Abstract: A device, system and method for distributing and locally persisting provider objects is provided. A first device provides, in a provider object stream, first indications of first provider objects, generated and locally persisted in association with a first region, to a second device associated with a second region. The first device receives, in the stream, from the second device, second indications of second provider objects generated locally persisted in association with the second region, the second indications including respective identifiers identifying the second region. The first device: discards given second provider objects, indicated by the second indications, which do not meet a local persistence condition; and locally persists other second provider objects, as indicated by the second indications, which meet the local persistence condition, the other second provider objects locally persisted in association with the first region.

Abstract: A device, system and method for generating trained models to generate provider objects is provided. A computing device receives a set of associated provider objects, each provider object representing a respective group of one or more items provided to a client device for selection at successive times; successive provider objects, following a first provider object, comprising at least one item selected at the client device from one or more previous provider objects. The computing device generates from the set of associated provider objects, a trained model configured to generate one or more new provider objects. The computing device receives a provider object request from one or more client devices and, in response, generates, using the trained model, the one or more new provider objects, and provides, to the one or more client devices, one or more of the new provider objects.

Abstract: A method for repairing an end plate of a turbomachine rotor, the end plate including a crown having at least two collar fastening holes and at least one balancing-weight fastening hole located between the two collar fastening holes, each collar fastening hole being equipped with a crimped nut, the crown having a damaged portion between two collar fastening holes, the method including the steps of removing the two crimped nuts located on either side of the damage; removing the damaged crown portion, for example by machining; putting in place a strip in the form of a crown portion closing off the removed crown portion, the strip having at least one balancing-weight fastening hole and two mounting holes; fastening the strip to the crown with two crimped nuts, which penetrate the mounting holes, by crimping each nut in a collar fastening hole.

Abstract: Embodiments of the present disclosure provide techniques for fabricating a semiconductor device with fewer via voids (e.g., gaps between a dielectric layer and a metal fill of the semiconductor device). One such technique involves forming a dielectric layer over a surface of a substrate, forming one or more openings in the dielectric layer, filling the one or more openings with a metal wherein the metal is disposed on a surface of each of the one or more openings, and implanting an oxygen containing species into the dielectric layer to provide a dose of the oxygen containing species to the surface of each of the one or more openings and the metal disposed thereon.

Abstract: Embodiments of the present disclosure are provide a method for fabricating a semiconductor device with fewer via voids (e.g., gaps between a dielectric layer and a metal fill of the semiconductor device). One such technique involves forming a dielectric layer, wherein at least a portion of the dielectric layer comprises a nonstoichiometric compound; forming one or more openings in the dielectric layer; filling the one or more openings with a metal, wherein the metal is disposed on a surface of each of the one or more openings; and exposing the dielectric layer and metal disposed in the openings to an oxidizing atmosphere, wherein exposing the dielectric layer and metal in the openings causes oxidation of the nonstoichiometric compound.

Abstract: A method of forming an oxidation barrier layer in a semiconductor structure includes forming a contact layer on an exposed surface of a semiconductor region of a semiconductor structure in a first processing chamber, wherein the semiconductor region comprises silicon germanium doped with p-type dopants and the contact layer comprises silicon germanium (SiGe) with a ratio of germanium (Ge) ranging between 60% and 100%, and forming an oxidation barrier layer comprising gallium (Ga) on the contact layer, by applying gallium (Ga)-containing liquid precursor to a surface of the contact layer in the first processing chamber.

Abstract: A method of forming an electrical contact in a semiconductor structure includes performing a patterning process to form a mask on a semiconductor structure, the semiconductor structure comprising a first semiconductor region, a second semiconductor region, a dielectric layer having a first opening over the first semiconductor region and a second opening over the second semiconductor region, wherein the mask covers an exposed surface of the second semiconductor region within the second opening, performing an amorphization ion implant process to amorphize an exposed surface of the first semiconductor region within the first opening, performing a removal process to remove the mask, performing a selective epitaxial deposition process, to epitaxially form a contact layer on the exposed surface of the second semiconductor region, and performing a recrystallization anneal process to recrystallize the amorphized surface of the first semiconductor region.

Abstract: A method of forming an electrical contact in a semiconductor structure includes performing a patterning process to form a hard mask on a semiconductor structure comprising a first semiconductor region, a second semiconductor region, a dielectric layer having a first opening over the first semiconductor region and a second opening over the second semiconductor region, wherein the hard mask covers an exposed surface of the first semiconductor region within the first opening, performing a first selective deposition process to form a contact layer on the exposed surface of the second semiconductor region within the second opening, and performing a second selective deposition process to form a cap layer on the contact layer.

Abstract: A method of forming a contact layer in a semiconductor structure includes performing a pre-clean process on exposed surfaces of a plurality of first semiconductor regions and a plurality of second semiconductor regions formed on a substrate, wherein the exposed surfaces of the plurality of first and second semiconductor regions are each disposed within openings formed in a dielectric layer disposed over the substrate, performing a first selective epitaxial deposition process to form a first contact layer on the exposed surfaces of the first semiconductor regions and a second contact layer on the exposed surface of the second semiconductor regions, performing a patterning process to form a patterned stack, wherein the patterned stack comprises a patterned layer that comprises openings formed over the first contact layer disposed within each opening in the dielectric layer and a portion of the patterned layer that is disposed over each second contact layer disposed within each opening in the dielectric layer, a

Abstract: A container having a container body and a handle mounted thereto. The handle has a grip portion and a mounting bracket, a gripping area being left free between said grip portion and said mounting bracket for gripping the grip portion. An anchoring portion is arranged on a side of the mounting bracket facing away from the grip portion. The anchoring portion and the grip portion are elongate in a first, horizontal direction. The anchoring portion has a single wall stem portion oriented in a plane in said first direction and in a second direction away from the grip portion and a hooking portion projecting from the stem portion in a third direction transverse to said plane. A method for manufacturing such a container is also described.

