band structure designs to create more efficient devices. Additionally, it allows the fabrication of p-GaN layers with increased conductivity, which improves device performance.
    Type: Application
    Filed: November 15, 2007
    Publication date: May 15, 2008
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Nicholas A. Fichtenbaum, Umesh K. Mishra, Stacia Keller
  • METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AlN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
    Publication number: 20080113496
    Abstract: Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (?m sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.
    Type: Application
    Filed: September 14, 2007
    Publication date: May 15, 2008
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Stacia Keller, Umesh Kumar Mishra, Nicholas A. Fichtenbaum