Patents by Inventor Nicolas Hotellier
Nicolas Hotellier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240079440Abstract: A multispectral sensing device includes a first die, including silicon, which is patterned to define a first array of sensor elements, which output first electrical signals in response to optical radiation that is incident on the device in a band of wavelengths less than 1000 nm that is incident on the front side of the first die. A second die has its first side bonded to the back side of the first die and includes a photosensitive material and is patterned to define a second array of sensor elements, which output second electrical signals in response to the optical radiation that is incident on the device in a second band of wavelengths greater than 1000 nm that passes through the first die and is incident on the first side of the second die. Readout circuitry reads the first electrical signals and the second electrical signals serially out of the device.Type: ApplicationFiled: September 6, 2022Publication date: March 7, 2024Inventors: Oray O. Cellek, Fei Tan, Gershon Rosenblum, Hong Wei Lee, Cheng-Ying Tsai, Jae Y. Park, Christophe Verove, John L Orlowski, Siddharth Joshi, Xiangli Li, David Coulon, Xiaofeng Fan, Keith Lyon, Nicolas Hotellier, Arnaud Laflaquière
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Publication number: 20230085957Abstract: An optoelectronic device includes a base chip, including a silicon die having a photodiode disposed at its front surface and a first anode contact and a first cathode contact disposed on the front surface. A laser diode driver circuit on the silicon die supplies an electrical drive signal between the first anode contact and the first cathode contact. An emitter chip includes a III-V semiconductor die, which is mounted with its front side facing toward the front surface of the silicon die. A second anode contact and a second cathode contact are disposed on the front side of the III-V semiconductor die in electrical communication with the first anode contact and the first cathode contact. A VCSEL is disposed on the front side of the III-V semiconductor die in coaxial alignment with the photodiode and receives the drive signal from the second anode contact and the second cathode contact.Type: ApplicationFiled: July 18, 2022Publication date: March 23, 2023Inventors: Nicolas Hotellier, Arnaud Laflaquière, Christophe Verove, Fei Tan, Siddharth Joshi
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Publication number: 20220045020Abstract: A method for fabricating a semiconductor chip includes forming a plurality of conducting pads at a front face of a substrate, thinning a rear face of the substrate, etching openings under each conducting pad from the rear face, depositing a layer of a dielectric on walls and a bottom of the openings, forming a conducting material in the openings, and forming a conducting strip on the rear face. The conducting strip is electrically connected to the conducting material of each of the openings. The etching is stopped when the respective conducting pad is reached.Type: ApplicationFiled: October 21, 2021Publication date: February 10, 2022Inventors: Sebastien Petitdidier, Nicolas Hotellier, Raul Andres Bianchi, Alexis Farcy, Benoit Froment
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Patent number: 11183468Abstract: A semiconductor chip includes at least two insulated vias passing through the chip from the front face to the rear face in which, on the side of the rear face, the vias are connected to one and the same conducting strip and, on the side of the front face, each via is separated from a conducting pad by a layer of a dielectric.Type: GrantFiled: June 30, 2017Date of Patent: November 23, 2021Assignee: STMICROELECTRONICS (CROLLES 2) SASInventors: Sebastien Petitdidier, Nicolas Hotellier, Raul Andres Bianchi, Alexis Farcy, Benoît Froment
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Patent number: 10381394Abstract: An electronic component includes a semiconductor layer having a first surface coated with a first insulating layer and a second surface coated with an interconnection structure. A laterally insulated conductive pin extends through the semiconductor layer from a portion of conductive layer of the interconnection structure all the way to a contact pad arranged at the level of the first insulating layer.Type: GrantFiled: November 15, 2017Date of Patent: August 13, 2019Assignee: STMicroelectronics (Crolles 2) SASInventor: Nicolas Hotellier
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Publication number: 20180083060Abstract: An electronic component includes a semiconductor layer having a first surface coated with a first insulating layer and a second surface coated with an interconnection structure. A laterally insulated conductive pin extends through the semiconductor layer from a portion of conductive layer of the interconnection structure all the way to a contact pad arranged at the level of the first insulating layer.Type: ApplicationFiled: November 15, 2017Publication date: March 22, 2018Applicant: STMicroelectronics (Crolles 2) SASInventor: Nicolas Hotellier
