Patents by Inventor Niels GEYPEN

Niels GEYPEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10725386
    Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: July 28, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
  • Patent number: 10670974
    Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the structure having diffractive properties, the apparatus comprising: focusing optics configured to focus illumination radiation comprising a plurality of wavelengths onto the structure; a first detector configured to detect at least part of the illumination radiation which has been diffracted from the structure; and additional optics configured to produce, on at least a portion of the first detector, a wavelength-dependent spatial distribution of different wavelengths of the illumination radiation which has been diffracted from the structure, wherein the first detector is arranged to detect at least a non-zero diffraction order of the illumination radiation which has been diffracted from the structure.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: June 2, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Gerrit Jacobus Hendrik Brussaard, Petrus Wilhelmus Smorenburg, Teis Johan Coenen, Niels Geypen, Peter Danny Van Voorst, Sander Bas Roobol
  • Publication number: 20190278190
    Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
    Type: Application
    Filed: May 24, 2019
    Publication date: September 12, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Scott Anderson MIDDLEBROOKS, Niels GEYPEN, Hendrik Jan Hidde SMILDE, Alexander STRAAIJER, Maurits VAN DER SCHAAR, Markus Gerardus Martinus Maria VAN KRAAIJ
  • Patent number: 10401739
    Abstract: A method of aligning a pair of complementary diffraction patterns having a first complementary diffraction pattern and a second complementary diffraction pattern, the pair of complementary diffraction patterns obtained from performance of a metrology process on a structure formed by a lithographic process. The method includes performing at least a fine alignment stage to align the pair of complementary diffraction patterns. The alignment stage includes: interpolating measured values of the first complementary diffraction pattern over at least a portion of a detector area; and minimizing a residual between measured values in the second complementary diffraction pattern and corresponding interpolated values from the interpolation of the first complementary diffraction pattern, by one or both of translation and rotation of the second complementary diffraction pattern.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: September 3, 2019
    Assignee: ASML Netherlands B.V.
    Inventor: Niels Geypen
  • Publication number: 20190204757
    Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the structure having diffractive properties, the apparatus comprising: focusing optics configured to focus illumination radiation comprising a plurality of wavelengths onto the structure; a first detector configured to detect at least part of the illumination radiation which has been diffracted from the structure; and additional optics configured to produce, on at least a portion of the first detector, a wavelength-dependent spatial distribution of different wavelengths of the illumination radiation which has been diffracted from the structure, wherein the first detector is arranged to detect at least a non-zero diffraction order of the illumination radiation which has been diffracted from the structure.
    Type: Application
    Filed: December 27, 2018
    Publication date: July 4, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Gerrit Jacobus Hendrik BRUSSAARD, Petrus Wilhelmus Smorenburg, Teis Johan Coenen, Niels Geypen, Peter Danny Van Voorst, Sander Bas Roobol
  • Patent number: 10331041
    Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: June 25, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
  • Publication number: 20190155171
    Abstract: Disclosed is a method of performing a measurement in an inspection apparatus; and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.
    Type: Application
    Filed: January 23, 2019
    Publication date: May 23, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Nan LIN, Arie Jeffrey Den Boeff, Sander Bas Roobol, Simon Gijsbert Josephus Mathijssen, Niels Geypen
  • Patent number: 10234771
    Abstract: Disclosed is a method of performing a measurement in an inspection apparatus, and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: March 19, 2019
    Assignee: ASML Netherlands B.V
    Inventors: Nan Lin, Arie Jeffrey Den Boef, Sander Bas Roobol, Simon Gijsbert Josephus Mathijssen, Niels Geypen
  • Publication number: 20190079410
    Abstract: A method of aligning a pair of complementary diffraction patterns having a first complementary diffraction pattern and a second complementary diffraction pattern, the pair of complementary diffraction patterns obtained from performance of a metrology process on a structure formed by a lithographic process. The method includes performing at least a fine alignment stage to align the pair of complementary diffraction patterns. The alignment stage includes: interpolating measured values of the first complementary diffraction pattern over at least a portion of a detector area; and minimizing a residual between measured values in the second complementary diffraction pattern and corresponding interpolated values from the interpolation of the first complementary diffraction pattern, by one or both of translation and rotation of the second complementary diffraction pattern.
    Type: Application
    Filed: September 7, 2018
    Publication date: March 14, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventor: Niels Geypen
  • Publication number: 20190049860
    Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
    Type: Application
    Filed: October 15, 2018
    Publication date: February 14, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Scott Anderson MIDDLEBROOKS, Niels GEYPEN, Hendrik Jan Hidde SMILDE, Alexander STRAAIJER, Maurits VAN DER SCHAAR, Markus Gerardus Martinus Maria VAN KRAAIJ
  • Patent number: 10126662
    Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: November 13, 2018
    Assignee: ASML Netherlands B.V.
    Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
  • Publication number: 20180196357
    Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
    Type: Application
    Filed: March 5, 2018
    Publication date: July 12, 2018
    Applicant: ASML Netherlands B.V.
    Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
  • Patent number: 9910366
    Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
    Type: Grant
    Filed: July 18, 2014
    Date of Patent: March 6, 2018
    Assignee: ASML Netherlands B.V.
    Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
  • Publication number: 20170315456
    Abstract: Disclosed is a method of performing a measurement in an inspection apparatus, and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.
    Type: Application
    Filed: April 14, 2017
    Publication date: November 2, 2017
    Applicant: ASML Netherlands B.V.
    Inventors: Nan LIN, Arie Jeffrey DEN BOEF, Sander Bas ROOBOL, Simon Gijsbert Josephus MATHIJSSEN, Niels GEYPEN
  • Publication number: 20160161864
    Abstract: Disclosed is a method of measuring a parameter of a litho-graphic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
    Type: Application
    Filed: July 18, 2014
    Publication date: June 9, 2016
    Applicant: ASML Netherlands B.V.
    Inventors: Scott Anderson MIDDLEBROOKS, Niels GEYPEN, Hendrik Jan Hidde SMILDE, Alexander STRAAIJER, Maurits VAN DER SCHAAR, Markus Gerardus Martinus Maria VAN KRAAIJ