Abstract: A signal processing device is usable in a communication system and includes a signal path, a signal detector, a signal synthesizer, a transmission unit, and a receive path including an analog-to-digital converter. The signal path transmits a transmission signal that was transmitted by the communication system and that contains a communication signal. The signal detector detects, and generates an activation signal in response to, an interference signal contained in the transmission signal and occurring due to narrowband interferences. The signal synthesizer generates an approximation signal for the interference signal upon the presence of the activation signal. The transmission unit receives the transmission signal transmitted by the signal path and the approximation signal, and outputs a difference signal between the transmission signal and the approximation signal. The analog-to-digital converter converts a signal generated based on the difference signal into a digital signal.

Abstract: The invention relates to a galvanic cell (2) comprising a housing (4) which is equipped with at least one cell coil or a cell stack and comprising a sensor (16) for detecting the pressure of the galvanic cell (2). The housing (4) has a recess which is formed from a through-opening between an interior and an exterior of the cell (2), and the sensor (16) is arranged outside of the cell (2) so as to be secured directly or indirectly to the cell. The sensor (16), in particular a micro electromechanical system, is in contact with the interior of the galvanic cell (2) via the recess. The invention additionally relates to a method for producing such a galvanic cell (2).

Abstract: At least one semiconductor component is packaged by covering at least one partial surface of the at least one semiconductor component with at least one chemically or physically dissoluble sacrificial material; surrounding the at least one semiconductor component at least partially with a photoablatable packaging material; exposing the sacrificial material on the at least one partial surface of the at least one semiconductor component at least partially by forming at least one trench through at least the packaging material using a light beam; and exposing the at least one partial surface of the at least one semiconductor component at least partially by at least partially removing the previously exposed sacrificial material using a chemical or physical removal method to which the packaging material has a higher resistance than the sacrificial material.

Abstract: A signal processing device is usable in a communication system and includes a signal path, a signal detector, a signal synthesizer, a transmission unit, and a receive path including an analog-to-digital converter. The signal path transmits a transmission signal that was transmitted by the communication system and that contains a communication signal. The signal detector detects, and generates an activation signal in response to, an interference signal contained in the transmission signal and occurring due to narrowband interferences. The signal synthesizer generates an approximation signal for the interference signal upon the presence of the activation signal. The transmission unit receives the transmission signal transmitted by the signal path and the approximation signal, and outputs a difference signal between the transmission signal and the approximation signal. The analog-to-digital converter converts a signal generated based on the difference signal into a digital signal.

Abstract: The invention concerns an electrode assembly (10) for a battery cell (2), comprising an anode (11) and a cathode (12) that are separated from one another by means of a separator (18), an electrically conductive layer (32) being arranged on the separator (18) and the electrically conductive layer (32) being covered at least partially with a protective film (34). The protective film (34) is a dense passivation layer or a polymer coating. The invention also concerns a battery cell (2), comprising at least one electrode assembly (10).

Abstract: At least one semiconductor component is packaged by covering at least one partial surface of the at least one semiconductor component with at least one chemically or physically dissoluble sacrificial material; surrounding the at least one semiconductor component at least partially with a photoablatable packaging material; exposing the sacrificial material on the at least one partial surface of the at least one semiconductor component at least partially by forming at least one trench through at least the packaging material using a light beam; and exposing the at least one partial surface of the at least one semiconductor component at least partially by at least partially removing the previously exposed sacrificial material using a chemical or physical removal method to which the packaging material has a higher resistance than the sacrificial material.

Abstract: The invention relates to a galvanic cell (2) comprising a housing (4) which is equipped with at least one cell coil or a cell stack and comprising a sensor (16) for detecting the pressure of the galvanic cell (2). The housing (4) has a recess which is formed from a through-opening between an interior and an exterior of the cell (2), and the sensor (16) is arranged outside of the cell (2) so as to be secured directly or indirectly to the cell. The sensor (16), in particular a micro electromechanical system, is in contact with the interior of the galvanic cell (2) via the recess. The invention additionally relates to a method for producing such a galvanic cell (2).

Abstract: A method for producing a metal structure on a surface of a semiconductor substrate, including the following steps: A applying a metal layer, B applying a structuring layer and C removing the structuring layer. Either step B is carried out after step A, and step C after step B in a masking method, so that the structuring layer covers the metal layer at least partially and, after step B is carried out, the metal layer is removed from the regions not covered by the structuring layer, before step C is carried out or, in a lift-off method, step A is carried out after step B, and step C after step A, so that the structuring layer is covered essentially by the metal layer and, at least in the regions, in which the metal layer covers the structuring layer, the metal layer is detached when step C is carried out. It is essential that the structuring layer in step B is produced by a hot melt ink.

Abstract: A solar cell, in particular for connecting to a solar cell module, including at least one metallic base contact, at least one metallic emitter contact (5) and a semi-conductor structure having at least one base area and at least one emitter area (3). The base area and emitter area (2,3) are at least partially adjacent to each other forming a pn-junction, the base contact (6) being connected in an electrically conductive manner to the base area (2), the emitter contact (5) being connected in an electrically conductive manner to the emitter area (3), and the solar cells being arranged on the contact side (1) as a base and emitter contact (6,5). Essentially, the solar cell includes several metallic emitter contacts which are connected in an electrically conductive manner to the emitter area (3) and several metallic base contacts which are connected in an electrically conductive manner to the base area (2).