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Publication number: 20180061781Abstract: A semiconductor chip includes at least two insulated vias passing through the chip from the front face to the rear face in which, on the side of the rear face, the vias are connected to one and the same conducting strip and, on the side of the front face, each via is separated from a conducting pad by a layer of a dielectric.Type: ApplicationFiled: June 30, 2017Publication date: March 1, 2018Inventors: Sebastien Petitdidier, Nicolas Hotellier, Raul Andres Bianchi, Alexis Farcy, Benoît Froment
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Patent number: 9847365Abstract: An electronic component includes a semiconductor layer having a first surface coated with a first insulating layer and a second surface coated with an interconnection structure. A laterally insulated conductive pin extends through the semiconductor layer from a portion of conductive layer of the interconnection structure all the way to a contact pad arranged at the level of the first insulating layer.Type: GrantFiled: December 4, 2015Date of Patent: December 19, 2017Assignee: STMicroelectronics (Crolles 2) SASInventor: Nicolas Hotellier
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Patent number: 9648724Abstract: An electronic device has a rear plate that includes a substrate rear layer, a substrate front layer and a dielectric intermediate layer between the substrate rear and front layers. An electronic structure is on the substrate front layer and includes electronic components and electrical connections. The substrate rear layer includes a solid local region and a hollowed-out local region. The hollowed-out local region extends over all of the substrate rear layer. The substrate rear layer does not cover at least one local zone of the dielectric intermediate layer corresponding to the hollowed-out local region.Type: GrantFiled: December 2, 2015Date of Patent: May 9, 2017Assignees: STMICROELECTRONICS (CROLLES 2) SAS, STMICROELECTRONICS SAInventors: Nicolas Hotellier, François Guyader, Vincent Fiori, Richard Fournel, Frédéric Gianesello
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Publication number: 20160372510Abstract: An electronic component includes a semiconductor layer having a first surface coated with a first insulating layer and a second surface coated with an interconnection structure. A laterally insulated conductive pin extends through the semiconductor layer from a portion of conductive layer of the interconnection structure all the way to a contact pad arranged at the level of the first insulating layer.Type: ApplicationFiled: December 4, 2015Publication date: December 22, 2016Applicant: STMicroelectronics (Crolles 2) SASInventor: Nicolas Hotellier
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Publication number: 20160366758Abstract: An electronic device has a rear plate that includes a substrate rear layer, a substrate front layer and a dielectric intermediate layer between the substrate rear and front layers. An electronic structure is on the substrate front layer and includes electronic components and electrical connections. The substrate rear layer includes a solid local region and a hollowed-out local region. The hollowed-out local region extends over all of the substrate rear layer. The substrate rear layer does not cover at least one local zone of the dielectric intermediate layer corresponding to the hollowed-out local region.Type: ApplicationFiled: December 2, 2015Publication date: December 15, 2016Inventors: Nicolas HOTELLIER, François GUYADER, Vincent FIORI, Richard FOURNEL, Frédéric GIANESELLO
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Patent number: 8704358Abstract: A method for forming an integrated circuit including the steps of: a) forming openings in a front surface of a first semiconductor wafer, the depth of the openings being smaller than 10 ?m, and filling them with a conductive material; b) forming doped areas of components in active areas of the front surface, forming interconnection levels on the front surface and leveling the surface supporting the interconnection levels; c) covering with an insulating layer a front surface of a second semiconductor wafer, and leveling the surface coated with an insulator; d) applying the front surface of the second wafer coated with insulator on the front surface of the first wafer supporting interconnection levels, to obtain a bonding between the two wafers; e) forming vias from the rear surface of the second wafer, to reach the interconnection levels of the first wafer; and f) thinning the first wafer to reach the openings filled with conductive material.Type: GrantFiled: November 28, 2012Date of Patent: April 22, 2014Assignee: STMicroelectronics S.A.Inventors: Pierre Bar, Sylvain Joblot, Nicolas Hotellier
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Patent number: 8138012Abstract: A microelectronic device includes a color filter equipped with a plurality of filtering elements, including several filtering elements. The device includes at least one first zone located inside a cavity and includes a first group of filtering elements having a first critical dimension, and at least one second zone at the periphery of the cavity, including a second group of filtering elements having a second critical dimension that is different from the first critical dimension.Type: GrantFiled: June 8, 2007Date of Patent: March 20, 2012Assignee: STMicroelectronics SAInventors: Nicolas Hotellier, Cyril Fellous, Christophe Cowache, Yannick Sanchez
