Patents by Inventor Nicolay Kovarsky

Nicolay Kovarsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8980382
    Abstract: Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
    Type: Grant
    Filed: July 15, 2010
    Date of Patent: March 17, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Nitin Ingle, Abhijit Basu Mallick, Earl Osman Solis, Nicolay Kovarsky, Olga Lyubimova
  • Publication number: 20110129616
    Abstract: Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
    Type: Application
    Filed: July 15, 2010
    Publication date: June 2, 2011
    Applicant: Applied Materials, Inc.
    Inventors: Nitin Ingle, Abhijit Basu Mallick, Earl Osman Solis, Nicolay Kovarsky, Olga Lyubimova
  • Publication number: 20070181441
    Abstract: The present invention generally includes deposition and electropolishing methods and an apparatus comprising an electroplating cell and auxiliary cell. In one embodiment for electropolishing a substrate, a cycle is performed in which the substrate is alternately placed in an anolyte solution to remove material and a catholyte solution to deposit material. As the cycle is repeated successively, an exposed layer disposed on the substrate is planarized. In another embodiment, an auxiliary cell may be used to deposit the ultrathin seed layer prior to electroplating.
    Type: Application
    Filed: August 4, 2006
    Publication date: August 9, 2007
    Inventors: Nicolay Kovarsky, Aron Rosenfeld, Michael Yang, Ivan Rodriguez
  • Publication number: 20070175752
    Abstract: Embodiments of the invention provide a method for plating copper into features formed on a semiconductor substrate. The method includes positioning the substrate in a plating cell, wherein the plating cell includes a catholyte volume containing a catholyte solution, an anolyte volume containing an anolyte solution, an ionic membrane positioned to separate the anolyte volume from the catholyte volume, and an anode positioned in the anolyte volume. The method further includes applying a plating bias between the anode and the substrate, plating copper ions onto the substrate from the catholyte solution, and replenishing the copper ions plated onto the substrate from the catholyte solution with copper ions transported from the anolyte solution via the ionic membrane, wherein the catholyte solution has a copper concentration of greater than about 51 g/L.
    Type: Application
    Filed: October 6, 2006
    Publication date: August 2, 2007
    Inventors: Michael Yang, Nicolay Kovarsky
  • Patent number: 7247222
    Abstract: Embodiments of the invention may generally provide a small volume electrochemical plating cell. The plating cell generally includes a fluid basin configured to contain a plating solution therein, the fluid basin having a substantially horizontal weir. The cell further includes an anode positioned in a lower portion of the fluid basin, the anode having a plurality of parallel channels formed therethrough, and a base member configured to receive the anode, the base member having a plurality of groves formed into an anode receiving surface, each of the plurality of grooves terminating into an annular drain channel. A membrane support assembly configured to position a membrane immediately above the anode in a substantially planar orientation with respect to the anode surface is provided, the membrane support assembly having a plurality of channels and bores formed therein.
    Type: Grant
    Filed: October 9, 2002
    Date of Patent: July 24, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Michael X. Yang, Dmitry Lubomirsky, Yezdi Dordi, Saravjeet Singh, Sheshraj Tulshibagwale, Nicolay Kovarsky
  • Publication number: 20070125657
    Abstract: The present invention teaches a method for depositing a copper seed layer onto a substrate surface, generally onto a barrier layer. The barrier layer may include a refractory metal and/or a group 8, 9 or 10 metal. The method includes cathodically pre-treating the substrate in an acid-containing solution. The substrate is then placed into a copper solution (pH?7.0) that includes complexed copper ions and a current or bias is applied across the substrate surface. The complexed copper ions are reduced to deposit a copper seed layer onto the barrier layer. In one aspect, a complex alkaline bath is then used to electrochemically plate a gapfill layer on the substrate surface, followed by overfill in the same bath. In another aspect, an acidic bath ECP gapfill process and overfill process follow the alkaline seed layer process.
    Type: Application
    Filed: October 21, 2005
    Publication date: June 7, 2007
    Inventors: Zhi-Wen Sun, Renren He, Nicolay Kovarsky, John Dukovic, Aron Rosenfeld, Lei Zhu
  • Publication number: 20070068819
    Abstract: The present invention generally relates to apparatus and methods for plating conductive materials on a substrate. One embodiment of the present invention provides an apparatus for plating a conductive material on a substrate. The apparatus comprises a fluid basin configured to retain an electrolyte, a contact ring configured to support the substrate and contact the substrate electrically, and an anode assembly disposed in the fluid basin, wherein the anode assembly comprises a plurality of anode elements arranged in rows.
