Abstract: A simple device for accurately measuring real-time air flows along a wall, and relating to a measuring device including an optical sensor configured to measure an illuminance distribution on a free surface of the optical sensor. A mobile member movably is mounted on the light sensor by partially covering its free surface, the mobile member being adapted to be freely directed by a local air flow pattern, thus, modulating the illuminance distribution on the free surface so as a current illuminance distribution measurement by the optical sensor indicates the current direction of the mobile member representing the current air flow pattern.

Abstract: A simple device for accurately measuring real-time air flows along a wall, and relating to a measuring device including an optical sensor configured to measure an illuminance distribution on a free surface of the optical sensor. A mobile member movably is mounted on the light sensor by partially covering its free surface, the mobile member being adapted to be freely directed by a local air flow pattern, thus, modulating the illuminance distribution on the free surface so as a current illuminance distribution measurement by the optical sensor indicates the current direction of the mobile member representing the current air flow pattern.

Abstract: A multilayer mirror includes a layer sequence arranged on a substrate and a plurality of layer pairs. Each layer pair includes a first layer composed of a first material and a second layer composed of a second material. The first layers and the second layers each have a thickness of more than 2 nm, and the first material or the second material is a silicon boride or a molybdenum nitride.

Abstract: In a multilayer mirror (1) for the reflection of EUV radiation containing a large number of alternating molybdenum layers (4) and silicon layers (3), a barrier layer (5) containing a silicon nitride or a silicon boride is included at a number of interfaces between the molybdenum layers (4) and the silicon layers (3). As a result of the barrier layers (5) of a silicon nitride or of a silicon boride, high thermal stability is achieved, in particular high long-term stability at temperatures of more than 300° C., whilst at the same time achieving high reflectivity in the multilayer mirror. A multilayer mirror (1) of this type can, in particular, be used as a heatable collector mirror for an EUV radiation source.

Abstract: A multilayer mirror includes a layer sequence arranged on a substrate and a plurality of layer pairs. Each layer pair includes a first layer composed of a first material and a second layer composed of a second material. The first layers and the second layers each have a thickness of more than 2 nm, and the first material or the second material is a silicon boride or a molybdenum nitride.

Abstract: In a multilayer mirror (1) for the reflection of EUV radiation containing a large number of alternating molybdenum layers (4) and silicon layers (3), a barrier layer (5) containing a silicon nitride or a silicon boride is included at a number of interfaces between the molybdenum layers (4) and the silicon layers (3). As a result of the barrier layers (5) of a silicon nitride or of a silicon boride, high thermal stability is achieved, in particular high long-term stability at temperatures of more than 300° C., whilst at the same time achieving high reflectivity in the multilayer mirror. A multilayer mirror (1) of this type can, in particular, be used as a heatable collector mirror for an EUV radiation source.