Abstract: The present invention generally relates to a radiation detector element wherein a photodiode is transversely fixed to a detector element substrate through at least one connection comprising two fused solder balls, wherein a first of the two fused solder balls contacts the photodiode and a second of the two fused solder balls (contacts the detector element substrate. The invention further relates to a method of transversally attaching two substrates, in particular constructing the above-mentioned radiation detector element. It also relates to an imaging system comprising at least one radiation detector element.

Abstract: A scintillator pack (2) and a CT X-ray detector array (1) comprising such scintillator pack (2) are proposed. The scintillator pack (2) comprises an array of scintillator pixels (3). At a bottom surface (31) of each scintillator pixel (3), an X-ray absorbing encapsulation (13) is provided. This encapsulation (13) comprises an electrically insulating highly X-ray absorbing material having an atomic number greater than 60 such as, for example, Bismuth oxide (Bi2O3). The X-ray absorbing encapsulation (13) is interposed between the scintillator pixels (3) and an electronic circuit (19). The electronic circuit (19) may be provided as an ASIC in CMOS technology and may therefore be sensitive to X-ray induced damage. The encapsulation (13) provides for good X-ray protection of such electronic circuit (19).

Abstract: A detector tile and a detector panel arrangement for providing a seamless detector surface with a continuous pixel array and with a reduced gap appearance includes a detector tile having a flat primary substrate and a surface layer with a circuitry arrangement. The surface layer is arranged on a front side of the primary substrate covering the primary substrate. The circuitry arrangement includes detector pixels providing a pixel array, where a connection opening is provided in the surface layer and the flat primary substrate at least at one edge of the detector tile. The connection opening is leading from the surface layer to the rear of the substrate for guiding electrical connection elements between the front side and a rear of the detector tiles. The connection openings on opposing edges of the detector tile alternate, and the connection openings on adjacent edges of detector tiles alternate.

Abstract: The present invention generally relates to a radiation detector element wherein a photodiode is transversely fixed to a detector element substrate through at least one connection comprising two fused solder balls, wherein a first of the two fused solder balls contacts the photodiode and a second of the two fused solder balls (contacts the detector element substrate. The invention further relates to a method of transversally attaching two substrates, in particular constructing the above-mentioned radiation detector element. It also relates to an imaging system comprising at least one radiation detector element.

Abstract: The solder composition comprises particles of a thermodynamically metastable alloy. One of the elements of the alloy will form an intermetallic compound with a metal surface. The solder composition is particularly suitable for use in bumping of semiconductor devices.

Abstract: A thermal flow sensor integrated circuit for sensing flow in a channel based on temperature measurements, the integrated circuit having a temperature sensing element (30) on a front side of the integrated circuit arranged to face the channel, and a bond pad (60, 200) coupled electrically to the temperature sensing element, for making electrical contact off the integrated circuit, the bond pad being arranged to face away from the channel. By having the bond pad facing away from the channel, the space needed for the bond pad and any connections to it need not extend beyond the temperature sensing element and get in the way of the channel. Hence the temperature sensing element can be located closer to the channel or in the channel to enable measurements with better response time and sensitivity.

Abstract: An imaging system (100) includes a radiation sensitive detector array (110). The detector array includes at least two scintillator array layers (116). The detector array further includes at least two corresponding photosensor array layers (114). At least one of the at least two photosensor array layers is located between the at least two scintillator array layers in a direction of incoming radiation. The at least one of the at least two photosensor array layers has a thickness that is less than thirty microns.

Abstract: A scintillator pack (2) and a CT X-ray detector array (1) comprising such scintillator pack (2) are proposed. The scintillator pack (2) comprises an array of scintillator pixels (3). At a bottom surface (31) of each scintillator pixel (3), an X-ray absorbing encapsulation (13) is provided. This encapsulation (13) comprises an electrically insulating highly X-ray absorbing material having an atomic number greater than 60 such as, for example, Bismuth oxide (Bi2O3). The X-ray absorbing encapsulation (13) is interposed between the scintillator pixels (3) and an electronic circuit (19). The electronic circuit (19) may be provided as an ASIC in CMOS technology and may therefore be sensitive to X-ray induced damage. The encapsulation (13) provides for good X-ray protection of such electronic circuit (19).

Abstract: The present invention relates to a detector tile, a detector panel arrangement, an X-ray detector, an X-ray imaging system, and a method for providing a detector tile for a seamless detector surface with a continuous pixel array. In order to build a large area detector with reduced gap appearance, a detector tile (30) is provided having a flat primary substrate (32) and a surface layer (34) with a circuitry arrangement (36). The surface layer is arranged on a front side (38) of the primary substrate covering the primary substrate. The circuitry arrangement comprises a number of detector pixels (40) providing a pixel array (42), wherein at least one connection opening (44) is provided in the surface layer and the flat primary substrate at least at one edge of the detector tile, which connection opening is leading from the surface layer to the rear of the substrate for guiding electrical connection elements between the front side and the rear of the detector tiles.

