Patents by Inventor Nicolo' FRAZZETTO
Nicolo' FRAZZETTO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11946158Abstract: An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.Type: GrantFiled: May 22, 2023Date of Patent: April 2, 2024Assignee: STMICROELECTRONICS S.r.l.Inventors: Ruggero Anzalone, Nicolo' Frazzetto, Francesco La Via
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Patent number: 11830724Abstract: Various embodiments provide an apparatus and method for fabricating a wafer, such as a SiC wafer. The apparatus includes a support having a plurality of arms for supporting a substrate. The arms allows for physical contact between the support and the substrate to be minimized. As a result, when the substrate is melted, surface tension between the arms and molten material is reduced, and the molten material will be less likely to cling to the support.Type: GrantFiled: March 15, 2022Date of Patent: November 28, 2023Assignee: STMICROELECTRONICS S.R.L.Inventors: Ruggero Anzalone, Nicolo' Frazzetto
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Publication number: 20230295836Abstract: An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.Type: ApplicationFiled: May 22, 2023Publication date: September 21, 2023Applicant: STMICROELECTRONICS S.r.l.Inventors: Ruggero ANZALONE, Nicolo' FRAZZETTO, Francesco La Via
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Patent number: 11692283Abstract: An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.Type: GrantFiled: September 1, 2020Date of Patent: July 4, 2023Assignee: STMICROELECTRONICS S.r.l.Inventors: Ruggero Anzalone, Nicolo′ Frazzetto, Francesco La Via
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Publication number: 20220208541Abstract: Various embodiments provide an apparatus and method for fabricating a wafer, such as a SiC wafer. The apparatus includes a support having a plurality of arms for supporting a substrate. The arms allows for physical contact between the support and the substrate to be minimized. As a result, when the substrate is melted, surface tension between the arms and molten material is reduced, and the molten material will be less likely to cling to the support.Type: ApplicationFiled: March 15, 2022Publication date: June 30, 2022Applicant: STMICROELECTRONICS S.R.L.Inventors: Ruggero ANZALONE, Nicolo' FRAZZETTO
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Patent number: 11309177Abstract: Various embodiments provide an apparatus and method for fabricating a wafer, such as a SiC wafer. The apparatus includes a support having a plurality of arms for supporting a substrate. The arms allows for physical contact between the support and the substrate to be minimized. As a result, when the substrate is melted, surface tension between the arms and molten material is reduced, and the molten material will be less likely to cling to the support.Type: GrantFiled: November 6, 2018Date of Patent: April 19, 2022Assignee: STMICROELECTRONICS S.r.l.Inventors: Ruggero Anzalone, Nicolo′ Frazzetto
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Publication number: 20210062361Abstract: An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.Type: ApplicationFiled: September 1, 2020Publication date: March 4, 2021Inventors: Ruggero ANZALONE, Nicolo' FRAZZETTO, Francesco LA VIA
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Publication number: 20200144047Abstract: Various embodiments provide an apparatus and method for fabricating a wafer, such as a SiC wafer. The apparatus includes a support having a plurality of arms for supporting a substrate. The arms allows for physical contact between the support and the substrate to be minimized. As a result, when the substrate is melted, surface tension between the arms and molten material is reduced, and the molten material will be less likely to cling to the support.Type: ApplicationFiled: November 6, 2018Publication date: May 7, 2020Inventors: Ruggero ANZALONE, Nicolo' FRAZZETTO
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Patent number: 10475673Abstract: Various embodiments provide a reaction chamber including a support, a receptacle, and a sponge. The support includes a plurality of bars that are spaced from each other by a plurality of openings. Each of the bars has side surfaces that are slanted or tilted downward such that melted material may readily flow through the openings. The support is covered with a coating of silicon carbide to prevent materials from adhering to the support. The receptacle underlies the support and is configured to collect any melted material that is drained through the openings of the support. The sponge is positioned in the receptacle and under the support. The sponge is configured to absorb any melted material that is collected by the receptacle.Type: GrantFiled: September 26, 2017Date of Patent: November 12, 2019Assignee: STMICROELECTRONICS S.R.L.Inventors: Ruggero Anzalone, Nicolo Frazzetto, Aldo Raciti, Marco Antonio Salanitri, Giuseppe Abbondanza, Giuseppe D'Arrigo
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Publication number: 20180090350Abstract: Various embodiments provide a reaction chamber including a support, a receptacle, and a sponge. The support includes a plurality of bars that are spaced from each other by a plurality of openings. Each of the bars has side surfaces that are slanted or tilted downward such that melted material may readily flow through the openings. The support is covered with a coating of silicon carbide to prevent materials from adhering to the support. The receptacle underlies the support and is configured to collect any melted material that is drained through the openings of the support. The sponge is positioned in the receptacle and under the support. The sponge is configured to absorb any melted material that is collected by the receptacle.Type: ApplicationFiled: September 26, 2017Publication date: March 29, 2018Inventors: Ruggero ANZALONE, Nicolo FRAZZETTO, Aldo RACITI, Marco Antonio SALANITRI, Giuseppe ABBONDANZA, Giuseppe D'ARRIGO
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Patent number: 9257550Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.Type: GrantFiled: June 30, 2015Date of Patent: February 9, 2016Assignee: STMICROELECTRONICS S.R.L.Inventors: Donato Corona, Nicolo′ Frazzetto, Antonio Giuseppe Grimaldi, Corrado Iacono, Monica Micciche′
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Publication number: 20150325654Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.Type: ApplicationFiled: June 30, 2015Publication date: November 12, 2015Inventors: DONATO CORONA, NICOLO' FRAZZETTO, ANTONIO GIUSEPPE GRIMALDI, CORRADO IACONO, MONICA MICCICHE'
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Patent number: 9142666Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.Type: GrantFiled: August 30, 2011Date of Patent: September 22, 2015Assignee: STMICROELECTRONICS S.R.L.Inventors: Donato Corona, Nicolo′ Frazzetto, Antonio Giuseppe Grimaldi, Corrado Iacono, Monica Micciche′
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Patent number: 8525253Abstract: A semiconductor structure including a substrate of semiconductor material of a first type of conductivity; a first semiconductor layer set in direct electrical contact with the substrate on a first side of the substrate; a second semiconductor layer set in direct electrical contact with the substrate on a second side of the substrate; a first active electronic device formed in the first semiconductor layer; and a second active electronic device formed in the second semiconductor layer.Type: GrantFiled: October 27, 2010Date of Patent: September 3, 2013Assignee: STMicroelectronics S.r.l.Inventors: Monica Micciche′, Antonio Giuseppe Grimaldi, Gaetano Bazzano, Nicolò Frazzetto
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Publication number: 20120049902Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.Type: ApplicationFiled: August 30, 2011Publication date: March 1, 2012Applicant: STMICROELECTRONICS S.R.L.Inventors: Donato CORONA, Nicolo' FRAZZETTO, Antonio Giuseppe GRIMALDI, Corrado IACONO, Monica MICCICHE'
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Publication number: 20110095358Abstract: A semiconductor structure including a substrate of semiconductor material of a first type of conductivity; a first semiconductor layer set in direct electrical contact with the substrate on a first side of the substrate; a second semiconductor layer set in direct electrical contact with the substrate on a second side of the substrate; a first active electronic device formed in the first semiconductor layer; and a second active electronic device formed in the second semiconductor layer.Type: ApplicationFiled: October 27, 2010Publication date: April 28, 2011Applicant: STMicrolectronics S.r.l.Inventors: Monica Micciche', Antonio Giuseppe Grimaldi, Gaetano Bazzano, Nicolò Frazzetto