Abstract: A lamp comprises an enclosure that is at least partially optically transmissive. The enclosure comprises an optically transmissive lens and a base where the lens is connected to the base; and a LED board supporting an LED. A first of pins and a second pair of pins are rotatable relative to the enclosure and are in the electrical path supplying power to the LEDs. The lamp is positioned between a pair of tombstone connectors such that the first pair of pins engages the first tombstone connector and the second pair of pins engages the second tombstone connector. The first and second pair of pins are inserted into the tombstone connectors and are rotated to engage the electrical connectors in the tombstone connectors.

Abstract: This disclosure relates to LED based lighting systems, such as surface mounted lighting systems and lighting systems that can connected to an existing grid structure. These lighting systems can be utilized in many settings, for example, as primary lighting systems for a commercial building and for retrofit lighting improvement purposes. Devices according to the present disclosure provide lighting systems capable of mounting to an existing surface, such as a T-bar ceiling structure. These devices can further comprise modular elements which facilitate connections of multiple lighting body components, allowing for multiple lighting arrangements and providing a cost effective and easily configurable lighting design. In some embodiments, multiple lighting components can be attached together by movable joints, allowing further user control over light distribution from the lighting systems.

Abstract: A luminaire including a thin phosphor layer applied to a remote reflector is disclosed. In some embodiments of the luminaire, LEDs illuminate and activate a thin remote phosphor coating applied to a reflective substrate. In some embodiments, the LED light source includes at least one LED with a GaN emitting layer. The LEDs can be packaged with or without a local phosphor. The thin remote phosphor can include red, red/orange, yellow, green or cyan emitting phosphor so that the luminaire produces white light. The thin remote phosphor layer can include two or more different color emitting phosphors. In some embodiments, the luminaire is a light fixture including a diffuser lens assembly and a pan to support the fixture when mounted in a ceiling.

Abstract: A compound semiconductor structure is provided, which includes a GaAs-based supporting semiconductor structure having a surface on which a dielectric material is to be formed. A first layer of gallium oxide is located on the surface of the supporting semiconductor structure to form an interface therewith. A second layer of a Ga—Gd oxide is disposed on the first layer. The GaAs-based supporting semiconductor structure may be a GaAs-based heterostructure such as an at least partially completed semiconductor device (e.g., a metal-oxide field effect transistor, a heterojunction bipolar transistor, or a semiconductor laser). In this manner a dielectric layer structure is provided which has both a low defect density at the oxide-GaAs interface and a low oxide leakage current density because the dielectric structure is formed from a layer of Ga2O3 followed by a layer of Ga—Gd-oxide.

Abstract: A compound semiconductor structure is provided, which includes a GaAs-based supporting semiconductor structure having a surface on which a dielectric material is to be formed. A first layer of gallium oxide is located on the surface of the supporting semiconductor structure to form an interface therewith. A second layer of a Ga—Gd oxide is disposed on the first layer. The GaAs-based supporting semiconductor structure may be a GaAs-based heterostructure such as an at least partially completed semiconductor device (e.g., a metal-oxide field effect transistor, a heterojunction bipolar transistor, or a semiconductor laser). In this manner a dielectric layer structure is provided which has both a low defect density at the oxide-GaAs interface and a low oxide leakage current density because the dielectric structure is formed from a layer of Ga2O3 followed by a layer of Ga—Gd-oxide.

Abstract: A compound semiconductor structure is provided, which includes a GaAs-based supporting semiconductor structure having a surface on which a dielectric material is to be formed. A first layer of gallium oxide is located on the surface of the supporting semiconductor structure to form an interface therewith. A second layer of a Ga—Gd oxide is disposed on the first layer. The GaAs-based supporting semiconductor structure may be a GaAs-based heterostructure such as an at least partially completed semiconductor device (e.g., a metal-oxide field effect transistor, a heterojunction bipolar transistor, or a semiconductor laser). In this manner a dielectric layer structure is provided which has both a low defect density at the oxide-GaAs interface and a low oxide leakage current density because the dielectric structure is formed from a layer of Ga2O3 followed by a layer of Ga—Gd-oxide.