Abstract: Described herein are equilibrative nucleoside transporter inhibitors and methods of making and using same. In some embodiments, the inhibitors are used for the prevention and/or treatment of pain.

Abstract: The present invention provides natural and/or simulated, synthetic, synergistic pesticidal compositions comprising terpenes, such as extracts from Chenopodium ambrosioides near ambrosioides, or compositions based on those found in Chenopodium ambrosioides near ambrosioides. The present invention also provides methods of using said compositions to kill, inhibit, prevent and/or repel plant pests from contacting and/or damaging plants.

Abstract: An electrochemical device including: (a) a semiconductor layer, wherein the semiconductor is silicon or silicon carbide, and where the layer has a thickness from 1 to 1000 ?m; (b) a TiO2 layer on the semiconductor layer, where the layer may include an alkaline earth oxide MO up to an amount where the layer is MtiO3, and where the layer has a thickness from 5 nm to 1 mm; (c) a grid of inert metal on the TiO2 layer, arranged so as to be able to apply a electric field across the TiO2 layer; and (d) an ohmic contact on the semiconductor layer.

Abstract: A semiconductor device includes: a SiC substrate; a silicide layer disposed on the SiC substrate; and a carbide layer disposed on the silicide layer. The silicide layer includes a first metal, and the carbide layer includes a second metal. The first metal is Ni or Ni alloy, and the second metal is Ti, Ta or W. The device provides excellent ohmic contact and high quality surface metallization construction.

Abstract: A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate at a high temperature to cause a solid state chemical reaction between the substrate and the deposited metal that forms a modified layer in the substrate having modified properties different than the substrate, and by-products composed of a silicide and a nanocrystalline graphite layer; selectively etching the substrate to remove one or more of the by-products of the solid state chemical reaction from a surface of the substrate; and depositing a metal film composed of a transition group metal over the modified layer on the substrate to form the ohmic contact. The modified layer permits formation of the ohmic contact without high temperature annealing after depositing the metal film.

Abstract: A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate at a high temperature to cause a solid state chemical reaction between the substrate and the deposited metal that forms a modified layer in the substrate having modified properties different than the substrate, and by-products composed of a silicide and a nanocrystalline graphite layer; selectively etching the substrate to remove one or more of the by-products of the solid state chemical reaction from a surface of the substrate; and depositing a metal film composed of a transition group metal over the modified layer on the substrate to form the ohmic contact. The modified layer permits formation of the ohmic contact without high temperature annealing after depositing the metal film.