Patents by Inventor Nicholas P. T. Bateman

Nicholas P. T. Bateman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220028693
    Abstract: An apparatus and method of processing a workpiece is disclosed, where a sacrificial capping layer is created on a top surface of a workpiece. That workpiece is then exposed to an ion implantation process, where select species are used to passivate the workpiece. While the implant process is ongoing, radicals and excited species etch the sacrificial capping layer. This reduces the amount of etching that the workpiece experiences. In certain embodiments, the thickness of the sacrificial capping layer is selected based on the total time used for the implant process and the etch rate. The total time used for the implant process may be a function of desired dose, bias voltage, plasma power and other parameters. In some embodiments, the sacrificial capping layer is applied prior to the implant process. In other embodiments, material is added to the sacrificial capping layer during the implant process.
    Type: Application
    Filed: July 22, 2020
    Publication date: January 27, 2022
    Inventors: Vikram M. Bhosle, Nicholas P.T. Bateman, Timothy J. Miller, Jun Seok Lee, Deven Raj Mittal
  • Patent number: 10825653
    Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: November 3, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: John W. Graff, Bon-Woong Koo, John A. Frontiero, Nicholas P. T. Bateman, Timothy J. Miller, Vikram M. Bholse
  • Patent number: 10804075
    Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.
    Type: Grant
    Filed: November 14, 2016
    Date of Patent: October 13, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: John W. Graff, Bon-Woong Koo, John A. Frontiero, Nicholas P T Bateman, Timothy J. Miller, Vikram M. Bhosle
  • Patent number: 10290466
    Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.
    Type: Grant
    Filed: November 10, 2017
    Date of Patent: May 14, 2019
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Vikram M. Bhosle, John A. Frontiero, Nicholas P. T. Bateman, Timothy J. Miller, Svetlana B. Radovanov, Min-Sung Jeon, Peter F. Kurunczi, Christopher J. Leavitt
  • Publication number: 20190027341
    Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.
    Type: Application
    Filed: September 21, 2018
    Publication date: January 24, 2019
    Inventors: John W. Graff, Bon-Woong Koo, John A. Frontiero, Nicholas P.T. Bateman, Timothy J. Miller, Vikram M. Bholse
  • Publication number: 20180068830
    Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.
    Type: Application
    Filed: November 10, 2017
    Publication date: March 8, 2018
    Inventors: Bon-Woong Koo, Vikram M. Bhosle, John A. Frontiero, Nicholas P.T. Bateman, Timothy J. Miller, Svetlana B. Radovanov, Min-Sung Jeon, Peter F. Kurunczi, Christopher J. Leavitt
  • Patent number: 9865430
    Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.
    Type: Grant
    Filed: November 23, 2015
    Date of Patent: January 9, 2018
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Vikram M. Bhosle, John A. Frontiero, Nicholas P.T. Bateman, Timothy J. Miller, Svetlana B. Radovanov, Min-Sung Jeon, Peter F. Kurunczi, Christopher J. Leavitt
  • Patent number: 9863032
    Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.
    Type: Grant
    Filed: November 24, 2014
    Date of Patent: January 9, 2018
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kevin M. Daniels, Russell J. Low, Nicholas P. T. Bateman, Benjamin B. Riordon
  • Patent number: 9722129
    Abstract: A method of processing a solar cell is disclosed, where a chained patterned ion implant is performed to create a workpiece having a lightly doped surface having more heavily doped regions. This configuration may be used in various embodiments, such as for selective emitter solar cells. Additionally, various mask sets that can be used to create this desired pattern are also disclosed. The mask set may include one or more masks that have an open portion and a patterned portion, where the union of the open portions of the masks comprises the entirety of the surface to be implanted. The patterned portions of the masks combine to create the desired pattern of heavily doped regions.
    Type: Grant
    Filed: February 9, 2015
    Date of Patent: August 1, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Nicholas P T Bateman, Benjamin Riordan, William T. Weaver
  • Patent number: 9478679
    Abstract: A method of processing a solar cell is disclosed, where the edges of the solar cell are covered, coated or masked during the ion implantation process and/or the screen printing process. This covering may be a substance that blocks the penetration of ions during implantation, or may be a substance that resists the diffusion of fritted metal paste during the metallization process. In some embodiments, the edges are covered during both of these processes. In further embodiments, the same material may perform both functions.
    Type: Grant
    Filed: November 24, 2014
    Date of Patent: October 25, 2016
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Nicholas P. T. Bateman, Vikram M. Bhosle, Bon-Woong Koo
  • Patent number: 9455368
    Abstract: A method of forming an interdigitated back contact solar cell is described. The method uses a deposition process to create a doped glass layer on the substrate, which, when diffused, created either the emitter or back surface fields. The deposition process may also create an oxide layer on top of the doped glass layer. This oxide layer serves as a mask for a subsequent ion implant. This ion implant directs ions having the opposite conductivity of the doped glass layer into exposed regions of the substrate. A thermal process is used to diffuse the dopant from the doped glass layer into the substrate and repair any damage caused by the ion implant.
