Patents by Inventor Niels Posthuma

Niels Posthuma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12002680
    Abstract: A method includes providing a semiconductor structure including: a substrate; a layer stack with each layer of the layer stack including a Group III-nitride material; and a p-type doped GaN layer on the layer stack. The method also includes providing, on the GaN layer, a metal bi-layer including a first metal layer in contact with GaN layer and a second metal layer on the first metal layer and having a lower sheet resistance than the first metal layer. The method also includes performing a patterning process upon the metal bi-layer and the p-type doped GaN layer such that a first periphery of the first metal layer is aligned to a second periphery of the second metal layer and such that a first cross section of the metal bi-layer is smaller than a second cross section of the GaN layer parallel to the first cross section.
    Type: Grant
    Filed: June 11, 2021
    Date of Patent: June 4, 2024
    Assignee: IMEC VZW
    Inventors: Niels Posthuma, Stefaan Decoutere
  • Publication number: 20220181159
    Abstract: A method includes providing a semiconductor structure including: a substrate; a layer stack with each layer of the layer stack including a Group III-nitride material; and a p-type doped GaN layer on the layer stack. The method also includes providing, on the GaN layer, a metal bi-layer including a first metal layer in contact with GaN layer and a second metal layer on the first metal layer and having a lower sheet resistance than the first metal layer. The method also includes performing a patterning process upon the metal bi-layer and the p-type doped GaN layer such that a first periphery of the first metal layer is aligned to a second periphery of the second metal layer and such that a first cross section of the metal bi-layer is smaller than a second cross section of the GaN layer parallel to the first cross section.
    Type: Application
    Filed: June 11, 2021
    Publication date: June 9, 2022
    Inventors: Niels Posthuma, Stefaan Decoutere
  • Patent number: 11114537
    Abstract: Example embodiments relate to enhancement-mode high electron mobility transistors. One embodiment includes a method for manufacturing an enhancement-mode high electron mobility transistor. The method includes providing a stack of layers. The stack of layers includes a substrate, a III-V channel layer over the substrate, a III-V barrier layer on the channel layer, a p-doped III-V layer on the III-V barrier layer, and a Schottky contact interlayer on the p-doped III-V layer. The p-doped III-V layer has a first surface area. The Schottky contact interlayer has a second surface area. The second surface area is less than the first surface area. The second surface area leaves a peripheral part of a top surface of the p-doped III-V layer uncovered. The method also includes depositing a metal gate on the Schottky contact interlayer.
    Type: Grant
    Filed: January 21, 2020
    Date of Patent: September 7, 2021
    Assignee: IMEC VZW
    Inventors: Steve Stoffels, Niels Posthuma, Brice De Jaeger
  • Publication number: 20200235218
    Abstract: Example embodiments relate to enhancement-mode high electron mobility transistors. One embodiment includes a method for manufacturing an enhancement-mode high electron mobility transistor. The method includes providing a stack of layers. The stack of layers includes a substrate, a III-V channel layer over the substrate, a III-V barrier layer on the channel layer, a p-doped III-V layer on the III-V barrier layer, and a Schottky contact interlayer on the p-doped III-V layer. The p-doped III-V layer has a first surface area. The Schottky contact interlayer has a second surface area. The second surface area is less than the first surface area. The second surface area leaves a peripheral part of a top surface of the p-doped III-V layer uncovered. The method also includes depositing a metal gate on the Schottky contact interlayer.
    Type: Application
    Filed: January 21, 2020
    Publication date: July 23, 2020
    Inventors: Steve Stoffels, Niels Posthuma, Brice De Jaeger
  • Patent number: 10559677
    Abstract: The disclosure relates to a method of fabricating an enhancement mode Group III-nitride HEMT device and a Group III-nitride structure fabricated therefrom. One example embodiment is a method for fabricating an enhancement mode Group III-nitride HEMT device. The method includes providing a structure. The structure includes a substrate having a main surface. The structure also includes a layer stack overlying the main surface. Each layer of the layer stack includes a Group III-nitride material. The structure further includes a capping layer on the layer stack. The method also includes forming a recessed gate region by removing, in a gate region, at least the capping layer by performing an etch process, thereby exposing a top surface of an upper layer of the layer stack. The method further includes forming a p-type doped GaN layer in the recessed gate region and on the capping layer by performing a non-selective deposition process.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: February 11, 2020
    Assignee: IMEC VZW
    Inventors: Shuzhen You, Niels Posthuma
  • Publication number: 20170179272
    Abstract: The disclosure relates to a method of fabricating an enhancement mode Group III-nitride HEMT device and a Group III-nitride structure fabricated therefrom. One example embodiment is a method for fabricating an enhancement mode Group III-nitride HEMT device. The method includes providing a structure. The structure includes a substrate having a main surface. The structure also includes a layer stack overlying the main surface. Each layer of the layer stack includes a Group III-nitride material. The structure further includes a capping layer on the layer stack. The method also includes forming a recessed gate region by removing, in a gate region, at least the capping layer by performing an etch process, thereby exposing a top surface of an upper layer of the layer stack. The method further includes forming a p-type doped GaN layer in the recessed gate region and on the capping layer by performing a non-selective deposition process.
