Abstract: Methods, systems, and devices related to determining whether a target address of a memory array associated with an access request is stored in a CAM. If the target address is stored in the CAM, the CAM may be updated to increment an access count of a target row corresponding to the target address. If the target row exceeds a first threshold value, rows of the memory array directly adjacent to the target row may be refreshed. If the target address is not stored in the CAM, the target address may be written to the CAM. The CAM may be updated to increment an access count of an address of a bank including the target row corresponding to the target address.

Abstract: Methods, systems, and devices for cache architectures for memory devices are described. For example, a memory device may include a main array having a first set of memory cells, a cache having a second set of memory cells, and a cache delay register configured to store an indication of cache addresses associated with recently performed access operations. In some examples, the cache delay register may be operated as a first-in-first-out (FIFO) register of cache addresses, where a cache address associated with a performed access operation may be added to the beginning of the FIFO register, and a cache address at the end of the FIFO register may be purged. Information associated with access operations on the main array may be maintained in the cache, and accessed directly (e.g., without another accessing of the main array), at least as long as the cache address is present in the cache delay register.

Abstract: Methods, systems, and devices for cleaning memory blocks using multiple types of write operations are described. A counter may be incremented each time a write command is received. In response to the counter reaching a threshold, the counter may be reset and a flag may be set. Each time a cleaning of a memory block is to take place, the flag may be checked. If the flag is set, the memory block may be cleaned using a second type of cleaning operation, such as one using a force write approach. Otherwise, the memory block may be cleaned using a first type of cleaning operation, such as one using a normal write approach. Once set, the flag may be reset after one or more memory blocks are cleaned using the second type of cleaning operation.

Abstract: Methods, systems, and devices for event management for memory devices are described. A memory system may include a frontend (FE) queue and a backend (BE). Each queue may include an interface that can be operated in an interrupt mode or a polling mode based on certain metrics. For example, the interface associated with the FE queue may be operated in a polling mode or an interrupt mode based on whether a quantity of commands being executed on one or more memory devices of the memory system satisfies a threshold value. Additionally or alternatively, the interface associated with the BE queue may be operated in a polling mode or an interrupt mode based on whether a quantity of active logical block addresses (LBAs) associated with one or more operations being executed on one or more memory devices of the memory system satisfies a threshold value.

Abstract: Methods, systems, and devices for low latency storage based on data size are described. A memory system may include logic, a processor, a first memory, and a second memory. The logic may be configured to receive commands, or data, or both, from a host system. The first memory and the second memory may be coupled with the processor. The processor may be configured to store, or to cause the storage of, data for commands associated with data that are smaller than a threshold in the first memory and to store data for commands associated with data that are larger than the threshold in the second memory. A first communication path between the logic and the first memory may be associated with a faster transfer speed than a second communication path between the logic and the second memory.

Abstract: Methods, systems, and devices for cache architectures for memory devices are described. For example, a memory device may include a main array having a first set of memory cells, a cache having a second set of memory cells, and a cache delay register configured to store an indication of cache addresses associated with recently performed access operations. In some examples, the cache delay register may be operated as a first-in-first-out (FIFO) register of cache addresses, where a cache address associated with a performed access operation may be added to the beginning of the FIFO register, and a cache address at the end of the FIFO register may be purged. Information associated with access operations on the main array may be maintained in the cache, and accessed directly (e.g., without another accessing of the main array), at least as long as the cache address is present in the cache delay register.

Abstract: Systems, apparatuses, and methods related to a controller for managing metrics and telemetry are described. A controller includes a front end portion, a central controller portion, a back end portion, and a management unit. The central controller portion can include a cache to store data associated with the performance of the memory operations, metric logic configured to collect metrics related to performance of the memory operations, load telemetry logic configured to collect load telemetry associated with performance of the memory operations within a threshold time, and a storage area to store the collected metrics and the collected load telemetry. The management unit memory of the controller can store metrics and load telemetry associatAND ed with monitoring the characteristics of the memory controller, and based on the stored metrics and load telemetry, alter at least one characteristic of the computing system.

Abstract: Methods, systems, and devices for cleaning memory blocks using multiple types of write operations are described. A counter may be incremented each time a write command is received. In response to the counter reaching a threshold, the counter may be reset and a flag may be set. Each time a cleaning of a memory block is to take place, the flag may be checked. If the flag is set, the memory block may be cleaned using a second type of cleaning operation, such as one using a force write approach. Otherwise, the memory block may be cleaned using a first type of cleaning operation, such as one using a normal write approach. Once set, the flag may be reset after one or more memory blocks are cleaned using the second type of cleaning operation.

Abstract: Methods, systems, and devices for event management for memory devices are described. A memory system may include a frontend (FE) queue and a backend (BE). Each queue may include an interface that can be operated in an interrupt mode or a polling mode based on certain metrics. For example, the interface associated with the FE queue may be operated in a polling mode or an interrupt mode based on whether a quantity of commands being executed on one or more memory devices of the memory system satisfies a threshold value. Additionally or alternatively, the interface associated with the BE queue may be operated in a polling mode or an interrupt mode based on whether a quantity of active logical block addresses (LBAs) associated with one or more operations being executed on one or more memory devices of the memory system satisfies a threshold value.

