Patents by Inventor Nicolas D. Boscher

Nicolas D. Boscher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10155843
    Abstract: Described herein are facile, one-step initiated plasma enhanced chemical vapor deposition (iPECVD) methods of synthesizing hyper-thin (e.g., sub-100 nm) and flexible metal organic covalent network (MOCN) layers. As an example, the MOCN may be made from zinc tetraphenylporphyrin (ZnTPP) building units. When deposited on a membrane support, the MOCN layers demonstrate gas separation exceeding the upper bounds for multiple gas pairs while reducing the flux as compared to the support alone.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: December 18, 2018
    Assignees: Massachusetts Institute of Technology, Luxembourg Institute of Science and Technology
    Inventors: Karen K. Gleason, Minghui Wang, Nicolas D. Boscher, Patrick Choquet
  • Publication number: 20170158809
    Abstract: Described herein are facile, one-step initiated plasma enhanced chemical vapor deposition (iPECVD) methods of synthesizing hyper-thin (e.g., sub-100 nm) and flexible metal organic covalent network (MOCN) layers. As an example, the MOCN may be made from zinc tetraphenylporphyrin (ZnTPP) building units. When deposited on a membrane support, the MOCN layers demonstrate gas separation exceeding the upper bounds for multiple gas pairs while reducing the flux as compared to the support alone.
    Type: Application
    Filed: November 18, 2016
    Publication date: June 8, 2017
    Inventors: Karen K. Gleason, Minghui Wang, Nicolas D. Boscher, Patrick Choquet