Abstract: An edge termination structure is disclosed. The edge termination structure includes an active cell in a semiconductor wafer, an edge termination region adjacent the active cell in the semiconductor wafer, where the edge termination region includes a recessed field oxide region and a termination charge region below the recessed field oxide region. The recessed field oxide region may be thermally grown in a recess in the semiconductor wafer. A top surface of the recessed field oxide region is substantially coplanar with a top surface of the semiconductor wafer. The active cell may include at least one insulated-gate bipolar transistor surrounded by the edge termination region in the semiconductor wafer. The termination charge region has a conductivity type opposite of that of the semiconductor wafer. The termination charge region is adjacent to at least one guard ring in the semiconductor wafer.

Abstract: An edge termination structure is disclosed. The edge termination structure includes an active cell in a semiconductor wafer, an edge termination region adjacent the active cell in the semiconductor wafer, where the edge termination region includes a recessed field oxide region and a termination charge region below the recessed field oxide region. The recessed field oxide region may be thermally grown in a recess in the semiconductor wafer. A top surface of the recessed field oxide region is substantially coplanar with a top surface of the semiconductor wafer. The active cell may include at least one insulated-gate bipolar transistor surrounded by the edge termination region in the semiconductor wafer. The termination charge region has a conductivity type opposite of that of the semiconductor wafer. The termination charge region is adjacent to at least one guard ring in the semiconductor wafer.

Abstract: An edge termination structure is disclosed. The edge termination structure includes an active cell in a semiconductor wafer, an edge termination region adjacent the active cell in the semiconductor wafer, where the edge termination region includes recessed field oxide regions and guard rings adjacent to the active cell. At least one of the guard rings has a depth greater than a depth of at least one of the recessed field oxide regions. A top surface of each of the recessed field oxide regions is substantially coplanar with a top surface of the semiconductor wafer and with a top surface of each of the guard rings. The recessed field oxide regions may be thermally grown in recesses in the semiconductor wafer. The recessed field oxide regions may include silicon dioxide.