Abstract: A system with optical interconnects includes first and second optical transceivers. The first optical transceiver includes a first array of micro light emitting diodes (LEDs) arranged on a first carrier substrate, a first array of photodetectors (PDs), and a first driver integrated circuit (IC). The second optical transceiver includes a second array of micro LEDs arranged on a second carrier substrate, a second array of PDs, and a second driver IC. The system also includes at least one multicore fiber cable arranged to optically couple the first array of micro LEDs with the second array of PDs and to optically couple the second array of micro LEDs with the first array of PDs.

Abstract: Methods for manufacturing LED display panel devices include providing donor wafers having LED die configured to emit different color emissions. At least some of the LED die are selectively transferred from the donor wafers to a carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs may include red-green-blue LEDs to form a RGB display panel.

Abstract: In an example, the present invention provides a small form factor package comprising RGB laser diode devices configured with short cavity lengths. In an example, the present laser module includes at least a first red laser diode device, at least a second green laser diode device, and at least a third red laser diode device. At least one of the laser diode devices has a cavity length of less than 200 um, or less than 150 um, or less than 100 um. The optical output beams of the red, green, and blue laser diodes are combined into a single beam or colinear beams using optical techniques. The laser diode devices and the optical combining optics contained in a sealed package device. The sealed package device has a small form factor volume.

Abstract: Electronic devices are formed on donor substrates and transferred to carrier substrates by forming bonding regions on the electronic devices and bonding the bonding regions to a carrier substrate. The transfer process may include forming anchors and removing sacrificial regions.

Abstract: A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.

Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.

Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

Abstract: A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.

Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

Abstract: A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.

Abstract: A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.

Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

Abstract: A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.

Abstract: An optical device capable of emitting light having a wavelength ranging from about 490 to about 580 nanometers has a gallium nitride substrate with a semipolar crystalline surface region characterized by an orientation of greater than 3 degrees from (11-22) towards (0001) but less than about 50 degrees. A laser stripe formed on the substrate has a cavity orientation substantially parallel to the m-direction.

Abstract: A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.

Abstract: The present invention relates generally to a method and apparatus for attaching a close proximity filter to an FPA (focal plane array) and more particularly, to a method and apparatus that allows improved spectral discrimination of a mid-wave infra red (MWIR) detector by applying an improved multi-color filter to a focal plane array (FPA), while employing existing production equipment and techniques to reduce cost and improve production yield.

Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.

Abstract: The present invention relates generally to a method and apparatus for attaching a close proximity filter to an FPA (focal plane array) and more particularly, to a method and apparatuse that allows improved spectral discrimination of an MWIR detector by applying a an improved multi-color filter to an FPA, while employing existing production equipment and techniques to reduce cost and improve production yield.