    Type: Application
    Filed: May 16, 2006
    Publication date: March 29, 2007
    Inventors: Saravjeet Singh, Manoocher Birang, Nicolay Kovarsky, Aron Rosenfeld
  • Publication number: 20070004201
    Abstract: Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.
    Type: Application
    Filed: March 20, 2006
    Publication date: January 4, 2007
    Inventors: Dmitry Lubomirsky, Timothy Weidman, Arulkumar Shanmugasundram, Nicolay Kovarsky, Kapila Wijekoon
  • Publication number: 20060266655
    Abstract: Embodiments of the invention generally include a method and intermediate plating solution for plating metal onto a substrate surface. The method generally includes filling the features and/or growing a film layer on the field areas by plating a metal from a first solution on a seed layer under an applied first current, wherein the first solution includes an acid in an amount sufficient to provide a first solution pH of about 6 or less, copper ions, and at least one suppressor. The method may further include substantially filling features by plating metal ions from a second solution onto the substrate under an applied second current to form a metal layer, wherein the second solution includes an acid in an amount sufficient to provide a second solution pH of from about 0.
    Type: Application
    Filed: June 21, 2006
    Publication date: November 30, 2006
    Inventors: ZHI-WEN SUN, BO ZHENG, NICOLAY KOVARSKY, YOU WANG, TOSHIYUKI NAKAGAWA, TERUKAZU AITANI, KOJI HARA, DAXIN MAO, MICHAEL YANG
  • Publication number: 20060266653
    Abstract: A method and apparatus for measuring differential voltages in an electrolyte of an electrochemical plating cell. Current densities are calculated from the measured differential voltages and correlated to thickness values of plated materials. A real time thickness profile may be generated from the thickness values.
    Type: Application
    Filed: May 25, 2005
    Publication date: November 30, 2006
    Inventors: Manoocher Birang, Nicolay Kovarsky, Bernardo Donoso
  • Publication number: 20060237307
    Abstract: Embodiments of the invention may generally provide a small volume electrochemical plating cell. The plating cell generally includes a fluid basin configured to contain a plating solution therein, the fluid basin having a substantially horizontal weir. The cell further includes an anode positioned in a lower portion of the fluid basin, the anode having a plurality of parallel channels formed therethrough, and a base member configured to receive the anode, the base member having a plurality of groves formed into an anode receiving surface, each of the plurality of grooves terminating into an annular drain channel. A membrane support assembly configured to position a membrane immediately above the anode in a substantially planar orientation with respect to the anode surface is provided, the membrane support assembly having a plurality of channels and bores formed therein.
    Type: Application
    Filed: June 22, 2006
    Publication date: October 26, 2006
    Inventors: Michael Yang, Dmitry Lubomirsky, Yezdi Dord, Saravjeet Singh, Sheshraj Tulshibagwale, Nicolay Kovarsky
  • Publication number: 20060124468
    Abstract: Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, a separation membrane positioned across the fluid basin above the anode assembly, a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member.
    Type: Application
    Filed: February 1, 2006
    Publication date: June 15, 2006
    Inventors: Nicolay Kovarsky, Michael Yang, Dmitry Lubomirsky
  • Publication number: 20060108228
    Abstract: Embodiments of the invention may further provide an electrochemical plating cell. The cell includes a fluid basin configured to contain an electrolyte plating solution, a fluid tank in fluid communication with the fluid basin and being configured to supply the electrolyte plating solution thereto, and an electrolyte solution stabilization device in fluid communication with the fluid tank. The stabilization device includes a fluid container having a fluid inlet and a fluid outlet, and an absorbent material positioned in the fluid container in a fluid path between the fluid inlet and the fluid outlet, wherein the absorbent material is configured to leach a solution additive into the electrolyte plating solution to maintain the solution additive within a processing window during an electrochemical plating process.
    Type: Application
    Filed: November 17, 2005
    Publication date: May 25, 2006
    Inventors: Nicolay Kovarsky, Chunman Yu, Yezdi Dordi
  • Patent number: 7025861
    Abstract: Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, a separation membrane positioned across the fluid basin above the anode assembly, a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member.
    Type: Grant
    Filed: February 6, 2003
    Date of Patent: April 11, 2006
    Assignee: Applied Materials
    Inventors: Nicolay Kovarsky, Michael Yang, Dmitry Lubomirsky
  • Publication number: 20050284751
    Abstract: A fluid processing cell for depositing a conductive layer onto a substrate is provided. The cell includes a catholyte solution fluid volume positioned to receive a substrate for plating, a first anolyte solution fluid volume at least partially ionically separated from the catholyte solution fluid volume, an anode assembly positioned in the first anolyte solution fluid volume, a second anolyte solution fluid volume, the second anolyte solution fluid volume being electrically isolated from the first anode solution fluid volume and at least partially in ionic communication with the cathode solution fluid volume, and a cathode counter electrode positioned in the second anolyte solution volume.
