Patents by Inventor Nick Sauer

Nick Sauer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabricating electronic-photonic devices having an active layer with spherical quantum dots
    Patent number: 8258497
    Abstract: A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature. Forming an active layer on the n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, the active layer including a plurality of spheroid-shaped quantum dots. Depositing a p-doped III-V composite semiconductor alloy capping layer on the active layer at a third temperature. The second temperature is less than the first temperature and the third temperature. The active layer has a photoluminescence intensity emission peak in the telecommunication C-band.
    Type: Grant
    Filed: October 18, 2010
    Date of Patent: September 4, 2012
    Assignee: Alcatel Lucent
    Inventors: Nick Sauer, Nils Weimann, Liming Zhang
  • FABRICATING ELECTRONIC-PHOTONIC DEVICES HAVING AN ACTIVE LAYER WITH SPHERICAL QUANTUM DOTS
    Publication number: 20110032964
    Abstract: A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature. Forming an active layer on the n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, the active layer including a plurality of spheroid-shaped quantum dots. Depositing a p-doped III-V composite semiconductor alloy capping layer on the active layer at a third temperature. The second temperature is less than the first temperature and the third temperature. The active layer has a photoluminescence intensity emission peak in the telecommunication C-band.
    Type: Application
    Filed: October 18, 2010
    Publication date: February 10, 2011
    Applicant: Alcatel-Lucent USA, Incorporated
    Inventors: Nick Sauer, Nils Weimann, Liming Zhang
  • Fabricating electronic-photonic devices having an active layer with spherical quantum dots
    Patent number: 7842595
    Abstract: A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature. Forming an active layer on the n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, the active layer including a plurality of spheroid-shaped quantum dots. Depositing a p-doped III-V composite semiconductor alloy capping layer on the active layer at a third temperature. The second temperature is less than the first temperature and the third temperature. The active layer has a photoluminescence intensity emission peak in the telecommunication C-band.
    Type: Grant
    Filed: March 4, 2009
    Date of Patent: November 30, 2010
    Assignee: Alcatel-Lucent USA Inc.
    Inventors: Nick Sauer, Nils Weimann, Liming Zhang
  • FABRICATING ELECTRONIC-PHOTONIC DEVICES HAVING AN ACTIVE LAYER WITH SPHERICAL QUANTUM DOTS
    Publication number: 20100226400
    Abstract: A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature. Forming an active layer on the n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, the active layer including a plurality of spheroid-shaped quantum dots. Depositing a p-doped III-V composite semiconductor alloy capping layer on the active layer at a third temperature. The second temperature is less than the first temperature and the third temperature. The active layer has a photoluminescence intensity emission peak in the telecommunication C-band.
    Type: Application
    Filed: March 4, 2009
    Publication date: September 9, 2010
    Applicant: Alcatel-Lucent USA, Incorporated
    Inventors: Nick Sauer, Nils Weimann, Liming Zhang