Patents by Inventor NICOLE R. REARDON

NICOLE R. REARDON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Insulating a via in a semiconductor substrate
    Patent number: 10079175
    Abstract: Insulating a via in a semiconductor substrate, including: depositing, in the via, a dielectric layer; depositing, in the via, a barrier layer; allowing the barrier layer to oxidize; and depositing, in the via, a conducting layer.
    Type: Grant
    Filed: May 22, 2017
    Date of Patent: September 18, 2018
    Assignee: International Business Machines Corporation
    Inventors: Mukta G. Farooq, Jennifer A. Oakley, Kevin S. Petrarca, Nicole R. Reardon, Andrew H. Simon
  • INSULATING A VIA IN A SEMICONDUCTOR SUBSTRATE
    Publication number: 20170256447
    Abstract: Insulating a via in a semiconductor substrate, including: depositing, in the via, a dielectric layer; depositing, in the via, a barrier layer; allowing the barrier layer to oxidize; and depositing, in the via, a conducting layer.
    Type: Application
    Filed: May 22, 2017
    Publication date: September 7, 2017
    Inventors: MUKTA G. FAROOQ, JENNIFER A. OAKLEY, KEVIN S. PETRARCA, NICOLE R. REARDON, ANDREW H. SIMON
  • Insulating a via in a semiconductor substrate
    Patent number: 9728450
    Abstract: Insulating a via in a semiconductor substrate, including: depositing, in the via, a dielectric layer; depositing, in the via, a barrier layer; allowing the barrier layer to oxidize; and depositing, in the via, a conducting layer.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: August 8, 2017
    Assignee: International Business Machines Corporation
    Inventors: Mukta G. Farooq, Jennifer A. Oakley, Kevin S. Petrarca, Nicole R. Reardon, Andrew H. Simon
  • INSULATING A VIA IN A SEMICONDUCTOR SUBSTRATE
    Publication number: 20160379876
    Abstract: Insulating a via in a semiconductor substrate, including: depositing, in the via, a dielectric layer; depositing, in the via, a barrier layer; allowing the barrier layer to oxidize; and depositing, in the via, a conducting layer.
    Type: Application
    Filed: June 25, 2015
    Publication date: December 29, 2016
    Inventors: MUKTA G. FAROOQ, JENNIFER A. OAKLEY, KEVIN S. PETRARCA, NICOLE R. REARDON, ANDREW H. SIMON