Patents by Inventor Nicholas Fichtenbaum
Nicholas Fichtenbaum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9865719Abstract: A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the reactor, thereby carbon doping the III-N semiconductor layer and causing the III-N semiconductor layer to be insulating or semi-insulating. A semiconductor device can include a substrate and a carbon doped insulating or semi-insulating III-N semiconductor layer on the substrate. The carbon doping density in the III-N semiconductor layer is greater than 5×1018 cm?3 and the dislocation density in the III-N semiconductor layer is less than 2×109 cm?2.Type: GrantFiled: January 8, 2016Date of Patent: January 9, 2018Assignee: Transphorm Inc.Inventors: Stacia Keller, Brian L. Swenson, Nicholas Fichtenbaum
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Patent number: 9685323Abstract: Embodiments of the present disclosure include a buffer structure suited for III-N device having a foreign substrate. The buffer structure can include a first buffer layer having a first aluminum composition and a second buffer layer formed on the first buffer layer, the second buffer layer having a second aluminum composition. The buffer structure further includes a third buffer layer formed on the second buffer layer at a second interface, the third buffer layer having a third aluminum composition. The first aluminum composition decreases in the first buffer layer towards the interface and the second aluminum composition throughout the second buffer layer is greater than the first aluminum composition at the interface.Type: GrantFiled: October 16, 2015Date of Patent: June 20, 2017Assignee: Transphorm Inc.Inventors: Stacia Keller, Brian L. Swenson, Nicholas Fichtenbaum
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Publication number: 20160133737Abstract: A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the reactor, thereby carbon doping the III-N semiconductor layer and causing the III-N semiconductor layer to be insulating or semi-insulating. A semiconductor device can include a substrate and a carbon doped insulating or semi-insulating III-N semiconductor layer on the substrate. The carbon doping density in the III-N semiconductor layer is greater than 5×1018 cm?3 and the dislocation density in the III-N semiconductor layer is less than 2×109 cm?2.Type: ApplicationFiled: December 29, 2015Publication date: May 12, 2016Inventors: Stacia Keller, Brian L. Swenson, Nicholas Fichtenbaum
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Publication number: 20160126342Abstract: A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the reactor, thereby carbon doping the III-N semiconductor layer and causing the III-N semiconductor layer to be insulating or semi-insulating. A semiconductor device can include a substrate and a carbon doped insulating or semi-insulating III-N semiconductor layer on the substrate. The carbon doping density in the III-N semiconductor layer is greater than 5×1018 cm?3 and the dislocation density in the III-N semiconductor layer is less than 2×109 cm?2.Type: ApplicationFiled: January 8, 2016Publication date: May 5, 2016Inventors: Stacia Keller, Brian L. Swenson, Nicholas Fichtenbaum
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Patent number: 9293561Abstract: A III-N device is described has a buffer layer, a first III-N material layer on the buffer layer, a second III-N material layer on the first III-N material layer on an opposite side from the buffer layer and a dispersion blocking layer between the buffer layer and the channel layer. The first III-N material layer is a channel layer and a compositional difference between the first III-N material layer and the second III-N material layer induces a 2DEG channel in the first III-N material layer. A sheet or a distribution of negative charge at an interface of the channel layer and the dispersion blocking layer confines electrons away from the buffer layer.Type: GrantFiled: April 25, 2014Date of Patent: March 22, 2016Assignee: Transphorm Inc.Inventors: Umesh Mishra, Lee McCarthy, Nicholas Fichtenbaum
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Publication number: 20160042946Abstract: Embodiments of the present disclosure include a buffer structure suited for III-N device having a foreign substrate. The buffer structure can include a first buffer layer having a first aluminum composition and a second buffer layer formed on the first buffer layer, the second buffer layer having a second aluminum composition. The buffer structure further includes a third buffer layer formed on the second buffer layer at a second interface, the third buffer layer having a third aluminum composition. The first aluminum composition decreases in the first buffer layer towards the interface and the second aluminum composition throughout the second buffer layer is greater than the first aluminum composition at the interface.Type: ApplicationFiled: October 16, 2015Publication date: February 11, 2016Inventors: Stacia Keller, Brian L. Swenson, Nicholas Fichtenbaum
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Patent number: 9257547Abstract: Embodiments of the present disclosure includes a III-N device having a substrate layer, a first III-N material layer on one side of the substrate layer, a second III-N material layer on the first III-N material layer, and a barrier layer disposed on another side of the substrate layer, the barrier layer being less electrically conductive than the substrate layer.Type: GrantFiled: September 13, 2011Date of Patent: February 9, 2016Assignee: Transphorm Inc.Inventors: Nicholas Fichtenbaum, Lee McCarthy, Yifeng Wu
