Patents by Inventor Nicolae Chitica
Nicolae Chitica has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11927839Abstract: An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).Type: GrantFiled: September 14, 2020Date of Patent: March 12, 2024Assignee: II-VI Delaware, Inc.Inventors: Andrei Kaikkonen, David Adams, Robert Lewen, Nicolae Chitica
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Patent number: 11681166Abstract: A wideband electro-absorption modulating (EAM) device is configured to include a ground shield that functions to minimize the spread of an applied AC voltage beyond the limits of the modulator's electrode. The ground shield includes a grounding electrode disposed in a spaced-apart relationship with the modulator electrode along the ridge of the EAM structure, and a grounding termination used to couple the grounding electrode to a suitable ground location. The ground location may be either on-chip (such as the DC ground of the modulator itself) or off-chip (via an off-chip capacitor, with a wirebond connecting the grounding electrode to the capacitor). The use of a ground shield mitigates the effects that changes in the data rate have on effective length of the modulator as seen by the applied data signal.Type: GrantFiled: October 28, 2020Date of Patent: June 20, 2023Assignee: II-VI Delware, Inc.Inventors: David Adams, Andrei Kaikkonen, Nicolae Chitica
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Publication number: 20220128843Abstract: A wideband electro-absorption modulating (EAM) device is configured to include a ground shield that functions to minimize the spread of an applied AC voltage beyond the limits of the modulator's electrode. The ground shield includes a grounding electrode disposed in a spaced-apart relationship with the modulator electrode along the ridge of the EAM structure, and a grounding termination used to couple the grounding electrode to a suitable ground location. The ground location may be either on-chip (such as the DC ground of the modulator itself) or off-chip (via an off-chip capacitor, with a wirebond connecting the grounding electrode to the capacitor). The use of a ground shield mitigates the effects that changes in the data rate have on effective length of the modulator as seen by the applied data signal.Type: ApplicationFiled: October 28, 2020Publication date: April 28, 2022Applicant: II-VI Delaware, Inc.Inventors: David Adams, Andrei Kaikkonen, Nicolae Chitica
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Publication number: 20220082874Abstract: An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).Type: ApplicationFiled: September 14, 2020Publication date: March 17, 2022Applicant: II-VI Delaware, Inc.Inventors: Andrei Kaikkonen, David Adams, Robert Lewen, Nicolae Chitica
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Patent number: 11114819Abstract: A semiconductor laser chip-on-carrier (CoC) device comprising: a semiconductor laser component comprising an electric laser terminal; a driver circuit for producing on an electric driver terminal an alternating current electric driving signal; and an electric signal conductor electrically connecting the driver terminal to the laser terminal, wherein the electric signal conductor comprises: a first printed trace which is not arranged on the semiconductor laser component and which comprises a first trace elongated section and a first trace downstream terminal section; and a first wire bond, connecting the first trace downstream terminal section to the laser terminal, and wherein the first trace elongated section is adapted to the semiconductor laser component such that the first trace elongated section and an internal capacitance of the semiconductor is laser component together correspond to an impedance which is at the most 20% from an output impedance of an output terminal of the driver circuit.Type: GrantFiled: August 29, 2019Date of Patent: September 7, 2021Assignee: FINISAR SWEDEN ABInventors: Andrei Kaikkonen, Lukasz Kumanowski, Nicolae Chitica, David Adams
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Publication number: 20210098972Abstract: A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.Type: ApplicationFiled: August 11, 2020Publication date: April 1, 2021Inventors: Deepa Gazula, Nicolae Chitica, Marek Chacinski, Gary Landry, Jim Tatum
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Patent number: 10742000Abstract: A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.Type: GrantFiled: May 28, 2019Date of Patent: August 11, 2020Assignee: II-VI Delaware Inc.Inventors: Deepa Gazula, Nicolae Chitica, Marek Chacinski, Gary Landry, Jim Tatum
