Abstract: The present disclosure concerns an electron microscopy method, including the emission of a precessing electron beam and the acquisition, at least partly simultaneous, of an electron diffraction pattern and of intensity values of X rays.

Abstract: Provided are embodiments for a semiconductor device. The semiconductor device includes a nanosheet stack comprising one or more layers, wherein the one or more layers are induced with strain from a modified sacrificial gate. The semiconductor device also includes one or more merged S/D regions formed on exposed portions of the nanosheet stack, wherein the one or more merged S/D regions fix the strain of the one or more layers, and a conductive gate formed over the nanosheet stack, wherein the conductive gate replaces a modified sacrificial gate without impacting the strain induced in the one or more layers. Also provided are embodiments for a method for creating stress in the channel of a nanosheet transistor.

Abstract: Provided are embodiments for a semiconductor device. The semiconductor device includes a nanosheet stack comprising one or more layers, wherein the one or more layers are induced with strain from a modified sacrificial gate. The semiconductor device also includes one or more merged S/D regions formed on exposed portions of the nanosheet stack, wherein the one or more merged S/D regions fix the strain of the one or more layers, and a conductive gate formed over the nanosheet stack, wherein the conductive gate replaces a modified sacrificial gate without impacting the strain induced in the one or more layers. Also provided are embodiments for a method for creating stress in the channel of a nanosheet transistor.

Abstract: Provided are embodiments for a semiconductor device. The semiconductor device includes a nanosheet stack comprising one or more layers, wherein the one or more layers are induced with strain from a modified sacrificial gate. The semiconductor device also includes one or more merged S/D regions formed on exposed portions of the nanosheet stack, wherein the one or more merged S/D regions fix the strain of the one or more layers, and a conductive gate formed over the nanosheet stack, wherein the conductive gate replaces a modified sacrificial gate without impacting the strain induced in the one or more layers. Also provided are embodiments for a method for creating stress in the channel of a nanosheet transistor.

Abstract: Provided are embodiments for a semiconductor device. The semiconductor device includes a nanosheet stack comprising one or more layers, wherein the one or more layers are induced with strain from a modified sacrificial gate. The semiconductor device also includes one or more merged S/D regions formed on exposed portions of the nanosheet stack, wherein the one or more merged S/D regions fix the strain of the one or more layers, and a conductive gate formed over the nanosheet stack, wherein the conductive gate replaces a modified sacrificial gate without impacting the strain induced in the one or more layers. Also provided are embodiments for a method for creating stress in the channel of a nanosheet transistor.

Abstract: The present disclosure concerns an electron microscopy method, including the emission of a precessing electron beam and the acquisition, at least partly simultaneous, of an electron diffraction pattern and of intensity values of X rays.

Abstract: In one aspect, the invention relates to a method of performing upsampling, that includes the steps of: receiving an input image; generating an initial upsampled image using the input image; generating a low-passed image using the input image; and performing self-similarity upsampling using the upsampled image and the low-passed image.

Abstract: Disclosed is a method of performing upscaling that includes the steps of: parsing an input video; breaking the input video into individual frames; performing upscaling on the individual frames to produce upscaled frames; and stitching the upscaled frames together to produce an upscaled video.

Abstract: A method of creating a bend in a construction component for use in a transportation vehicle. The method comprises providing a plurality of cuts in the construction component so as to create a region of increased flexibility in the construction component. The method further comprises bending the construction component in the region of increased flexibility so as to cause the construction component to acquire a bent shape, and then rigidifying the construction component in the region of increased flexibility so as to cause said construction component to maintain the acquired bent shape.

Abstract: A method of creating a bend in a construction component for use in a transportation vehicle. The method comprises providing a plurality of cuts in the construction component so as to create a region of increased flexibility in the construction component. The method further comprises bending the construction component in the region of increased flexibility so as to cause the construction component to acquire a bent shape, and then rigidifying the construction component in the region of increased flexibility so as to cause said construction component to maintain the acquired bent shape.

Abstract: An effective and convenient means exists for registering and correlating two or more microscopic images without imposing unusually stringent requirements of accuracy, precision and resolution on the microscope system. Particular utility is found in examining cervical cell samples.