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Patent number: 9245993Abstract: A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the reactor, thereby carbon doping the III-N semiconductor layer and causing the III-N semiconductor layer to be insulating or semi-insulating. A semiconductor device can include a substrate and a carbon doped insulating or semi-insulating III-N semiconductor layer on the substrate. The carbon doping density in the III-N semiconductor layer is greater than 5×1018 cm?3 and the dislocation density in the III-N semiconductor layer is less than 2×109 cm?2.Type: GrantFiled: March 13, 2014Date of Patent: January 26, 2016Assignee: Transphorm Inc.Inventors: Stacia Keller, Brian L. Swenson, Nicholas Fichtenbaum
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Patent number: 9245992Abstract: A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the reactor, thereby carbon doping the III-N semiconductor layer and causing the III-N semiconductor layer to be insulating or semi-insulating. A semiconductor device can include a substrate and a carbon doped insulating or semi-insulating III-N semiconductor layer on the substrate. The carbon doping density in the III-N semiconductor layer is greater than 5×1018 cm?3 and the dislocation density in the III-N semiconductor layer is less than 2×109 cm?2.Type: GrantFiled: March 13, 2014Date of Patent: January 26, 2016Assignee: Transphorm Inc.Inventors: Stacia Keller, Brian L. Swenson, Nicholas Fichtenbaum
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Patent number: 9224671Abstract: A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and electrode, a high thermal conductivity carrier capable of transferring substantial heat away from the III-N device, and a bonding layer between the thick insulating layer and the carrier. The bonding layer attaches the thick insulating layer to the carrier. The thick insulating layer can have a precisely controlled thickness and be thermally conductive.Type: GrantFiled: October 23, 2014Date of Patent: December 29, 2015Assignee: Transphorm Inc.Inventors: Primit Parikh, Yuvaraj Dora, Yifeng Wu, Umesh Mishra, Nicholas Fichtenbaum, Rakesh K. Lal
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Patent number: 9171836Abstract: An electronic component includes a depletion-mode transistor, an enhancement-mode transistor, and a resistor. The depletion-mode transistor has a higher breakdown voltage than the enhancement-mode transistor. A first terminal of the resistor is electrically connected to a source of the enhancement-mode transistor, and a second terminal of the resistor and a source of the depletion-mode transistor are each electrically connected to a drain of the enhancement-mode transistor. A gate of the depletion-mode transistor can be electrically connected to a source of the enhancement-mode transistor.Type: GrantFiled: September 5, 2014Date of Patent: October 27, 2015Assignee: Transphorm Inc.Inventors: Rakesh K. Lal, Robert Coffie, Yifeng Wu, Primit Parikh, Yuvaraj Dora, Umesh Mishra, Srabanti Chowdhury, Nicholas Fichtenbaum
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Patent number: 9165766Abstract: Embodiments of the present disclosure include a buffer structure suited for III-N device having a foreign substrate. The buffer structure can include a first buffer layer having a first aluminum composition and a second buffer layer formed on the first buffer layer, the second buffer layer having a second aluminum composition. The buffer structure further includes a third buffer layer formed on the second buffer layer at a second interface, the third buffer layer having a third aluminum composition. The first aluminum composition decreases in the first buffer layer towards the interface and the second aluminum composition throughout the second buffer layer is greater than the first aluminum composition at the interface.Type: GrantFiled: February 3, 2012Date of Patent: October 20, 2015Assignee: Transphorm Inc.Inventors: Stacia Keller, Brian L. Swenson, Nicholas Fichtenbaum
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Publication number: 20150041861Abstract: A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and electrode, a high thermal conductivity carrier capable of transferring substantial heat away from the III-N device, and a bonding layer between the thick insulating layer and the carrier. The bonding layer attaches the thick insulating layer to the carrier. The thick insulating layer can have a precisely controlled thickness and be thermally conductive.Type: ApplicationFiled: October 23, 2014Publication date: February 12, 2015Inventors: Primit Parikh, Yuvaraj Dora, Yifeng Wu, Umesh Mishra, Nicholas Fichtenbaum, Rakesh K. Lal
