Abstract: Methods, systems, and computer program products for processing cell samples and training machine learning models are disclosed. Some implementations relate to processing disease cell samples to obtain dynamic response data of the cell samples. Some implementations relate to training machine learning models for mapping therapeutics or stimuli to disease outcomes through dynamic response profiles.

Abstract: A transmission structure having high propagation velocity and a low effective dielectric loss. The structure comprises a dielectric, a first reference conductor disposed below the dielectric, a signal conductor disposed above the dielectric, and a second reference conductor disposed over the signal conductor. The second reference conductor has a recess portion facing the signal conductor, the recess portion defining a gap between the second reference conductor and the signal conductor. The gap may be filled with air which has a relative dielectric constant approximately equal to one (1). Because of the physical and dielectric constant characteristics of the gap, the structure concentrates an electric field in the gap resulting in an effective dielectric constant approximately (approaching) one (1) and an effective dielectric loss approximately equal to zero (0). Thus, the structure exhibits a propagation velocity approximately equal to the speed of light.

Abstract: Image sensors are provided having a plurality of photodetectors in a detector layer Optionally, an optically transparent substrate is provided for a rear-illuminated sensor architecture. The photodetectors may be arranged in three or more arrays. Typically, each array is contiguous and is associated with light of a different color and/or wavelength. In addition, the arrays may be coplanar, or, in the alternative, located at increasing distances from a light-receiving surface in an at least partially nonoverlapping manner. Also provided are image sensor packages.

Abstract: A semiconductor assembly includes plural chips stacked one above the other. One or more of the chips is a magnetic random access memory (MRAM). Use of MRAM alleviates problems caused by heat dissipation in the stack.

Abstract: A transmission structure having high propagation velocity and a low effective dielectric loss. The structure comprises a dielectric, a first reference conductor disposed below the dielectric, a signal conductor disposed above the dielectric, and a second reference conductor disposed over the signal conductor. The second reference conductor has a recess portion facing the signal conductor, the recess portion defining a gap between the second reference conductor and the signal conductor. The gap may be filled with air which has a relative dielectric constant approximately equal to one (1). Because of the physical and dielectric constant characteristics of the gap, the structure concentrates an electric field in the gap resulting in an effective dielectric constant approximately (approaching) one (1) and an effective dielectric loss approximately equal to zero (0). Thus, the structure exhibits a propagation velocity approximately equal to the speed of light.

Abstract: A microelectronic element such as a semiconductor chip has springs such as coil springs bonded to contacts so that the springs serve as electrical connections to a circuit panel. The unit can be tested readily and can be surface-mounted to a circuit panel by bonding the distal ends of the springs, remote from the microelectronic element, to the panel. The springs can also serve as antennas so as to provide a miniaturized phased array.

Abstract: An elongated strip of a sheetlike substrate bearing microelectronic elements such as semiconductor chips is advanced in a downstream direction through one or more folding stations where successive portions of the substrate are folded so as to form a strip including a plurality of fold packages, each including confronting top and bottom runs and a fold region with one or more of the runs bearing one or more microelectronic elements. The strip incorporating the plural fold packages can be wound on a reel or otherwise handled, stored and shipped to a subsequent manufacturing operation, where individual fold packages can be severed from the strip.

Abstract: A system, apparatus and method provide wireless communications to a geographical area. The system includes at least one atmospheric platform serving as a central relay or node using a star network topology for the geographic area. The atmospheric platform carries a payload that comprises communications equipment. The system further includes a plurality of user equipment units located within the geographic area and at least one ground station or gateway for providing an information pathway between the user equipment units. The gateway has network processing and switching equipment for routing the information between the users. A wireless trunkline carries signals between the gateway and the atmospheric platform. The apparatus and method comprise gateway and payload uplink portions and downlink portions. The downlink portions aggregates and de-aggregates user generated information from the platform to the gateway.

Abstract: A process for fabricating a composite material such as that having high thermal conductivity and having specific application as a heat sink or heat spreader for high density integrated circuits. The composite material produced by this process has a thermal conductivity between that of diamond and copper, and basically consists of coated diamond particles dispersed in a high conductivity metal, such as copper. The composite material can be fabricated in small or relatively large sizes using inexpensive materials. The process basically consists, for example, of sputter coating diamond powder with several elements, including a carbide forming element and a brazeable material, compacting them into a porous body, and infiltrating the porous body with a suitable braze material, such as copper-silver alloy, thereby producing a dense diamond-copper composite material with a thermal conductivity comparable to synthetic diamond films at a fraction of the cost.

Abstract: A process for fabricating a composite material such as that having high thermal conductivity and having specific application as a heat sink or heat spreader for high density integrated circuits. The composite material produced by this process has a thermal conductivity between that of diamond and copper, and basically consists of coated diamond particles dispersed in a high conductivity metal, such as copper. The composite material can be fabricated in small or relatively large sizes using inexpensive materials. The process basically consists, for example, of sputter coating diamond powder with several elements, including a carbide forming element and a brazeable material, compacting them into a porous body, and infiltrating the porous body with a suitable braze material, such as copper-silver alloy, thereby producing a dense diamond-copper composite material with a thermal conductivity comparable to synthetic diamond films at a fraction of the cost.

Abstract: A reusable grinding tool consisting of a replaceable single layer of abrasive particles intimately bonded to a precisely configured tool substrate, and a process for manufacturing the grinding tool. The tool substrate may be ceramic or metal and the abrasive particles are preferably diamond, but may be cubic boron nitride. The manufacturing process involves: coating a configured tool substrate with layers of metals, such as titanium, copper and titanium, by physical vapor deposition (PVD); applying the abrasive particles to the coated surface by a slurry technique; and brazing the abrasive particles to the tool substrate by alloying the metal layers. The precision control of the composition and thickness of the metal layers enables the bonding of a single layer or several layers of micron size abrasive particles to the tool surface.

Abstract: A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Abstract: A barrier at a uniform depth for an entire wafer is used to produce imaging devices less susceptible to noise pulses produced by the passage of ionizing radiation. The barrier prevents charge created in the bulk silicon of a CCD detector or a semiconductor logic or memory device from entering the collection volume of each pixel in the imaging device. The charge barrier is a physical barrier, a potential barrier, or a combination of both. The physical barrier is formed by an SiO.sub.2 insulator. The potential barrier is formed by increasing the concentration of majority carriers (holes) to combine with the electron's generated by the ionizing radiation. A manufacturer of CCD imaging devices can produce radiation-tolerant devices by merely changing the wafer type fed into his process stream from a standard wafer to one possessing a barrier beneath its surface, thus introducing a very small added cost to his production cost. An effective barrier type is an SiO.sub.2 layer.

Abstract: This invention uses a dipole magnet to bend the path of a charged particle beam. As the deflected particles exit the magnet, they are spatially dispersed in the bend-plane of the magnet according to their respective momenta and pass to a plurality of chambers having Faraday probes positioned therein. Both the current and energy distribution of the particles is then determined by the non-intersecting Faraday probes located along the chambers. The Faraday probes are magnetically isolated from each other by thin metal walls of the chambers, effectively providing real time current-versus-energy particle measurements.