Patents by Inventor Nicholas H. Tripsas
Nicholas H. Tripsas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8368219Abstract: A buried local interconnect and method of forming the same counterdopes a region of a doped substrate to form a counterdoped isolation region. A hardmask is formed and patterned on the doped substrate, with a recess being etched through the patterned hardmask into the counterdoped region. Dielectric spacers are formed on the sidewalls of the recess, with a portion of the bottom of the recess being exposed. A metal is then deposited in the recess and reacted to form silicide at the bottom of the recess. The recess is filled with fill material, which is polished. The hardmask is then removed to form a silicide buried local interconnect.Type: GrantFiled: October 26, 2011Date of Patent: February 5, 2013Assignees: Advanced Micro Devices, Inc., Spansion LLCInventors: Arvind Halliyal, Zoran Krivokapic, Matthew S. Buynoski, Nicholas H. Tripsas, Minh Van Ngo, Mark T. Ramsbey, Jeffrey A. Shields, Jusuke Ogura
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Publication number: 20120038051Abstract: A buried local interconnect and method of forming the same counterdopes a region of a doped substrate to form a counterdoped isolation region. A hardmask is formed and patterned on the doped substrate, with a recess being etched through the patterned hardmask into the counterdoped region. Dielectric spacers are formed on the sidewalls of the recess, with a portion of the bottom of the recess being exposed. A metal is then deposited in the recess and reacted to form silicide at the bottom of the recess. The recess is filled with fill material, which is polished. The hardmask is then removed to form a silicide buried local interconnect.Type: ApplicationFiled: October 26, 2011Publication date: February 16, 2012Applicants: SPANSION LLC, ADVANCED MICRO DEVICES, INC.Inventors: Arvind Halliyal, Zoran Krivokapic, Matthew S. Buynoski, Nicholas H. Tripsas, Minh Van Ngo, Mark T. Ramsbey, Jeffery A. Shields, Jusuke Ogura
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Patent number: 8049334Abstract: A buried local interconnect and method of forming the same counterdopes a region of a doped substrate to form a counterdoped isolation region. A hardmask is formed and patterned on the doped substrate, with a recess being etched through the patterned hardmask into the counterdoped region. Dielectric spacers are formed on the sidewalls of the recess, with a portion of the bottom of the recess being exposed. A metal is then deposited in the recess and reacted to form silicide at the bottom of the recess. The recess is filled with fill material, which is polished. The hardmask is then removed to form a silicide buried local interconnect.Type: GrantFiled: July 26, 2010Date of Patent: November 1, 2011Assignee: Advanced Micro Devices, Inc.Inventors: Arvind Halliyal, Zoran Krivokapic, Matthew S. Buynoski, Nicholas H. Tripsas, Minh Van Ngo, Mark T. Ramsbey, Jeffrey A. Shields, Jusuke Ogura
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Patent number: 8044387Abstract: Disclosed are semiconductor memory devices containing a plastic substrate and at least one active device supported by the plastic substrate, the active device containing an organic semiconductor material. The semiconductor memory devices containing a plastic substrate may further contain a polymer dielectric and/or a conductive polymer.Type: GrantFiled: July 7, 2004Date of Patent: October 25, 2011Assignee: Spansion LLCInventors: Matthew S. Buynoski, Uzodinma Okoroanyanwu, Suzette K. Pangrle, Nicholas H. Tripsas
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Patent number: 8012673Abstract: Disclosed are organic semiconductor devices containing a copolymer layer that contains a polymer dielectric and a semiconducting polymer formed using actinic radiation. As initially formed, the copolymer layer has dielectric properties, but portions may selectively rendered conductive after those portions are exposed to actinic radiation. Also disclosed are methods of making the organic semiconductor devices. Such devices are characterized by light weight and robust reliability.Type: GrantFiled: March 1, 2005Date of Patent: September 6, 2011Assignee: Spansion LLCInventors: Suzette K. Pangrle, Matthew S. Buynoski, Nicholas H. Tripsas, Uzodinma Okoroanyanwu
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Patent number: 8003436Abstract: The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.Type: GrantFiled: December 3, 2008Date of Patent: August 23, 2011Assignee: Spansion LLCInventors: Nicholas H. Tripsas, Uzodinma Okoroanyanwu, Suzette K. Pangrle, Michael A. VanBuskirk
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Patent number: 7786003Abstract: A buried local interconnect and method of forming the same counterdopes a region of a doped substrate to form a counterdoped isolation region. A hardmask is formed and patterned on the doped substrate, with a recess being etched through the patterned hardmask into the counterdoped region. Dielectric spacers are formed on the sidewalls of the recess, with a portion of the bottom of the recess being exposed. A metal is then deposited in the recess and reacted to form silicide at the bottom of the recess. The recess is filled with fill material, which is polished. The hardmask is then removed to form a silicide buried local interconnect.Type: GrantFiled: May 25, 2005Date of Patent: August 31, 2010Assignees: Advanced Micro Devices, Inc., Spansion LLCInventors: Arvind Halliyal, Zoran Krivokapic, Matthew S. Buynoski, Nicholas H. Tripsas, Minh Van Ngo, Mark T. Ramsbey, Jeffery A. Shields, Jusuke Ogura
