Patents by Inventor Nicholas Wade Clyde

Nicholas Wade Clyde has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Backside stealth dicing through tape followed by front side laser ablation dicing process
    Patent number: 10373857
    Abstract: A method of forming a plurality of semiconductor devices includes applying a tape material to a back side of a semiconductor device having a silicon layer on the back side and a circuitry layer on the front side, lasing with an infrared laser the silicon layer through the tape material, lasing with a second laser the circuitry layer, and expanding the tape material for form a plurality of semiconductor devices. The second layer may be an ultraviolet laser. The lasers may be irradiated in a pattern on the bottom side and the top side. The second layer may form a groove in the circuitry layer that does not penetrate the silicon layer. The infrared laser may cleave a portion of the silicon lattice of the silicon layer. A coating may be applied to the circuitry layer prior to being irradiated with the second laser.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: August 6, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Andy E. Hooper, Nicholas Wade Clyde
  • Backside Stealth Dicing Through Tape Followed by Front Side Laser Ablation Dicing Process
    Publication number: 20190131160
    Abstract: A method of forming a plurality of semiconductor devices includes applying a tape material to a back side of a semiconductor device having a silicon layer on the back side and a circuitry layer on the front side, lasing with an infrared laser the silicon layer through the tape material, lasing with a second laser the circuitry layer, and expanding the tape material for form a plurality of semiconductor devices. The second layer may be an ultraviolet laser. The lasers may be irradiated in a pattern on the bottom side and the top side. The second layer may form a groove in the circuitry layer that does not penetrate the silicon layer. The infrared laser may cleave a portion of the silicon lattice of the silicon layer. A coating may be applied to the circuitry layer prior to being irradiated with the second laser.
    Type: Application
    Filed: June 25, 2018
    Publication date: May 2, 2019
    Applicant: Micron Technology, Inc.
    Inventors: Andy E. Hooper, Nicholas Wade Clyde
  • Backside stealth dicing through tape followed by front side laser ablation dicing process
    Patent number: 10079169
    Abstract: A method of forming a plurality of semiconductor devices includes applying a tape material to a back side of a semiconductor device having a silicon layer on the back side and a circuitry layer on the front side, lasing with an infrared laser the silicon layer through the tape material, lasing with a second laser the circuitry layer, and expanding the tape material for form a plurality of semiconductor devices. The second layer may be an ultraviolet laser. The lasers may be irradiated in a pattern on the bottom side and the top side. The second layer may form a groove in the circuitry layer that does not penetrate the silicon layer. The infrared laser may cleave a portion of the silicon lattice of the silicon layer. A coating may be applied to the circuitry layer prior to being irradiated with the second laser.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: September 18, 2018
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Andy E. Hooper, Nicholas Wade Clyde