    Type: Application
    Filed: June 28, 2004
    Publication date: December 29, 2005
    Inventors: Nicolay Kovarsky, Anzhong Chang, Saravjeet Singh, You Wang, John Dukovic
  • Publication number: 20050274620
    Abstract: In one example, an apparatus for dispensing copper into a plating solution is provided which includes a cartridge containing an inlet and an outlet and comprising a copper metal source therein, a dosing device containing an oxidizing agent in fluid communication with the inlet, a tank for containing the plating solution in fluid communication with the outlet, a pH electrode adapted to contact the plating solution, and a system controller which receives input from the pH electrode and sends output to the dosing device.
    Type: Application
    Filed: December 6, 2004
    Publication date: December 15, 2005
    Inventors: Nicolay Kovarsky, John Dukovic
  • Publication number: 20050274622
    Abstract: Embodiments of a method of copper plating a substrate surface with a group VIII metal layer have been described. In one embodiment, a method of plating copper on a substrate surface with a group VIII metal layer comprises pre-treating the substrate surface by removing a group VIII metal surface oxide layer and/or surface contaminants and plating the substrate in a copper plating solution comprising about 50 g/l to about 300 g/l of sulfuric acid at an initial plating current higher than the critical current density to deposit a continuous copper layer on the substrate surface. The Pre-treating the substrate can be accomplished by annealing the substrate in an environment with a hydrogen-containing gas environment and/or a non-reactive gas(es) to Ru, by a cathodic treatment in an acid-containing bath, or by immersing the substrate in an acid-containing bath.
    Type: Application
    Filed: December 15, 2004
    Publication date: December 15, 2005
    Inventors: Zhi-Wen Sun, Renren He, Nicolay Kovarsky, You Wang
  • Publication number: 20050218000
    Abstract: Embodiments of the invention provide a method for conditioning contacts of an electrochemical metal plating system. The method includes deplating the contacts by supplying a reversed biased energy and monitoring electrical measurements of the plating system in real-time such that the endpoint of a deplating process can be determined. In different embodiments, the method includes the use of a constant current or voltage, variable current or voltage, or combinations thereof for conditioning the contacts.
    Type: Application
    Filed: April 6, 2005
    Publication date: October 6, 2005
    Inventors: Hooman Hafezi, Joseph Yahalom, Roman Mostovoy, Bo Zheng, Aron Rosenfeld, You Wang, Nicolay Kovarsky
  • Publication number: 20050145499
    Abstract: A method and apparatus for plating a metal layer onto a substrate is provided. The plating apparatus includes two or more segments of an anode and an auxiliary electrode. The plating method includes a first stage of plating a thin metal seed uniformly in the center of the substrate and near the edges of the substrate before metal gap filling and bulk metal plating are performed. The thin metal seed is plated on the substrate surface by applying a current pulse provided by a first power supply and a second power supply which are in electrical communication in reverse polarity with one segment of the anode and the auxiliary electrode. Thereafter, gap filling of features is performed by applying a second current pulse where current is provided to all segments of the anode.
    Type: Application
    Filed: March 3, 2005
    Publication date: July 7, 2005
    Inventors: Nicolay Kovarsky, You Wang, John Dukovic, Ivan Rodriguez
  • Publication number: 20050133374
    Abstract: A method and apparatus for removing waste material from a plating solution is disclosed. The invention generally provides a plating cell having an electrolyte inlet and an electrolyte drain, an electrolyte storage unit in fluid communication with the electrolyte inlet, and a diffusion dialysis chamber in fluid communication with the electrolyte drain and the electrolyte storage unit. The diffusion dialysis chamber is generally configured to receive at least a portion of used electrolyte solution and remove waste material therefrom in order to provide a refreshed electrolyte solution to the electrolyte storage unit. A method generally includes supplying an electrolyte solution to a copper plating cell, plating copper onto a substrate in the plating cell with the electrolyte solution, removing used electrolyte solution from the plating cell, and refreshing a portion of the used electrolyte solution with a diffusion dialysis device.
    Type: Application
    Filed: December 18, 2003
    Publication date: June 23, 2005
    Inventors: Nicolay Kovarsky, Dmitry Lubomirsky