Patents by Inventor Nicole Kuhl

Nicole Kuhl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Systems and methods for two-sided etch of a semiconductor substrate
    Patent number: 6624082
    Abstract: A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.
    Type: Grant
    Filed: July 16, 2001
    Date of Patent: September 23, 2003
    Assignee: Mattson Technology, Inc.
    Inventors: Laizhong Luo, Ying Holden, Rene George, Robert Guerra, Allan Wiesnoski, Nicole Kuhl, Craig Ranft, Sai Mantripragada
  • Systems and methods for two-sided etch of a semiconductor substrate
    Publication number: 20020017364
    Abstract: A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.
    Type: Application
    Filed: July 16, 2001
    Publication date: February 14, 2002
    Inventors: Laizhong Luo, Ying Holden, Rene George, Robert Guerra, Allan Wiesnoski, Nicole Kuhl, Craig Ranft, Sai Mantripragada
  • Systems and methods for two-sided etch of a semiconductor substrate
    Patent number: 6335293
    Abstract: A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.
    Type: Grant
    Filed: July 12, 1999
    Date of Patent: January 1, 2002
    Assignee: Mattson Technology, Inc.
    Inventors: Laizhong Luo, Ying Holden, Rene George, Robert Guerra, Allan Wiesnoski, Nicole Kuhl, Craig Ranft, Sai Mantripragada
  • SYSTEMS AND METHODS FOR TWO-SIDED ETCH OF A SEMICONDUCTOR SUBSTRATE
    Publication number: 20010009177
    Abstract: A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.
    Type: Application
    Filed: July 12, 1999
    Publication date: July 26, 2001
    Inventors: LAIZHONG LUO, YING HOLDEN, RENE GEORGE, ROBERT GUERRA, ALLAN WEISNOSKI, NICOLE KUHL, CRAIG RANFT, SAI MANTRIPRAGADA, MASAYUKI KOJIMA, MAKI SHIMODA, TAKAHIRO CHIBA, HIDEYUKI SUGA, KAZUBIKO KAWAI