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Patent number: 7696017Abstract: The invention facilitates manufacture of semiconductor memory components by reducing the number of layers required to implement a semiconductor memory device. The invention provides for a selection element to be formed in the same layer as one of the control lines (e.g. one of the wordline and bitline). In one embodiment of the invention, a diode is implemented as the selection element within the same layer as one of the control lines. Production of the selection element within the same layer as one of the wordline and bitline reduces problems associated with vertical stacking, increases device yield and reduces related production costs. The invention also provides an efficient method of producing memory devices with the selection element in the same layer as one of the control lines.Type: GrantFiled: June 18, 2008Date of Patent: April 13, 2010Assignee: Spansion LLCInventors: Nicholas H. Tripsas, Suzette Paugrle
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Patent number: 7670936Abstract: A method of manufacturing a semiconductor device includes forming an interface layer, a nitrided gate dielectric, a gate electrode, and source drain regions. The interface layer is formed in a substrate by laser processing. The nitrided gate dielectric is formed over the interface layer by laser processing. The gate electrode is formed over the substrate and the gate dielectric after the laser processing step, and source/drain regions are formed in the substrate proximate to the gate electrode.Type: GrantFiled: October 18, 2002Date of Patent: March 2, 2010Assignee: Advanced Micro Devices, Inc.Inventors: Arvind Halliyal, Nicholas H. Tripsas, Mark T. Ramsbey
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Patent number: 7632706Abstract: A system and method are disclosed for processing an organic memory cell. An exemplary system can employ an enclosed processing chamber, a passive layer formation component operative to form a passive layer on a first electrode, and an organic semiconductor layer formation component operative to form an organic semiconductor layer on the passive layer. A wafer substrate is not needed to transfer from a passive layer formation system to an organic semiconductor layer formation system. The passive layer is not exposed to air after formation of the passive layer and before formation of the organic semiconductor layer. As a result, conductive impurities caused by the exposure to air do not occur in the thin film layer, thus improving productivity, quality, and reliability of organic memory devices. The system can further employ a second electrode formation component operative to form a second electrode on the organic semiconductor layer.Type: GrantFiled: October 21, 2005Date of Patent: December 15, 2009Assignee: Spansion LLCInventors: Nicolay F. Yudanov, Igor Sokolik, Richard P. Kingsborough, William G. Leonard, Suzette K. Pangrle, Nicholas H. Tripsas, Minh Van Ngo
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Patent number: 7561465Abstract: One embodiment of the invention relates to a method for refreshing a nonvolatile memory array. In the method, a threshold voltage of a multi-bit memory cell is analyzed to determine if it has drifted outside of a number of allowable voltage windows, wherein each allowable voltage windows corresponds to a different multi-bit value. If the threshold voltage of the cell has drifted outside of the number of allowable voltage states, then the cell is recovered by adjusting at least one voltage boundary of at least one of the number of allowable voltage states.Type: GrantFiled: March 16, 2007Date of Patent: July 14, 2009Assignees: Advanced Micro Devices, Inc., Spansion LLCInventors: Bryan William Hancock, Nicholas H. Tripsas, Richard C. Blish, II
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Publication number: 20090081824Abstract: The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.Type: ApplicationFiled: December 3, 2008Publication date: March 26, 2009Applicant: SPANSION LLCInventors: Nicholas H. Tripsas, Uzodinma Okoroanyanwu, Suzette K. Pangrle, Michael A. VanBuskirk
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Patent number: 7465956Abstract: The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.Type: GrantFiled: October 17, 2005Date of Patent: December 16, 2008Assignee: Advanced Micro Devices, Inc.Inventors: Nicholas H. Tripsas, Uzodinma Okoroanyanwu, Suzette K. Pangrle, Michael A. VanBuskirk
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Publication number: 20080175054Abstract: One embodiment of the invention relates to a method for refreshing a nonvolatile memory array. In the method, a threshold voltage of a multi-bit memory cell is analyzed to determine if it has drifted outside of a number of allowable voltage windows, wherein each allowable voltage windows corresponds to a different multi-bit value. If the threshold voltage of the cell has drifted outside of the number of allowable voltage states, then the cell is recovered by adjusting at least one voltage boundary of at least one of the number of allowable voltage states.Type: ApplicationFiled: March 16, 2007Publication date: July 24, 2008Inventors: Bryan William Hancock, Nicholas H. Tripsas, Richard C. Blish