Abstract: Methods, systems, and devices for cleaning memory blocks using multiple types of write operations are described. A counter may be incremented each time a write command is received. In response to the counter reaching a threshold, the counter may be reset and a flag may be set. Each time a cleaning of a memory block is to take place, the flag may be checked. If the flag is set, the memory block may be cleaned using a second type of cleaning operation, such as one using a force write approach. Otherwise, the memory block may be cleaned using a first type of cleaning operation, such as one using a normal write approach. Once set, the flag may be reset after one or more memory blocks are cleaned using the second type of cleaning operation.

Abstract: Methods, systems, and devices for managed memory systems with multiple priority queues are described. Memory access commands may be received from a host and stored in a command queue. First and second subsets of the commands, respectively associated with first and second priorities, may be determined. The first and second subsets may be routed from the command queue to first and second queues, respectively. The first and second subsets may be processed from the first and second queues to third and fourth queues, respectively, at a storage controller, according to first and second processes that may be run concurrently according to parameters for prioritization between the first and second priorities. Data associated with the commands may be received from the host, temporarily stored in a buffer, then moved to a storage memory (for write commands) or retrieved from the storage memory, temporarily stored in the buffer, then transmitted to the host (for read commands).

Abstract: Methods, systems, and devices for adaptive buffer partitioning are described. A memory system may include a buffer for storing data (e.g., associated with a read command or a write command received from a host system). For example, the buffer may buffer data associated with a write command prior to storing the data at a memory device of the memory system. In another example, the buffer may buffer data associated with a read command prior to transmitting the data to the host system. In some cases, the buffer may include a first portion configured to store data associated with one or more read commands, a second portion configured to store data associated with one or more write commands, and a third portion configured to store data associated with one or more read commands or one or more write commands.

Abstract: Methods, systems, and devices for cache architectures for memory devices are described. For example, a memory device may include a main array having a first set of memory cells, a cache having a second set of memory cells, and a cache delay register configured to store an indication of cache addresses associated with recently performed access operations. In some examples, the cache delay register may be operated as a first-in-first-out (FIFO) register of cache addresses, where a cache address associated with a performed access operation may be added to the beginning of the FIFO register, and a cache address at the end of the FIFO register may be purged. Information associated with access operations on the main array may be maintained in the cache, and accessed directly (e.g., without another accessing of the main array), at least as long as the cache address is present in the cache delay register.

Abstract: The circuit distributes a test signal applied to a pad of an electronic device that is enabled during test phases of the device and disabled during normal functioning. The circuit includes a “master” buffer, one or more “slave” buffers, one for each replicated pad, and an interconnection bus of the “master” and “slave” buffers. During a test phase, the “master” buffer replicates on the interconnection bus the test signal fed to a pad of the device, while the “slave” buffers convey to the various replica pads of the feed pad the signal present on the interconnection bus. During the normal operation of the device, the circuit remains disabled.

Abstract: A voltage regulator connected to a memory cell is configured by identifying at least a first and a second operation regions of the cell and associating the first and second operation regions with respective first and second operation conditions of the memory cell. An operative condition of the memory cell involved in a programming operation is detected, and at least a configuration signal of the regulator according to said detected operative condition is generated, this configuration signal taking a first and a second value associated with the first and second operation conditions.

Abstract: A memory device may include an array of addressable three-level cells, a coding circuit being input with three-bit strings and generating corresponding ternary strings based upon a code, and a program circuit being input with the ternary strings and storing them in respective pairs of three-level cells. The memory device also may include a read circuit reading stored ternary strings in the respective pairs of three-level cells, and a decoding circuit being input with the stored ternary strings and generating corresponding strings of three bits based upon the code.

Abstract: A reading circuit for reading semiconductor memory cells, adapted to be coupled to at least one memory cell and to at least one reference cell through a respective bit line, the reading circuit including: a pre-charge circuit for pre-charging the bit lines to a predefined voltage during a pre-charge phase of a reading operation on the memory cell; a biasing circuit for applying a bias to a respective control terminal of the memory cell and of the reference cell in response to an enabling signal; and for each bit line, an evaluation circuit for evaluating an electric quantity developing on the bit line as a consequence of the bias during an evaluation phase of the reading operation on the memory cell, an information content of the memory cell being determined on the basis of the electric quantity that develops on the bit lines. The enabling signal is provided by the pre-charge circuit in response to an indication that the bit lines have reached the predefined voltage.

Abstract: A regulator for a digital-to-analog converter having in input a digital signal and suitable for providing an analog signal in output, the regulator including at least one pair of buffers having in input the digital signal and the outputs connected to a pair of circuit branches connected to the output of the regulator; each of the at least two circuit branches having at least one resistance. To at least one of the at least one pair of buffers a variable resistance is associated, and the regulator includes a circuit having in input the analog signal and adapted for measuring its waveform and acting on the variable resistance in response to its possible anomalous waveform compared to a desired waveform.

Abstract: A voltage regulator connected to a memory cell is configured by identifying at least a first and a second operation regions of the cell and associating the first and second operation regions with respective first and second operation conditions of the memory cell. An operative condition of the memory cell involved in a programming operation is detected, and at least a configuration signal of the regulator according to said detected operative condition is generated, this configuration signal taking a first and a second value associated with the first and second operation conditions.

Abstract: A memory device may include an array of addressable three-level cells, a coding circuit being input with three-bit strings and generating corresponding ternary strings based upon a code, and a program circuit being input with the ternary strings and storing them in respective pairs of three-level cells. The memory device also may include a read circuit reading stored ternary strings in the respective pairs of three-level cells, and a decoding circuit being input with the stored ternary strings and generating corresponding strings of three bits based upon the code.