Patents by Inventor Nicole E. Thomas

Nicole E. Thomas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Composition and process for selectively etching metal nitrides
    Patent number: 9831088
    Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: November 28, 2017
    Assignee: ENTEGRIS, INC.
    Inventors: Tianniu Chen, Nicole E. Thomas, Steven Lippy, Jeffrey A. Barnes, Emanuel I. Cooper, Peng Zhang
  • Compositions and methods for the selective removal of silicon nitride
    Patent number: 9158203
    Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?1.
    Type: Grant
    Filed: July 15, 2014
    Date of Patent: October 13, 2015
    Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Emanuel I. Cooper, Eileen Sparks, William R. Bowers, Mark A. Biscotto, Kevin P. Yanders, Michael B. Korzenski, Prerna Sonthalia, Nicole E. Thomas
  • COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OF SILICON NITRIDE
    Publication number: 20140326633
    Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?.
    Type: Application
    Filed: July 15, 2014
    Publication date: November 6, 2014
    Inventors: Emanuel I. COOPER, Eileen Sparks, William R. Bowers, Mark A. Biscotto, Kevin P. Yanders, Michael B. Korzenski, Prema Sonthalia, Nicole E. Thomas
  • Compositions and methods for the selective removal of silicon nitride
    Patent number: 8778210
    Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?1.
    Type: Grant
    Filed: December 21, 2007
    Date of Patent: July 15, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Emanuel I. Cooper, Eileen R. Sparks, William R. Bowers, Mark A. Biscotto, Kevin P. Yanders, Michael B. Korzenski, Prerna Sonthalia, Nicole E. Thomas
  • COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING METAL NITRIDES
    Publication number: 20140038420
    Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.
    Type: Application
    Filed: October 6, 2011
    Publication date: February 6, 2014
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Tianniu Chen, Nicole E. Thomas, Steven Lippy, Jeffrey A. Barnes, Emanuel I. Cooper, Peng Zhang
  • COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OF SILICON NITRIDE
    Publication number: 20100176082
    Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?1.
    Type: Application
    Filed: December 21, 2007
    Publication date: July 15, 2010
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Emanuel I. Cooper, Eileen Sparks, William R. Bowers, Mark A. Biscotto, Kevin P. Yanders, Michael B. Korzenski, Prerna Sonthalia, Nicole E. Thomas