Abstract: In one or more embodiments, the disclosure relates to a method of setting a photolithography exposure machine, comprising: forming on a photolithography mask test patterns and circuit patterns, transferring the patterns to a resin layer covering a wafer, measuring a critical dimension of each test pattern transferred, and determining a focus setting error value of the photolithography machine from the measure of the critical dimension of each pattern, the test patterns formed on the mask comprising a first reference test pattern and a second test pattern forming for a photon beam emitted by the photolithography machine and going through the mask, an optical path having a length different from an optical path formed by the first test pattern and the circuit patterns formed on the mask.

Abstract: In one or more embodiments, the disclosure relates to a method of setting a photolithography exposure machine, comprising: forming on a photolithography mask test patterns and circuit patterns, transferring the patterns to a resin layer covering a wafer, measuring a critical dimension of each test pattern transferred, and determining a focus setting error value of the photolithography machine from the measure of the critical dimension of each pattern, the test patterns formed on the mask comprising a first reference test pattern and a second test pattern forming for a photon beam emitted by the photolithography machine and going through the mask, an optical path having a length different from an optical path formed by the first test pattern and the circuit patterns formed on the mask.