Abstract: Exemplary methods of forming a semiconductor structure may include forming a layer of metal on a semiconductor substrate. The layer of metal may extend along a first surface of the semiconductor substrate. The semiconductor substrate may be or include silicon. The methods may include performing an anneal to produce a metal silicide. The methods may include implanting ions in the metal silicide to increase a barrier height over 0.65 V.

Abstract: A method of forming a contact trench structure in a semiconductor device, the method includes performing a first selective deposition process to form a contact on sidewalls of a trench, each of the sidewalls of the trench comprising a first cross section of a first material and a second cross section of a second material, performing a second selective deposition process to form a metal silicide layer on the contact, performing a first metal fill process to form a contact plug within the trench, the first metal fill process including depositing a contact plug metal material within the trench, performing an etch process to form an opening within the trench, comprising partially etching the contact plug metal material within the trench, and performing a second metal fill process, the second metal fill process comprising depositing the contact plug metal material within the opening.

Abstract: The present disclosure generally relates to dynamic random access memory (DRAM) devices and to semiconductor fabrication for DRAM devices. Certain embodiments disclosed herein provide an integrated processing system and methods for forming CMOS contact, DRAM array bit line contact (BLC), and storage node structures. The integrated processing system and methods enable deposition of contact and storage node layers with reduced contamination and improved quality, thus reducing leakage current and resistance for the final contact and storage node structures.

Abstract: A pour spout (1) has an elongate conduit portion (3) obliquely projecting from a coupling cap portion (4), which is arranged for coupling to a container (2). At least one sealing surface (6, 7, 8) of the coupling cap portion is arranged for sealing engagement around the opening of the container. A venting channel (18) interrupts the at least one sealing surface (6, 7, 8) for allowing venting of the container (2) through a passage between the coupling cap portion (4) and a portion of the container facing the venting channel. The venting channel (18) is provided on one single lateral side of the coupling cap portion (4) only. The lateral side where the venting channel (18) is provided is in a radial direction in which an angle between the longitudinal direction of the conduit portion (3) and the plane (19) is smallest.

Abstract: Exemplary semiconductor processing methods include forming a via in a semiconductor structure. The via may be defined in part by a bottom surface and a sidewall surface formed in the semiconductor structure around the via. The methods may also include depositing a tantalum nitride (TaN) layer on the bottom surface of the via. In embodiments, the TaN layer may be deposited at a temperature less than or about 200° C. The methods may still further include depositing a titanium nitride (TiN) layer on the TaN layer. In embodiments, the TiN layer may be deposited at a temperature greater than or about 300° C. The methods may additionally include depositing a fill-metal on the TiN layer in the via. In embodiments, the metal may be deposited at a temperature greater than or about 300° C.

Abstract: Exemplary methods of forming a memory structure may include forming a layer of a transition-metal-and-oxygen-containing material overlying a substrate. The substrate may include a first electrode material. The methods may include annealing the transition-metal-and-oxygen-containing material at a temperature greater than or about 500° C. The annealing may occur for a time period less than or about one second. The methods may also include, subsequent the annealing, forming a layer of a second electrode material over the transition-metal-and-oxygen-containing material.

Abstract: Exemplary methods of forming a semiconductor structure may include forming a layer of metal on a semiconductor substrate. The layer of metal may extend along a first surface of the semiconductor substrate. The semiconductor substrate may be or include silicon. The methods may include performing an anneal to produce a metal silicide. The methods may include implanting ions in the metal silicide to increase a barrier height over 0.65 V.

Abstract: A method and apparatus for delivering power to a hybrid vehicle is disclosed. The apparatus includes an apparatus for delivering power to a hybrid vehicle, the hybrid vehicle including a powertrain having a power take-off coupling, the powertrain including an engine and a transmission. The apparatus includes an electric motor operable to generate a torque, the motor being coupled to transmit a starting torque through the power take-off of the powertrain for starting the engine.

Abstract: A system is provided that includes a dispensing device configured to receive at least one cartridge that contains a cosmetic material and to dispense a specified amount of the cosmetic material from the cartridge into a receiving area, the at least one cartridge including an electronic communication and storage device configured to store data regarding the cosmetic material stored in the cartridge. The system includes a mobile user device configured to perform communication with the dispensing assembly to receive information related to the data stored on the electronic communication and storage device and to transmit a command to cause the dispensing assembly to dispense the specified amount of the cosmetic material.

Abstract: Exemplary methods of forming a memory structure may include forming a layer of a transition-metal-and-oxygen-containing material overlying a substrate. The substrate may include a first electrode material. The methods may include annealing the transition-metal-and-oxygen-containing material at a temperature greater than or about 500° C. The annealing may occur for a time period less than or about one second. The methods may also include, subsequent the annealing, forming a layer of a second electrode material over the transition-metal-and-oxygen-containing material.