Patents by Inventor Nick Pfister

Nick Pfister has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MANUFACTURABLE GALLIUM AND NITROGEN CONTAINING SINGLE FREQUENCY LASER DIODE
    Publication number: 20220344476
    Abstract: A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate.
    Type: Application
    Filed: June 27, 2022
    Publication date: October 27, 2022
    Applicant: KYOCERA SLD Laser, Inc.
    Inventors: Philip Chan, Phillip Skahan, Nick Pfister, Christian Zollner, James W. Raring
  • Laser diodes with scribe structures
    Patent number: 9142935
    Abstract: A method and device for emitting electromagnetic radiation using semipolar or nonpolar gallium containing substrates is described where the backside of the substrate includes multiple scribes that reduce stray light leaking.
    Type: Grant
    Filed: April 29, 2014
    Date of Patent: September 22, 2015
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Nick Pfister, Yu-Chia Chang, Mathew C. Schmidt, Drew Felker
  • LASER DIODES WITH SCRIBE STRUCTURES
    Publication number: 20140315340
    Abstract: A method and device for emitting electromagnetic radiation using semipolar or nonpolar gallium containing substrates is described where the backside of the substrate includes multiple scribes that reduce stray light leaking.
    Type: Application
    Filed: April 29, 2014
    Publication date: October 23, 2014
    Applicant: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Nick Pfister, Yu-Chia Chang, Mathew C. Schmidt, Drew Felker
  • Laser diodes with scribe structures
    Patent number: 8750342
    Abstract: A method and device for emitting electromagnetic radiation using semipolar or nonpolar gallium containing substrates is described where the backside of the substrate includes multiple scribes that reduce stray light leaking.
    Type: Grant
    Filed: February 1, 2012
    Date of Patent: June 10, 2014
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Nick Pfister, Yu-Chia Chang, Matt Schmidt, Drew Felker
  • Self-aligned multi-dielectric-layer lift off process for laser diode stripes
    Patent number: 8728842
    Abstract: A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.
    Type: Grant
    Filed: March 20, 2012
    Date of Patent: May 20, 2014
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Daniel F. Feezell, Nick Pfister
  • Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
    Patent number: 8355418
    Abstract: An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.
    Type: Grant
    Filed: September 15, 2010
    Date of Patent: January 15, 2013
    Assignee: Soraa, Inc.
    Inventors: James W. Raring, Nick Pfister, Mathew Schmidt, Christiane Poblenz
  • Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates
    Patent number: 8351478
    Abstract: An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.
    Type: Grant
    Filed: September 17, 2010
    Date of Patent: January 8, 2013
    Assignee: Soraa, Inc.
    Inventors: James W. Raring, Nick Pfister, Mathew Schmidt, Christiane Poblenz
  • Self-Aligned Multi-Dielectric-Layer Lift Off Process for Laser Diode Stripes
    Publication number: 20120178198
    Abstract: A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.
    Type: Application
    Filed: March 20, 2012
    Publication date: July 12, 2012
    Applicant: SORAA, INC.
    Inventors: James W. Raring, Daniel F. Feezell, Nick Pfister
  • Self-aligned multi-dielectric-layer lift off process for laser diode stripes
    Patent number: 8143148
    Abstract: A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.
    Type: Grant
    Filed: July 14, 2009
    Date of Patent: March 27, 2012
    Assignee: Soraa, Inc.
    Inventors: James W. Raring, Daniel F. Feezell, Nick Pfister
  • Growth Structures and Method for Forming Laser Diodes on or Off Cut Gallium and Nitrogen Containing Substrates
    Publication number: 20110064100
    Abstract: An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.
    Type: Application
    Filed: September 15, 2010
    Publication date: March 17, 2011
    Applicant: Kaai, Inc.
    Inventors: James W. Raring, Nick Pfister, Mathew Schmidt, Christiane Poblenz
  • Growth Structures and Method for Forming Laser Diodes on or Off Cut Gallium and Nitrogen Containing Substrates
    Publication number: 20110064102
    Abstract: An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.
    Type: Application
    Filed: September 17, 2010
    Publication date: March 17, 2011
    Applicant: Kaai, Inc.
    Inventors: James W. Raring, Nick Pfister, Mathew Schmidt, Christiane Poblenz