Abstract: An optoelectronic device including a semiconductor layer formed from a central segment and at least two lateral segments forming tensioning arms that extend along a longitudinal axis A1. The semiconductor layer furthermore includes at least two lateral segments forming electrical biasing arms that extend along a transverse axis A2 orthogonal to the axis A1.

Abstract: The invention relates to an optoelectronic device comprising a semiconductor layer 10 formed from a central segment 20 and at least two lateral segments forming tensioning arms 30 that extend along a longitudinal axis A1. The semiconductor layer 10 furthermore comprises at least two lateral segments forming electrical biasing arms 40 that extend along a transverse axis A2 orthogonal to the axis A1.

Abstract: A source of collimated light, in particular a source of single photons. The source comprises a cavity in the shape of an inverted pyramid formed in a substrate. At least one quantum dot (Bq) suitable for emitting light with a wavefront is arranged at the apex of the inverted pyramid and a structure (4) having an index gradient fills the cavity. This structure has an effective index that decreases from the centre of the base towards the sides. Thus, the wavefront of the light emitted by the at least one quantum dot is flattened. The invention extends to the method for manufacturing such a source, and to its use for the emission of a sequence of single photons.

Abstract: Optical and/or electronic device comprising a suspended, germanium-based membrane (20) and comprising an active zone (21) placed under tension by tensioning arms (23), said device being characterized in that it comprises at least one tensioning arm (23) comprising nonparallel lateral sides (32), the width of which increases with distance from the active zone (21).

Abstract: Optical and/or electronic device comprising a suspended, germanium-based membrane (20) and comprising an active zone (21) placed under tension by tensioning arms (23), said device being characterized in that it comprises at least one tensioning arm (23) comprising nonparallel lateral sides (32), the width of which increases with distance from the active zone (21).

Abstract: The transistor (100) comprises a nanowire (101) at least partially forming a channel of the transistor (100), a source contact (102) arranged at a first longitudinal end (103) of the nanowire (101), a drain contact (104) arranged at a second longitudinal end (105) of the nanowire (101), and a gate (106) arranged on the nanowire (101) between the source contact (102) and the drain contact (104). Furthermore, a portion of the gate (106) covers, with the interposition of a dielectric material (107), a corresponding portion of the source contact (102) and/or of the drain contact (104) arranged along the nanowire (101) between its two longitudinal ends (103, 105).

Abstract: The invention relates to a process for the formation of pores of controlled shape, dimensions and distribution in a polymer matrix comprising a step of embedding silicon nanowires and/or nanotrees in a nonpolymerized polymer matrix or a nonpolymerized polymer matrix in suspension or in solution in at least one solvent, a step of curing the polymer matrix, and a step of removing the silicon nanowires and/or nanotrees by chemical treatment. The process of the invention can be used for the manufacture of a proton exchange membrane fuel cell active layer. The invention has applications in the field of manufacture of proton exchange membrane fuel cells, in particular.

Abstract: The invention relates to a process for the formation of pores of controlled shape, dimensions and distribution in a polymer matrix comprising a step of embedding silicon nanowires and/or nanotrees in a nonpolymerized polymer matrix or a nonpolymerized polymer matrix in suspension or in solution in at least one solvent, a step of curing the polymer matrix, and a step of removing the silicon nanowires and/or nanotrees by chemical treatment. The process of the invention can be used for the manufacture of a proton exchange membrane fuel cell active layer. The invention has applications in the field of manufacture of proton exchange membrane fuel cells, in particular.