Abstract: The electronic device comprises a network of at least one thin-film capacitor and at least one inductor on a first side of a substrate of a semiconductor material. The substrate has a resistivity sufficiently high to limit electrical losses of the inductor and being provided with an electrically insulating surface layer on its first side. A first and a second lateral pin diode are defined in the substrate, each of the pin diodes having a doped p-region, a doped n-region and an intermediate intrinsic region. The intrinsic region of the first pin diode is larger than that of the second pin diode.

Abstract: The electronic device (100) of the invention comprises a semiconductor device (30) and a low-pass filter (20), which are present in a stacked configuration, and which together include a phase locked loop. The low-pass filter is preferably embodied by vertical trench capacitors, and preferably comprises a drift compensation part. The device (100) can be suitably provided in an open loop architecture. In a preferred embodiment, the low-pass filter comprises a large capacitor (C2) and a small capacitor (C1) connected in parallel, the large capacitor (C2) being connected in series with a resistor (R1).

Abstract: The electronic device (10) of the invention has a first inductor (12) and a first capacitor (11). The capacitor (11) comprises a first capacitor electrode (21) in a first electrically conducting layer (3), a dielectric (26), and a second capacitor electrode (25) in a second electrically conducting layer (7). The second conductive layer (7) also comprises the first inductor (12) and a via (13). In order to get a resonance frequency with a low tolerance, which can be used at high frequencies in RF equipment, the second capacitor electrode (25) has a contour whose projection onto the first conductive layer (3) lies within the first capacitor electrode (21). In this way the decrease in capacitance of the first capacitor (11) due to etching can be leveled out against the increase in inductance of the first inductor (12) due to the same etching. Preferably, the dielectric (26) has a middle zone (24) and edge zones (22, 23). The dielectric consists of a layer of dielectric material (5) in the middle zone (24).