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Publication number: 20140377930Abstract: An electronic component includes a depletion-mode transistor, an enhancement-mode transistor, and a resistor. The depletion-mode transistor has a higher breakdown voltage than the enhancement-mode transistor. A first terminal of the resistor is electrically connected to a source of the enhancement-mode transistor, and a second terminal of the resistor and a source of the depletion-mode transistor are each electrically connected to a drain of the enhancement-mode transistor. A gate of the depletion-mode transistor can be electrically connected to a source of the enhancement-mode transistor.Type: ApplicationFiled: September 5, 2014Publication date: December 25, 2014Inventors: Rakesh K. Lal, Robert Coffie, Yifeng Wu, Primit Parikh, Yuvaraj Dora, Umesh Mishra, Srabanti Chowdhury, Nicholas Fichtenbaum
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Patent number: 8895421Abstract: A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and electrode, a high thermal conductivity carrier capable of transferring substantial heat away from the III-N device, and a bonding layer between the thick insulating layer and the carrier. The bonding layer attaches the thick insulating layer to the carrier. The thick insulating layer can have a precisely controlled thickness and be thermally conductive.Type: GrantFiled: December 11, 2013Date of Patent: November 25, 2014Assignee: Transphorm Inc.Inventors: Primit Parikh, Yuvaraj Dora, Yifeng Wu, Umesh Mishra, Nicholas Fichtenbaum, Rakesh K. Lal
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Publication number: 20140342512Abstract: A III-N device is described has a buffer layer, a first III-N material layer on the buffer layer, a second III-N material layer on the first III-N material layer on an opposite side from the buffer layer and a dispersion blocking layer between the buffer layer and the channel layer. The first III-N material layer is a channel layer and a compositional difference between the first III-N material layer and the second III-N material layer induces a 2DEG channel in the first III-N material layer. A sheet or a distribution of negative charge at an interface of the channel layer and the dispersion blocking layer confines electrons away from the buffer layer.Type: ApplicationFiled: April 25, 2014Publication date: November 20, 2014Applicant: Transphorm Inc.Inventors: Umesh Mishra, Lee McCarthy, Nicholas Fichtenbaum
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Patent number: 8860495Abstract: An electronic component includes a depletion-mode transistor, an enhancement-mode transistor, and a resistor. The depletion-mode transistor has a higher breakdown voltage than the enhancement-mode transistor. A first terminal of the resistor is electrically connected to a source of the enhancement-mode transistor, and a second terminal of the resistor and a source of the depletion-mode transistor are each electrically connected to a drain of the enhancement-mode transistor. A gate of the depletion-mode transistor can be electrically connected to a source of the enhancement-mode transistor.Type: GrantFiled: October 31, 2013Date of Patent: October 14, 2014Assignee: Transphorm Inc.Inventors: Rakesh K. Lal, Robert Coffie, Yifeng Wu, Primit Parikh, Yuvaraj Dora, Umesh Mishra, Srabanti Chowdhury, Nicholas Fichtenbaum
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Publication number: 20140264455Abstract: A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the reactor, thereby carbon doping the III-N semiconductor layer and causing the III-N semiconductor layer to be insulating or semi-insulating. A semiconductor device can include a substrate and a carbon doped insulating or semi-insulating III-N semiconductor layer on the substrate. The carbon doping density in the III-N semiconductor layer is greater than 5×1018 cm?3 and the dislocation density in the III-N semiconductor layer is less than 2×109 cm?2.Type: ApplicationFiled: March 13, 2014Publication date: September 18, 2014Applicant: Transphorm Inc.Inventors: Stacia Keller, Brian L. Swenson, Nicholas Fichtenbaum
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Publication number: 20140264370Abstract: A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the reactor, thereby carbon doping the III-N semiconductor layer and causing the III-N semiconductor layer to be insulating or semi-insulating. A semiconductor device can include a substrate and a carbon doped insulating or semi-insulating III-N semiconductor layer on the substrate. The carbon doping density in the III-N semiconductor layer is greater than 5×1018 cm?3 and the dislocation density in the III-N semiconductor layer is less than 2×109 cm?2.Type: ApplicationFiled: March 13, 2014Publication date: September 18, 2014Applicant: Transphorm Inc.Inventors: Stacia Keller, Brian L. Swenson, Nicholas Fichtenbaum
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Patent number: 8742459Abstract: A III-N device is described has a buffer layer, a first III-N material layer on the buffer layer, a second III-N material layer on the first III-N material layer on an opposite side from the buffer layer and a dispersion blocking layer between the buffer layer and the channel layer. The first III-N material layer is a channel layer and a compositional difference between the first III-N material layer and the second III-N material layer induces a 2DEG channel in the first III-N material layer. A sheet or a distribution of negative charge at an interface of the channel layer and the dispersion blocking layer confines electrons away from the buffer layer.Type: GrantFiled: May 14, 2009Date of Patent: June 3, 2014Assignee: Transphorm Inc.Inventors: Umesh Mishra, Lee McCarthy, Nicholas Fichtenbaum