Abstract: An electrical contact for a detector, the electrical component, comprising a cadmium tellurium component, a first layer formed onto the cadmium tellurium component, wherein the first layer comprises indium and a contact agent being bonded directly or indirectly to the first layer to be in electrical contact with the first layer. The contact agent may be a stud bump or a conductive adhesive interconnect being bonded indirectly to the first layer via noble metal shielding layer.

Abstract: An integrated electronic-micro fluidic device an integrated electronic-micro fluidic device, comprising a semiconductor substrate on a first support, an electronic circuit on a first semiconductor-substrate side of the semiconductor substrate, and a signal interface structure to an external device. A micro fluidic structure is formed in the semiconductor substrate, and is configured to confine a fluid and to allow a flow of the fluid to and from the microfluidic structure only on a second semiconductor-substrate side that is opposite to the first semiconductor-substrate side and faces away from the first support.

Abstract: An imaging system (100) includes a radiation sensitive detector array (110). The detector array includes at least two scintillator array layers (116). The detector array further includes at least two corresponding photosensor array layers (114). At least one of the at least two photosensor array layers is located between the at least two scintillator array layers in a direction of incoming radiation. The at least one of the at least two photosensor array layers has a thickness that is less than thirty microns.

Abstract: The present invention relates to an integrated electronic-microfluidic device an integrated electronic-microfluidic device, comprising a semiconductor substrate (106) on a first (122) support, an electronic circuit (102, 104) on a first semiconductor-substrate side of the semiconductor substrate, and a signal interface structure to an external device. The signal interface structure is arranged on the first semiconductor-substrate side and configured to receive electrical signals from the electronic circuit. A microfluidic structure (126) is formed in the semiconductor substrate, and is configured to confine a fluid and to allow a flow of the fluid to and from the microfluidic structure only on a second semiconductor-substrate side that is opposite to the first semiconductor-substrate side and faces away form the first support. The electronic-microfluidic device forms a flexible platform for the formation of various System-in-Package applications.

Abstract: The invention relates to a radiation detector and a method for its production, wherein a series of converter plates (110) and interconnect layers (120), which extend into a border volume (BV) lateral of the converter plates (110), are stacked. By filling voids in the border volume (BV) with an underfill material and cutting through the border volume, a contact surface (CS) is generated in which electrical leads (123) of the interconnect layers (120) lie free. To allow a good contacting, said leads (123) are preferably provided with enlargements in the contact surface, for example by bonding wires (132) to them.

Abstract: An integrated electronic-micro fluidic device an integrated electronic-micro fluidic device, comprising a semiconductor substrate on a first support, an electronic circuit on a first semiconductor-substrate side of the semiconductor substrate, and a signal interface structure to an external device. A micro fluidic structure is formed in the semiconductor substrate, and is configured to confine a fluid and to allow a flow of the fluid to and from the microfluidic structure only on a second semiconductor-substrate side that is opposite to the first semiconductor-substrate side and faces away from the first support.

Abstract: The solder composition comprises particles of a thermodynamically metastable alloy. One of the elements of the alloy will form an intermetallic compound with a metal surface. The solder composition is particularly suitable for use in bumping of semiconductor devices.

Abstract: A radiation-sensitive detector includes a first substrate 202 with first and second opposing sides. The first side detects incident radiation, and the first substrate 202 produces a signal indicative of the detected radiation. At least one electrical contact 204 is located on the first substrate 202. An electrically conductive material 214 is coupled to the at least one electrical contact 204. The electrically conductive material 214 has a melting point in a range of about seventy-two (72) degrees Celsius to about ninety-five (95) degrees Celsius.

Abstract: The solder composition comprises particles of a thermodynamically metastable alloy. One of the elements of the alloy will form an intermetallic compound with a metal surface. The solder composition is particularly suitable for use in bumping of semiconductor devices.

Abstract: An assembly (100) is provided comprising a first chip (20) and a second chip (30) which are interconnected through solder connections. These comprise, at the first chip, an underbump metallization and a solder bump, and, at the second chip, a metallization. In this case the solder bump is provided as a fluid layer with a contact angle of less than 90° C., and an intermetallic compound is formed on the basis of the metallization at the second chip, and at least one element of the composition is applied as the solder bump.

Abstract: A thermal flow sensor integrated circuit for sensing flow in a channel based on temperature measurements, the integrated circuit having a temperature sensing element (30) on a front side of the integrated circuit arranged to face the channel, and a bond pad (60, 200) coupled electrically to the temperature sensing element, for making electrical contact off the integrated circuit, the bond pad being arranged to face away from the channel. By having the bond pad facing away from the channel, the space needed for the bond pad and any connections to it need not extend beyond the temperature sensing element and get in the way of the channel. Hence the temperature sensing element can be located closer to the channel or in the channel to enable measurements with better response time and sensitivity.