Abstract: Photodetector arrangements, designs and fabrication techniques are described related to semiconductor nanostructures. Arrangements and techniques are described which utilize a nano-patterned template for growing semiconductor nanostructures and/or heterostructures. Resulting photodetectors are also described.

Abstract: A system and method for detecting partial discharges or arcing in wiring or cables is disclosed. The system employs a high-voltage AC power source to generate a high-voltage, low-current AC waveform, which is propagated through a selected wire, which in turn, produces the return signal. The return signal is processed using a signal processor and the analyzed for indications of the occurrence of a partial discharge. The method detects damage to a selected wire by utilizing high voltage, low current AC waveforms to induce partial discharges in a controlled manner and detecting a return signal resulting from the discharge.

Abstract: A light emitting device comprised of a light emitting semiconductor active region disposed on a substrate comprised of GaN having a dislocation density less than 105 per cm2 is provided.

Abstract: A systems and methods are provided for detecting defects in aircraft wiring, and more particularly, for detecting partial discharges or arcing in wiring or cables. A high frequency current transformer (HFCT) is fixingly positioned in contact with a wire so that the wire is encircled by the HFCT. Partial discharges from a damaged wire so encircled will induce a current in the HFCT proportional to the current of the discharge. The HFCT comprises at least one conductive coil-like pattern formed onto a flexible insulating material, said insulating material having slits between each coil-turn of the coil-like pattern; and a core of flexible material fitted between the coil-turns through said slits.

Abstract: A cable, system and method for detecting partial discharges or arcing in wiring or cables via fiber optics are provided. The cable for detecting partial discharges includes a conductor for carrying electrical signals; at least one fluorescent optical fiber for detecting light generated by a partial discharge; and a first transparent layer surrounding the conductor for supporting the at least one fluorescent optical fiber generally parallel to the conductor. By employing a fluorescent optical fiber, incident light generated by a partial discharge along a length of the optical fiber will be transmitted via the optical fiber to an optical receiver for determining a partial discharge has occurred.

Abstract: A photodetector (100, 200, 300) comprising a gallium nitride substrate, at least one active layer (104, 302) disposed on the substrate (102, 202, 306), and a conductive contact structure (106, 210, 308) affixed to the active layer (104, 302) and, in some embodiments, the substrate (102, 202, 306). The invention includes photodetectors (100, 200, 300) having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers (104, 302) may comprise Ga1-x-yAlxInyN1-z-w PzAsw, or, preferably, Ga1-xAlxN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 105 cm?2. A method of making the photodetector (100, 200, 300) is also disclosed.

Abstract: A light emitting device comprised of a light emitting semiconductor active region disposed on a substrate comprised of GaN having a dislocation density less than 105 per cm2 is provided.