    Type: Grant
    Filed: July 3, 2014
    Date of Patent: September 27, 2016
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventor: Nicholas P T Bateman
  • Publication number: 20160163510
    Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.
    Type: Application
    Filed: November 23, 2015
    Publication date: June 9, 2016
    Inventors: Bon-Woong Koo, Vikram M. Bhosle, John A. Frontiero, Nicholas P.T. Bateman, Timothy J. Miller, Svetlana B. Radovanov, Min-Sung Jeon, Peter F. Kurunczi, Christopher J. Leavitt
  • Patent number: 9293623
    Abstract: Techniques for manufacturing a device are disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for forming a solar cell. The method may comprise: implanting p-type dopants into a substrate via a blanket ion implantation process; implanting n-type dopants into the substrate via the blanket ion implantation process; and performing a first annealing process to form the p-type region and performing a second annealing process to form a second n-type region.
    Type: Grant
    Filed: October 26, 2012
    Date of Patent: March 22, 2016
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Nicholas P. T. Bateman, Deepak A. Ramappa
  • Patent number: 9064760
    Abstract: The resistivity of a silicon boule may vary along its length, thereby making a uniform ion implantation process sub-optimal. A system and method for measuring a resistivity of a substrate, and processing the substrate based on that measured resistivity is disclosed. The system includes a resistivity measurement system, a controller and an ion implanting system, where the controller configures the ion implantation process based on the measured resistivity of the substrate.
    Type: Grant
    Filed: May 20, 2013
    Date of Patent: June 23, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Nicholas P. T. Bateman, Paul Sullivan
  • Publication number: 20150162457
    Abstract: A method of processing a solar cell is disclosed, where the edges of the solar cell are covered, coated or masked during the ion implantation process and/or the screen printing process. This covering may be a substance that blocks the penetration of ions during implantation, or may be a substance that resists the diffusion of fritted metal paste during the metallization process. In some embodiments, the edges are covered during both of these processes. In further embodiments, the same material may perform both functions.
    Type: Application
    Filed: November 24, 2014
    Publication date: June 11, 2015
    Inventors: Nicholas P.T. Bateman, Vikram M. Bhosle, Bon-Woong Koo
  • Patent number: 9034743
    Abstract: A method of processing a workpiece is disclosed, where the ion chamber is first coated with the desired dopant species and another species. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant, is introduced to the chamber and ionized. Ions are then extracted from the chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. The other species used during the conditioning process may be a Group 3, 4 or 5 element. The desired dopant species may be boron.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: May 19, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter F. Kurunczi, Bon-Woong Koo, John A. Frontiero, William T. Levay, Christopher J. Leavitt, Timothy J. Miller, Vikram M. Bhosle, John W. Graff, Nicholas P T Bateman
  • Publication number: 20150102237
    Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.
    Type: Application
    Filed: November 24, 2014
    Publication date: April 16, 2015
    Inventors: Kevin M. Daniels, Russell J. Low, Nicholas P.T. Bateman, Benjamin B. Riordon
  • Patent number: 8921149
    Abstract: A first species selectively dopes a workpiece to form a first doped region. In one embodiment, a selective implant is performed using a mask with apertures. A soft mask is applied to the first doped region. A second species is implanted into the workpiece to form a second implanted region. The soft mask blocks a portion of the second species. Then the soft mask is removed. The first species and second species may be opposite conductivities such that one is p-type and the other is n-type.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: December 30, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Nicholas P. T. Bateman, William T. Weaver
  • Patent number: 8912082
    Abstract: Methods to form complementary implant regions in a workpiece are disclosed. A mask may be aligned with respect to implanted or doped regions on the workpiece. The mask also may be aligned with respect to surface modifications on the workpiece, such as deposits or etched regions. A masking material also may be deposited on the implanted regions using the mask. The workpiece may be a solar cell.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: December 16, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Nicholas P. T. Bateman, William T. Weaver, Paul Sullivan, John W. Graff
  • Publication number: 20140352769
    Abstract: A solar cell having a large region where reverse breakdown can occur is disclosed. Reverse breakdown tends to occur near areas where heavily doped n-type regions abut heavily doped p-type regions. Thus, by increasing the region where such a heavily doped p/n junction exists may improve the reverse breakdown characteristics of the solar cell. In addition, a method of making such solar cell is disclosed, where this heavily doped p/n junction is fabricated along at least a portion of the perimeter of the solar cell.
    Type: Application
    Filed: May 29, 2013
    Publication date: December 4, 2014
    Inventor: Nicholas P.T. Bateman