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Publication number: 20120007201Abstract: A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least as a majority formed of silicon oxide and the block being formed of a polymer of the general formula R1R2R3SiOSiR1R2R3 where R1, R2, and R3 are any carbonaceous or metal substituents and where one of R1, R2, or R3 is a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.Type: ApplicationFiled: September 22, 2011Publication date: January 12, 2012Applicant: STMICROELECTRONICS S.A.Inventors: CYRIL FELLOUS, NICOLAS HOTELLIER, CHRISTOPHE AUMONT, FRANÇOIS ROY
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Patent number: 8053801Abstract: A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least as a majority formed of silicon oxide and the block being formed of a polymer of the general formula R1R2R3SiOSiR1R2R3 where R1, R2, and R3 are any carbonaceous or metal substituents and where one of R1, R2, or R3 is a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.Type: GrantFiled: February 12, 2010Date of Patent: November 8, 2011Assignee: STMicroelectronics SAInventors: Cyril Fellous, Nicolas Hotellier, Christophe Aumont, Francois Roy
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Publication number: 20100144388Abstract: A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least as a majority formed of silicon oxide and the block being formed of a polymer of the general formula R1R2R3SiOSiR1R2R3 where R1, R2, and R3 are any carbonaceous or metal substituents and where one of R1, R2, or R3 is a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.Type: ApplicationFiled: February 12, 2010Publication date: June 10, 2010Applicant: STMICROELECTRONICS S.A.Inventors: CYRIL FELLOUS, NICOLAS HOTELLIER, CHRISTOPHE AUMONT, FRANCOIS ROY
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Patent number: 7663160Abstract: A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least as a majority formed of silicon oxide and the block being formed of a polymer of the general formula R1R2R3SiOSiR1R2R3 where R1, R2, and R3 are any carbonaceous or metal substituents and where one of R1, R2, or R3 is a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.Type: GrantFiled: February 14, 2007Date of Patent: February 16, 2010Assignee: STMicroelectronics SAInventors: Cyril Fellous, Nicolas Hotellier, Christophe Aumont, François Roy
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Publication number: 20080150061Abstract: A system and method for producing optical microlenses on a front layer of a semiconductor device. The system and method includes depositing a final layer of a suitable material on a front layer of a semiconductor device. The system and method could also include producing crossed grooves in the final layer down to the front layer forming spaced-apart pads and then treating the pads so that the pads exhibit a substantially domed shape. In addition, an apparatus to produce optical microlenses could include a chamber to accommodate the semiconductor device and a heating element to heat the chamber. The apparatus could also include an ultraviolet radiation emitter associated with the chamber. The apparatus could further include a plasma generator configured to act on the front layer. Finally, a semiconductor device with optical microlenses which includes some sort of anti-fusion means between the microlenses is also provided.Type: ApplicationFiled: December 7, 2007Publication date: June 26, 2008Applicant: STMICROELECTRONICS SAInventors: Yannick Sanchez, Nicolas Hotellier, Alain Inard
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Publication number: 20070287217Abstract: A microelectronic device includes a color filter equipped with a plurality of filtering elements, including several filtering elements. The device includes at least one first zone located inside a cavity and includes a first group of filtering elements having a first critical dimension, and at least one second zone at the periphery of the cavity, including a second group of filtering elements having a second critical dimension that is different from the first critical dimension.Type: ApplicationFiled: June 8, 2007Publication date: December 13, 2007Applicant: STMicroelectronics SAInventors: Nicolas Hotellier, Cyril Fellous, Christophe Cowache, Yannick Sanchez
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Publication number: 20070187733Abstract: A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least as a majority formed of silicon oxide and the block being formed of a polymer of the general formula R1R2R3SiOSiR1R2R3 where R1, R2, and R3 are any carbonaceous or metal substituents and where one of R1, R2, or R3 is a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.Type: ApplicationFiled: February 14, 2007Publication date: August 16, 2007Inventors: Cyril Fellous, Nicolas Hotellier, Christophe Aumont, Francois Roy