Patents by Inventor Nicholas R. Glavin

Nicholas R. Glavin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10957789
    Abstract: Systems, methods and apparatus incorporating Gallium Nitride heterostructure (Alx,Iny)Ga1-x-y N-materials in flexible, strainable and wearable radio frequency devices. These devices include (Alx,Iny)Ga1-x-y N-based high-electron mobility transistors (HEMTs), which enable amplification of microwave radio frequencies from approximately 300 MHz to approximately 300 GHz for flexible and conformal wireless transmission.
    Type: Grant
    Filed: May 14, 2020
    Date of Patent: March 23, 2021
    Assignee: United States of America as represented by the Secretary of the Air Force
    Inventors: Nicholas R. Glavin, Kelson D. Chabak, Michael R. Snure
  • Patent number: 10692996
    Abstract: Systems, methods and apparatus incorporating Gallium Nitride heterostructure (Alx,Iny)Ga1-x-y N-materials in flexible, strainable and wearable radio frequency devices. These devices include (Alx,Iny)Ga1-x-y N-based high-electron mobility transistors (HEMTs), which enable amplification of microwave radio frequencies from approximately 300 MHz to approximately 300 GHz for flexible and conformal wireless transmission.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: June 23, 2020
    Assignee: United States of America as represented by the Secretary of the Air Force
    Inventors: Nicholas R. Glavin, Kelson D. Chabak, Michael R. Snure
  • Publication number: 20200090933
    Abstract: Methods of making molybdenum sulfide (MoS2) on a stretchable substrate are disclosed. The method includes magnetron sputtering MoS2 onto a stretchable substrate, such as a stretchable polymeric material, at low temperatures to form a film precursor, and illumination annealing the film precursor to form high quality MoS2. The illumination source may be a laser or other source of radiation. Also, two-dimensional nanoelectronic devices made by the methods and/or from the high quality MoS2 are disclosed.
    Type: Application
    Filed: July 31, 2019
    Publication date: March 19, 2020
    Applicant: University of Dayton
    Inventors: Christopher Muratore, Michael E. McConney, Travis E. Shelton, Nicholas R. Glavin, John E. Bultman, Andrey A. Voevodin
  • Publication number: 20180308692
    Abstract: Methods of making molybdenum sulfide (MoS2) on a stretchable substrate are disclosed. The method includes magnetron sputtering MoS2 onto a stretchable substrate, such as a stretchable polymeric material, at low temperatures to form a film precursor, and illumination annealing the film precursor to form high quality MoS2. The illumination source may be a laser or other source of radiation. Also, two-dimensional nanoelectronic devices made by the methods and/or from the high quality MoS2 are disclosed.
    Type: Application
    Filed: April 25, 2018
    Publication date: October 25, 2018
    Applicant: University of Dayton
    Inventors: Christopher Muratore, Michael E. McConney, Travis E. Shelton, Nicholas R. Glavin, John E. Bultman, Andrey A. Voevodin