Abstract: Microelectronic image sensor array device comprising a plurality of elementary cells laid out according to an array and each provided with at least one photosensitive zone for capturing photon(s) and converting photon(s) into electron(s), at least one or several of said cells comprising electronic avalanche multiplier means, provided to produce, during cycles known as electron amplification cycles, a greater number of electrons than the number of electrons converted by the photosensitive zone, the device further comprising a control circuit adapted to modulate the amplification gain of each cell individually.

Abstract: Microelectronic image sensor array device comprising a plurality of elementary cells laid out according to an array and each provided with at least one photosensitive zone for capturing photon(s) and converting photon(s) into electron(s), at least one or several of said cells comprising electronic avalanche multiplier means, provided to produce, during cycles known as electron amplification cycles, a greater number of electrons than the number of electrons converted by the photosensitive zone, the device further comprising a control circuit adapted to modulate the amplification gain of each cell individually.

Abstract: A phase of siliciding a transistor includes formation, from a first metal (8), of a first metal silicide (80) on the drain and source regions, while the gate region (30) is protected by a layer of hard mask (40), removal of the hard mask, formation, from a second metal (9), of a second metal silicide (90) on the gate region, while the first metal silicide (80) is protected by the second metal (9), and removal of the second metal (9).