Abstract: In a method for manufacturing an electrochemical gas sensor for sensing a target gas, a semi-manufactured gas sensor is provided. The semi-manufactured gas sensor comprises a substrate supporting an arrangement comprising a thin film of a thickness s?5 pm arranged between a sensing electrode configured to chemically interact with the target gas and a reference electrode facing the substrate. The thin film is an electronically non-conducting and ionically non-conducting ceramic or glass. The arrangement then is heated to an annealing temperature for irreversibly turning the thin film into an ionic conductor by incorporating mobile ions released from the sensing electrode in response to the heating.

Abstract: An infrared device comprises a substrate. A configuration for emitting infrared radiation is supported by the substrate. The configuration comprises an electrically conducting layer arrangement of less than 50 nm thickness between dielectric layers. In addition, a heater arranged for heating the configuration to emit the infrared radiation is supported by the substrate.

Abstract: An infrared device comprises a substrate. A configuration for emitting infrared radiation is supported by the substrate. The configuration comprises an electrically conducting layer arrangement of less than 50 nm thickness between dielectric layers. In addition, a heater arranged for heating the configuration to emit the infrared radiation is supported by the substrate.

Abstract: A method of transferring a layer from a donor substrate onto a receiving substrate comprises ionic implantation of at least one species into the donor substrate and forming a layer of concentration of the species intended to form microcavities or platelets; bonding the donor substrate with the receiving substrate by wafer bonding; and splitting at high temperature to split the layer in contact with the receiving substrate by cleavage, at a predetermined cleavage temperature, at the layer of microcavities or platelets formed in the donor substrate. The method further comprises, after the first implantation step and before the splitting step, ionic implantation of silicon ions into the donor substrate to form a layer of concentration of silicon ions in the donor substrate, the layer of concentration of silicon ions at least partially overlapping the layer of concentration of the species intended to form microcavities or platelets.

Abstract: A method of transferring a layer from a donor substrate onto a receiving substrate comprises ionic implantation of at least one species into the donor substrate and forming a layer of concentration of the species intended to form microcavities or platelets; bonding the donor substrate with the receiving substrate by wafer bonding; and splitting at high temperature to split the layer in contact with the receiving substrate by cleavage, at a predetermined cleavage temperature, at the layer of microcavities or platelets formed in the donor substrate. The method further comprises, after the first implantation step and before the splitting step, ionic implantation of silicon ions into the donor substrate to form a layer of concentration of silicon ions in the donor substrate, the layer of concentration of silicon ions at least partially overlapping the layer of concentration of the species intended to form microcavities or platelets.