Patents by Inventor Nicolo Ronchi

Nicolo Ronchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Schottky diode structure and method of fabrication
    Patent number: 9711601
    Abstract: The disclosed technology relates to a device including a diode. In one aspect, the device includes a lower group III metal nitride layer and an upper group III metal nitride layer and a heterojunction formed therebetween, where the heterojunction extends horizontally and is configured to form a two-dimensional electron gas (2DEG) that is substantially confined in a vertical direction and within the lower group III metal nitride layer. The device additionally includes a cathode forming an ohmic contact with the upper group III metal nitride layer. The device additionally includes an anode, which includes a first portion that forms a Schottky barrier contact with the upper group III metal nitride layer, and a second portion that is separated vertically from the upper group III metal nitride layer by a layer of dielectric material.
    Type: Grant
    Filed: October 17, 2013
    Date of Patent: July 18, 2017
    Assignee: IMEC
    Inventors: Stefaan Decoutere, Nicolo Ronchi
  • SCHOTTKY DIODE STRUCTURE AND METHOD OF FABRICATION
    Publication number: 20140103357
    Abstract: The disclosed technology relates to a device including a diode. In one aspect, the device includes a lower group III metal nitride layer and an upper group III metal nitride layer and a heterojunction formed therebetween, where the heterojunction extends horizontally and is configured to form a two-dimensional electron gas (2DEG) that is substantially confined in a vertical direction and within the lower group III metal nitride layer. The device additionally includes a cathode forming an ohmic contact with the upper group III metal nitride layer. The device additionally includes an anode, which includes a first portion that forms a Schottky barrier contact with the upper group III metal nitride layer, and a second portion that is separated vertically from the upper group III metal nitride layer by a layer of dielectric material.
    Type: Application
    Filed: October 17, 2013
    Publication date: April 17, 2014
    Applicant: IMEC
    Inventors: STEFAAN DECOUTERE, Nicolo Ronchi