Abstract: A light emitting diode (LED) pixel array and method of fabrication thereof. A semiconductor wafer template includes a dielectric layer formed over a lower n-type gallium nitride (n-GaN) layer. A first aperture and a second aperture are formed through the dielectric layer and extending to the lower n-GaN layer, the second aperture being narrower than the first aperture. A mesa is formed within the first aperture by successively forming a mesa n-GaN layer, a mesa MQW layer above the mesa n-GaN layer, and a mesa p-GaN layer above the mesa MQW layer. A pyramid having sidewalls is formed within the second aperture by successively forming a pyramidal n-GaN layer, a pyramidal MQW layer, and a pyramidal p-GaN layer. The mesa n-GaN layer, mesa MQW layer, and mesa p-GaN layer form a mesa LED. The pyramidal n-GaN layer, pyramidal MQW layer, and pyramidal p-GaN layer form a pyramid LED.

Abstract: A light emitting diode (LED) pixel array and method of fabrication thereof. A semiconductor wafer template includes a successively stacked first n-GaN layer, first MQW layer, p-GaN layer, and dielectric layer. A plurality of apertures is formed through the dielectric layer, extending to the p-GaN layer. A plurality of mesas is formed by forming, within each aperture, a second MQW layer and a second n-GaN layer above each second MQW layer. The second n-GaN layer and second MQW layer of each mesa form a respective mesa LED with the p-GaN layer. The first n-GaN layer and first MQW layer form a lower LED with the p-GaN layer.

Abstract: A light emitting diode (LED) pixel array and method of fabrication thereof. A semiconductor wafer template includes a successively stacked lower n-GaN layer, lower MQW layer, lower p-GaN layer, upper n-GaN layer, and dielectric layer. A plurality of apertures is formed through the dielectric layer, extending to the upper n-GaN layer. A plurality of mesas is formed by forming, within each aperture, a mesa n-GaN layer, a mesa MQW layer above each mesa n-GaN layer, and a mesa p-GaN layer above each mesa MQW layer. The mesa n-GaN layer, mesa MQW layer, and mesa p-GaN layer of each mesa form a respective mesa LED. The lower n-GaN layer, lower MQW layer, and lower p-GaN layer form a lower LED.

Abstract: A device includes a light emitting diode (LED) configured to emit light characterized by a peak wavelength, a lower wavelength band extending across lower wavelengths than the peak wavelength, and a higher wavelength band extending across higher wavelengths than the peak wavelength. The device also includes a reflector positioned in a first direction from the LED. The device also includes a distributed Bragg reflector (DBR) having a lower reflectance than the reflector, positioned in a second direction from the LED opposite the first direction, and configured to block light within a stopband overlapping a portion of the lower wavelength band or a portion of the higher wavelength band but not overlapping the peak wavelength, such that the DBR propagates filtered light in the second direction.

Abstract: A method of fabricating a semiconductor device includes forming, above a substrate surface, a plurality of distributed Bragg reflector (DBR) layers to form a DBR; forming, above the DBR, a first light emitting diode (LED) configured to emit light; and forming, above the first LED, a first reflector having a higher reflectance than the DBR, such that the first reflector and the DBR define a first resonant cavity having a length effective to collimate a first wavelength of the light emitted by the first LED and propagate the collimated light of the first wavelength through the DBR.

Abstract: A method of fabricating a semiconductor device having a distributed Bragg reflector (DBR) includes depositing, above a DBR deposition surface, a plurality of DBR layers to form a DBR, forming at least one aperture extending through the plurality of DBR layers to expose each DBR layer, and applying electrochemical etching to the plurality of DBR layers via the at least one aperture, thereby transforming at least one DBR layer of the plurality of DBR layers into a nanoporous structure.