Patents by Inventor Nicolas Cavassilas

Nicolas Cavassilas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanometric MOS Transistor With Maximized Ration Between On-State Current and Off-State Current
    Publication number: 20110079769
    Abstract: A MOS transistor having a gate length shorter than twice the de Broglie wavelength of the charge carriers in the channel material, wherein the cross-sectional area of the channel region is decreased in the vicinity of the drain region along at least one dimension to a value smaller than half said wavelength.
    Type: Application
    Filed: March 7, 2006
    Publication date: April 7, 2011
    Inventor: Nicolas Cavassilas