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Patent number: 7391064Abstract: The invention facilitates manufacture of semiconductor memory components by reducing the number of layers required to implement a semiconductor memory device. The invention provides for a selection element to be formed in the same layer as one of the control lines (e.g. one of the wordline and bitline). In one embodiment of the invention, a diode is implemented as the selection element within the same layer as one of the control lines. Production of the selection element within the same layer as one of the wordline and bitline reduces problems associated with vertical stacking, increases device yield and reduces related production costs. The invention also provides an efficient method of producing memory devices with the selection element in the same layer as one of the control lines.Type: GrantFiled: December 1, 2004Date of Patent: June 24, 2008Assignee: Spansion LLCInventors: Nicholas H. Tripsas, Suzette Pangrle
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Patent number: 7361586Abstract: Methods are described for eliminating void formation during the fabrication of and/or operation of memory cells/devices. According to one aspect of the present disclosure, the methods to eliminate voids include formation of an opening on a semiconductor structure, formation of a diffusion barrier layer, deposition of a metal into the opening, preamorphization of the metal using preamorphization implants, and formation of a conductivity facilitating layer. According to another aspect of the present disclosure, the methods to eliminate voids include formation of an opening on a semiconductor structure, formation of a diffusion barrier layer, deposition of a metal into the opening, preamorphization of the metal using a contact with a plasma, and formation of a conductivity facilitating layer.Type: GrantFiled: July 1, 2005Date of Patent: April 22, 2008Assignee: Spansion LLCInventors: Ercan Adem, Nicholas H. Tripsas
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Patent number: 7232765Abstract: Disclosed are methods for facilitating concurrent formation of copper vias and memory element structures. The methods involve forming vias over metal lines and forming copper plugs, wherein the copper plugs comprise memory element film forming copper plugs (memE copper plugs) and non-memory element forming copper plugs (non-memE copper plugs), forming a tantalum-containing cap over an upper surface of non-memE copper plugs, and depositing memory element films. The tantalum-containing cap prevents the formation of the memory element films in the non-memE copper plugs. The subject invention advantageously facilitates cost-effective manufacturing of semiconductor devices.Type: GrantFiled: November 12, 2004Date of Patent: June 19, 2007Assignees: Spansion LLC, Advanced Micro Devices, Inc.Inventors: Steven C. Avanzino, Nicholas H. Tripsas, Jeffrey A. Shields, Fei Wang, Richard P. Kingsborough, William Leonard, Suzette K. Pangrle
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Patent number: 7220642Abstract: A method of fabricating an electronic structure by providing a conductive layer, providing a dielectric layer over the conductive layer, providing first and second openings through the dielectric layer, providing first and second conductive bodies in the first and second openings respectively and in contact with the conductive layer, providing a memory structure over the first conductive body, providing a protective element over the memory structure, and undertaking processing on the second conductive body.Type: GrantFiled: November 12, 2004Date of Patent: May 22, 2007Assignee: Spansion LLCInventors: Steven Avanzino, Igor Sokolik, Suzette Pangrle, Nicholas H. Tripsas, Jeffrey Shields
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Patent number: 7199416Abstract: The subject invention provides systems and methodologies for fabrication of memory and/or selection (e.g., diodes) elements in a recession in a semiconductor layer. In particular, a trench of varying width is created in the semiconductor layer by employing various etching techniques. A metal film can be deposited in the trench according to a desired deposition thickness in order to seam close a narrow portion of the trench while form a dimple in a wide portion of the trench. The trench, after metal film deposition, exhibits a depression in wider trench portions relative to narrow trench portions. The depression can be utilized by placing one or more memory or selection layers in the depression, and a via can be formed over a portion of the trench to form an interconnect.Type: GrantFiled: November 10, 2004Date of Patent: April 3, 2007Assignee: Spansion LLCInventors: Nicholas H. Tripsas, Minh Tran, Jeffrey Shields
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Patent number: 7035141Abstract: The present memory structure includes thereof a first conductor, a second conductor, a resistive memory cell connected to the second conductor, a first diode connected to the resistive memory cell and the first conductor, and oriented in the forward direction from the resistive memory cell to the first conductor, and a second diode connected to the resistive memory cell and the first conductor, in parallel with the first diode, and oriented in the reverse direction from the resistive memory cell to the first conductor. The first and second diodes have different threshold voltages.Type: GrantFiled: November 17, 2004Date of Patent: April 25, 2006Inventors: Nicholas H. Tripsas, Colin S. Bill, Michael A. VanBuskirk, Matthew Buynoski, Tzu-Ning Fang, Wei Daisy Cai, Suzette Pangrle, Steven Avanzino