Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device, such as a varactor diode. The IC device includes a composite collector and heterostructure. A layer of wider band gap material is included as part of the collector at the collector/base interface. The presence of the wide band gap material may increase breakdown voltage and allow for increased hyperabrupt doping profiles in the narrower band gap portion of the collector. This may allow for increased tuning range and improved intermodulation (IMD) performance without the decreased breakdown performance associated with homojunction devices. Other embodiments may also be described and/or claimed.

Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device, such as a varactor diode. The IC device includes a composite collector and heterostructure. A layer of wider band gap material is included as part of the collector at the collector/base interface. The presence of the wide band gap material may increase breakdown voltage and allow for increased hyperabrupt doping profiles in the narrower band gap portion of the collector. This may allow for increased tuning range and improved intermodulation (IMD) performance without the decreased breakdown performance associated with homojunction devices. Other embodiments may also be described and/or claimed.