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Patent number: 10659166Abstract: An integrated optical transceiver, comprising a laser component, comprising an array of VCSEL diodes formed on a laser diode substrate; a laser driving component, comprising laser diode driving circuitry formed on a laser driving circuitry substrate; a photodiode component, comprising an array of photodiodes formed on a photodiode substrate; and a photodiode driving component, comprising photodiode driving circuitry formed on a photodiode driving circuitry substrate; a first heat sink comprising a connected piece of material to transport excess heat away from the integrated optical transceiver and connected to both the laser and photodiode driving components; and an electrically insulating material separating the photodiode substrate from the first heat sink and being air or dielectric material with a relative dielectric constant ?<10, wherein the electrically insulating material provides a gap having an effective electrical distance of at least 80 ?m between the photodiode substrate and the first heat sinType: GrantFiled: December 19, 2018Date of Patent: May 19, 2020Assignee: Finisar CorporationInventors: Nicolae Chitica, Jürgen Hauenschild, Theron Jones, David Nidelius, Lennart Lundqvist, Elisabeth Källén, Odd Steijer, Marek Chacinski, Åsa Johansson, Andrei Kaikkonen
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Publication number: 20200076157Abstract: A semiconductor laser chip-on-carrier (CoC) device comprising: a semiconductor laser component comprising an electric laser terminal; a driver circuit for producing on an electric driver terminal an alternating current electric driving signal; and an electric signal conductor electrically connecting the driver terminal to the laser terminal, wherein the electric signal conductor comprises: a first printed trace which is not arranged on the semiconductor laser component and which comprises a first trace elongated section and a first trace downstream terminal section; and a first wire bond, connecting the first trace downstream terminal section to the laser terminal, and wherein the first trace elongated section is adapted to the semiconductor laser component such that the first trace elongated section and an internal capacitance of the semiconductor is laser component together correspond to an impedance which is at the most 20% from an output impedance of an output terminal of the driver circuit.Type: ApplicationFiled: August 29, 2019Publication date: March 5, 2020Inventors: Andrei KAIKKONEN, Lukasz KUMANOWSKI, Nicolae CHITICA, David ADAMS
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Publication number: 20190341743Abstract: A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.Type: ApplicationFiled: May 28, 2019Publication date: November 7, 2019Inventors: Deepa Gazula, Nicolae Chitica, Marek Chacinski, Gary Landry, Jim Tatum
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Publication number: 20190190608Abstract: An integrated optical transceiver, comprising a laser component, comprising an array of VCSEL diodes formed on a laser diode substrate; a laser driving component, comprising laser diode driving circuitry formed on a laser driving circuitry substrate; a photodiode component, comprising an array of photodiodes formed on a photodiode substrate; and a photodiode driving component, comprising photodiode driving circuitry formed on a photodiode driving circuitry substrate; a first heat sink comprising a connected piece of material to transport excess heat away from the integrated optical transceiver and connected to both the laser and photodiode driving components; and an electrically insulating material separating the photodiode substrate from the first heat sink and being air or dielectric material with a relative dielectric constant ?<10, wherein the electrically insulating material provides a gap having an effective electrical distance of at least 80 ?m between the photodiode substrate and the first heat siType: ApplicationFiled: December 19, 2018Publication date: June 20, 2019Inventors: Nicolae CHITICA, Jürgen HAUENSCHILD, Theron JONES, David NIDELIUS, Lennart LUNDQVIST, Elisabeth KÄLLÉN, Odd STEIJER, Marek CHACINSKI, Åsa JOHANSSON, Andrei KAIKKONEN
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Patent number: 10305254Abstract: A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.Type: GrantFiled: September 18, 2017Date of Patent: May 28, 2019Assignee: Finisar CorporationInventors: Deepa Gazula, Nicolae Chitica, Marek Chacinski, Gary Landry, Jim Tatum
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Publication number: 20190089127Abstract: A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.Type: ApplicationFiled: September 18, 2017Publication date: March 21, 2019Inventors: Deepa Gazula, Nicolae Chitica, Marek Chacinski, Gary Landry, Jim Tatum