Patents by Inventor Nichole Gerrish

Nichole Gerrish has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of Fabricating CMOS Inverter and Integrated Circuits Utilizing Strained Silicon Surface Channel MOSFETS
    Publication number: 20100022073
    Abstract: A method of fabricating a circuit comprising an nMOSFET includes providing a substrate, depositing a strain-inducing material comprising germanium over the substrate, and integrating a pMOSFET on the substrate, the pMOSFET comprising a strained channel having a surface roughness of less than 1 nm. The strain-inducing material is proximate to and in contact with the pMOSFET channel, the strain in the pMOSFET channel is induced by the strain-inducing material, and a source and a drain of the pMOSFET are at least partially formed in the strain-inducing material.
    Type: Application
    Filed: October 5, 2009
    Publication date: January 28, 2010
    Inventors: Eugene A. Fitzgerald, Nichole Gerrish