    Type: Application
    Filed: November 17, 2016
    Publication date: June 22, 2017
    Applicant: IMEC VZW
    Inventors: Shuzhen You, Niels Posthuma
  • Patent number: 9496430
    Abstract: The disclosed technology generally relates to forming patterns of doped semiconductor regions, and more particularly to methods of forming such patterns in fabricating photovoltaic devices. In one aspect, a method of forming a pattern of different doped regions at the same side of a semiconductor substrate comprises providing a patterned doped layer on a surface of the semiconductor substrate at predetermined locations where at least one first doped region is to be formed. The method additionally includes selectively growing at least one second doped region epitaxially at the same side of the semiconductor substrate using the patterned doped layer as an epitaxial growth mask. Furthermore, selectively growing comprises driving dopants from the patterned doped layer into the semiconductor substrate to form the first doped region at the predetermined locations.
    Type: Grant
    Filed: February 4, 2014
    Date of Patent: November 15, 2016
    Assignee: IMEC
    Inventors: Maria Recaman Payo, Niels Posthuma
  • Publication number: 20160163695
    Abstract: An integrated circuit comprising a first III-N transistor having a source region and a second III-N transistor having a source region, both transistors being monolithically integrated on a common silicon substrate of a first doping type and separated from each-other by an isolation region, the substrate comprising underneath the first transistor a well of a first doping type electrically connected to the source region of the first transistor and comprising underneath the second transistor a well of a second doping type electrically connected to the source region of the second transistor, thereby forming a junction diode in the substrate between the sources of the first and the second transistor.
    Type: Application
    Filed: December 9, 2015
    Publication date: June 9, 2016
    Applicant: IMEC VZW
    Inventors: Stefaan Decoutere, Niels Posthuma, Shuzhen You
  • Publication number: 20140179054
    Abstract: The disclosed technology generally relates to forming patterns of doped semiconductor regions, and more particularly to methods of forming such patterns in fabricating photovoltaic devices. In one aspect, a method of forming a pattern of different doped regions at the same side of a semiconductor substrate comprises providing a patterned doped layer on a surface of the semiconductor substrate at predetermined locations where at least one first doped region is to be formed. The method additionally includes selectively growing at least one second doped region epitaxially at the same side of the semiconductor substrate using the patterned doped layer as an epitaxial growth mask. Furthermore, selectively growing comprises driving dopants from the patterned doped layer into the semiconductor substrate to form the first doped region at the predetermined locations.
    Type: Application
    Filed: February 4, 2014
    Publication date: June 26, 2014
    Applicant: IMEC
    Inventors: Maria Recaman Payo, Niels Posthuma
  • Patent number: 8664525
    Abstract: A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal, e.g., aluminum, is then formed on the passivation layer. The structure is heated so that the germanium surface makes contact with the contact layer. The aluminum contact layer can be configured for use as a mirroring surface for the back surface of the device. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.
    Type: Grant
    Filed: January 26, 2006
    Date of Patent: March 4, 2014
    Assignees: IMEC, Umicore, N.V.
    Inventors: Niels Posthuma, Giovanni Flamand, Jef Poortmans, Johan van der Heide
  • Patent number: 7964789
    Abstract: A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal is then formed on the passivation. The structure is heated so that the germanium surface makes contact with the contact layer. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.
    Type: Grant
    Filed: May 6, 2004
    Date of Patent: June 21, 2011
    Assignees: IMEC, Umicore NV
    Inventors: Niels Posthuma, Giovanni Flamand, Jef Poortmans
  • Patent number: 7960645
    Abstract: A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal is then formed on the passivation. The structure is heated so that the germanium surface makes contact with the contact layer. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.
    Type: Grant
    Filed: October 7, 2005
    Date of Patent: June 14, 2011
    Assignees: IMEC, Umicore NV
    Inventors: Niels Posthuma, Giovanni Flamand, Jef Poortmans
  • Publication number: 20070227589
    Abstract: A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal is then formed on the passivation. The structure is heated so that the germanium surface makes contact with the contact layer. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.
    Type: Application
    Filed: October 7, 2005
    Publication date: October 4, 2007
    Inventors: Niels Posthuma, Giovanni Flamand, Jef Poortmans
  • Publication number: 20060207651
    Abstract: A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal, e.g., aluminum, is then formed on the passivation layer. The structure is heated so that the germanium surface makes contact with the contact layer. The aluminum contact layer can be configured for use as a mirroring surface for the back surface of the device. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.
    Type: Application
    Filed: January 26, 2006
    Publication date: September 21, 2006
    Inventors: Niels Posthuma, Giovanni Flamand, Jef Poortmans, Johan van der Heide
  • Publication number: 20050000566
    Abstract: A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal is then formed on the passivation. The structure is heated so that the germanium surface makes contact with the contact layer. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.
    Type: Application
    Filed: May 6, 2004
    Publication date: January 6, 2005
    Inventors: Niels Posthuma, Giovanni Flamand, Jef Poortmans