Abstract: A method of making a semiconductor structure, the method including providing a silicon on insulator (SOI) substrate having a first epitaxial layer and a bulk silicon substrate separated by a buried oxide layer. The method further includes performing a local oxidation of silicon (LOCOS) process in a region of the SOI substrate to at least partially oxidize the first epitaxial silicon layer in the region, and locally etching the SOI substrate in the region to create a trench through the buried oxide layer and to the bulk silicon substrate. The method further includes forming a second epitaxial layer on the bulk silicon substrate in the trench, and forming one or more semiconductor devices in the first and second epitaxial layers.

Abstract: A method of forming gate sidewall spacers of two different widths, the method including providing a semiconductor substrate and providing a first and second gate structure on the semiconductor substrate. Each gate structure has at least one sidewall. The method includes blanket depositing, on said first and second gate structures, a first nitride layer and anisotropically etching the first nitride layer leaving at least some of said first nitride layer on at least one sidewall of each gate structure so as to form a first nitride sidewall spacer portion on each gate structure. The method further includes removing the first sidewall spacer portion from the first gate structure, blanket depositing, on said first and second gate structures, a second nitride layer, and anisotropically etching the second nitride layer leaving at least some of said second nitride layer on at least one sidewall of each gate structure so as to form a second nitride sidewall spacer portion on each gate structure.

Abstract: A transistor carried by a substrate comprising an active layer, the transistor comprising: at least one source area and at least one drain area; at least one electrical contact area; at least one conduction channel; at least one gate; wherein the gate comprises: a longitudinal portion; a transverse portion extending on either side of a portion of the active layer and comprising: at least a first portion extending beyond a portion of a first side of the portion of the active layer on a first extension dimension I2; at least a second portion extending beyond a portion of a second side of the portion of the active layer on a second extension dimension I3; and in that: I2>I3 with I3?0.

Abstract: A method of forming a transistor from a stack of layers comprising at least one insulating layer topped by at least one active layer and at least one first and one second insulating trench defining in the active layer a reception area for receiving the transistor, the transistor comprising a conduction channel formed at least partially in the active layer, the method comprising at least the following steps: forming a grid stack extending over at least the conduction channel; forming a source zone and a drain zone; wherein the formation of the grid stack is carried out in such a way as to provide at least a first and a second portion of the reception zone, not covered by the grid stack.

Abstract: A transistor carried by a substrate comprising an active layer, the transistor comprising: at least one source area and at least one drain area; at least one electrical contact area; at least one conduction channel; at least one gate; wherein the gate comprises: a longitudinal portion; a transverse portion extending on either side of a portion of the active layer and comprising: at least a first portion extending beyond a portion of a first side of the portion of the active layer on a first extension dimension I2; at least a second portion extending beyond a portion of a second side of the portion of the active layer on a second extension dimension I3; and in that: I2>I3 with I3?0.

Abstract: A method of forming a transistor from a stack of layers comprising at least one insulating layer topped by at least one active layer and at least one first and one second insulating trench defining in the active layer a reception area for receiving the transistor, the transistor comprising a conduction channel formed at least partially in the active layer, the method comprising at least the following steps: forming a grid stack extending over at least the conduction channel; forming a source zone and a drain zone; wherein the formation of the grid stack is carried out in such a way as to provide at least a first and a second portion of the reception zone, not covered by the grid stack.