Abstract: A composition comprising a source of metal ions and at least one leveling agent comprising a linear or branched, polymeric imidazolium compound comprising the structural unit of formula L1 (L1) wherein R1, R2, R3 are each independently selected from an H atom and an organic radical having from 1 to 20 carbon atoms, R4 is a divalent, trivalent or mutlivalent organic radical which does not comprise a hydroxyl group in the a or ? position relative to the nitrogen atom of the imidazole rings is an integer.

Abstract: The present invention relates to a process for preparing hydrophobically associating macromonomers M and to the novel macromonomers prepared by means of the process according to the invention. The macromonomers M comprise a copolymerizable, ethylenically unsaturated group and a polyether structure in block form, the latter consisting of a polyethyleneoxy block and a hydrophobic polyalkyleneoxy block consisting of alkyleneoxy units having at least 4 carbon atoms. Optionally, the macromonomers M may have a terminal polyethyleneoxy block. The macromonomers prepared by the process according to the invention are suitable for reaction with further monomers, especially with acrylamide, to give a water-soluble, hydrophobically associating copolymer.

Abstract: The present invention relates to a process for preparing hydrophobically associating macromonomers M and to the novel macromonomers prepared by means of the process according to the invention. The macromonomers M comprise a copolymerizable, ethylenically unsaturated group and a polyether structure in block form, the latter consisting of a polyethyleneoxy block and a hydrophobic polyalkyleneoxy block consisting of alkyleneoxy units having at least 4 carbon atoms. Optionally, the macromonomers M may have a terminal polyethyleneoxy block. The macromonomers prepared by the process according to the invention are suitable for reaction with further monomers, especially with acrylamide, to give a water-soluble, hydrophobically associating copolymer.

Abstract: The present invention relates to a copolymer with high cationic charge based on quaternized nitrogen-containing monomers, to cosmetic or pharmaceutical compositions which comprise at least one such copolymer, and to further uses of these copolymers.

Abstract: A composition comprising a source of metal ions and at least one leveling agent comprising a linear or branched, polymeric imidazolium compound comprising the structural unit of formula L1 (L1) wherein R1, R2, R3 are each independently selected from an H atom and an organic radical having from 1 to 20 carbon atoms, R4 is a divalent, trivalent or mutlivalent organic radical which does not comprise a hydroxyl group in the ? or ? position relative to the nitrogen atom of the imidazole rings is an integer.

Abstract: An embodiment of the present invention is a technique to prevent reliability failures in semiconductor devices. A trench is patterned in a polyimide layer over a guard ring having a top metal layer. A passivation layer is etched at bottom of the trench. A capping layer is deposited on the trench over the etched passivation layer. The capping layer and the top metal layer form a mechanical strong interface to prevent a crack propagation.

Abstract: An embodiment of the present invention is a technique to prevent reliability failures in semiconductor devices. A trench is patterned in a polyimide layer over a guard ring having a top metal layer. A passivation layer is etched at bottom of the trench. A capping layer is deposited on the trench over the etched passivation layer. The capping layer and the top metal layer form a mechanical strong interface to prevent a crack propagation.

Abstract: The present invention relates to a copolymer with high cationic charge based on quaternized nitrogen-containing monomers, to cosmetic or pharmaceutical compositions which comprise at least one such copolymer, and to further uses of these copolymers.

Abstract: An embodiment of the present invention is a technique to prevent reliability failures in semiconductor devices. A trench is patterned in a polyimide layer over a guard ring having a top metal layer. A passivation layer is etched at bottom of the trench. A capping layer is deposited on the trench over the etched passivation layer. The capping layer and the top metal layer form a mechanical strong interface to prevent a crack propagation.

Abstract: The present invention relates to compositions comprising at least one polymer a) having cationic and/or cationogenic groups and a molecular weight Mw in the range from 10 000 to 5 million and at least one polymer b) which has been prepared in the presence of polymer a).

Abstract: An embodiment of the present invention is a technique to prevent reliability failures in semiconductor devices. A trench is patterned in a polyimide layer over a guard ring having a top metal layer. A passivation layer is etched at bottom of the trench. A capping layer is deposited on the trench over the etched passivation layer. The capping layer and the top metal layer form a mechanical strong interface to prevent a crack propagation.

Abstract: An embodiment of the present invention is a technique to prevent reliability failures in semiconductor devices. A trench is patterned in a polyimide layer over a guard ring having a top metal layer. A passivation layer is etched at bottom of the trench. A capping layer is deposited on the trench over the etched passivation layer. The capping layer and the top metal layer form a mechanical strong interface to prevent a crack propagation.

Abstract: An embodiment of the present invention is a technique to prevent reliability failures in semiconductor devices. A trench is patterned in a polyimide layer over a guard ring having a top metal layer. A passivation layer is etched at bottom of the trench. A capping layer is deposited on the trench over the etched passivation layer. The capping layer and the top metal layer form a mechanical strong interface to prevent a crack propagation.