Patents by Inventor Nigel Ellis
Nigel Ellis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9947662Abstract: A CMOS circuit comprises CMOS MOSFETs having n-type and p-type gates on the same substrate, wherein the substrate is divided into regions of n-type and p-type diffusions, and those diffusions are contained within a deeper n-type diffusion, used to junction isolate components within the deeper n-type diffusion from components outside of the deeper n-type diffusion.Type: GrantFiled: June 27, 2007Date of Patent: April 17, 2018Assignee: X-FAB SEMICONDUCTOR FOUNDRIES AGInventors: Paul Ronald Stribley, John Nigel Ellis
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Patent number: 9540875Abstract: Walk-through safety devices for ladders meeting ANSI and OSHA standards are positioned at the top end of the ladder and are comprised of two, juxtapose-position, mirror image members. One each is mounted on a respective ladder side rail, Each member includes a sleeve (or rectangular tube) which slides down over a respective ladder side rail, a pressure bar which is tightened against the side rail with a knob operated screw, a pivoting engaging lock plate, and a lock plate tab cover plate. A horizontal hand grip framework is held outboard of the ladder side rails vertically upward, being at an angle of about 14.5 degrees upward from the longitudinal axis of the sleeve and side rail when resting against a structure. The framework is held in that position by a flared tube which is bent in two directions.Type: GrantFiled: January 23, 2015Date of Patent: January 10, 2017Inventor: J. Nigel Ellis
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Publication number: 20160215563Abstract: Walk-through safety devices for ladders meeting ANSI and OSHA standards are positioned at the top end of the ladder and are comprised of two, juxtapose-position, mirror image members. One each is mounted on a respective ladder side rail, Each member includes a sleeve (or rectangular tube) which slides down over a respective ladder side rail, a pressure bar which is tightened against the side rail with a knob operated screw, a pivoting engaging lock plate, and a lock plate tab cover plate. A horizontal hand grip framework is held outboard of the ladder side rails vertically upward, being at an angle of about 14.5 degrees upward from the longitudinal axis of the sleeve and side rail when resting against a structure. The framework is held in that position by a flared tube which is bent in two directions.Type: ApplicationFiled: January 23, 2015Publication date: July 28, 2016Inventor: J. Nigel Ellis
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Patent number: 9163489Abstract: A method is described of injecting CO2 into an aquifer or a depleted hydrocarbon reservoir (211) via at least one injection well (202) that penetrates said aquifer or reservoir, wherein the injection well is provided with an injection tubing (203) that is in sealing engagement with the injection well. The injection tubing terminates at or immediately above the interval of the aquifer or the reservoir into which the CO2 is to be injected and the injection tubing is provided with a fluid injection control valve (208) at or near the bottom thereof which is closed or closes when the pressure above the valve is less than a pre-set pressure value and opens or reopens when the pressure above the valve is at or greater than said pre-set pressure value, the pre-set pressure value being selected such that the CO2 in the injection tubing is maintained in a liquid or supercritical state.Type: GrantFiled: March 10, 2010Date of Patent: October 20, 2015Assignee: BP Alternative Energy International LimitedInventors: Stephen John Cawley, Hrvoje Galic, John Nigel Ellis Mason
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Patent number: 8455955Abstract: An array of transistors arranged next to each other on a semiconductor material forming a substrate, the substrate comprising p-well or n-well diffusions forming a body, which diffusions are used as the body regions of the transistors, each transistor comprising a source, a drain and a gate, wherein the array of transistors further comprises at least one electrical connection to the body, wherein said electrical connection is shared by at least two transistors of said array. Also disclosed is a semiconductor device comprising at least one source, at least one drain, at least one gate between the at least one source and the at least one drain, and at least one structure of the same material as the at least one gate which does not have a connection means for electrical connection to the at least one gate.Type: GrantFiled: June 29, 2007Date of Patent: June 4, 2013Assignee: X-Fab Semiconductor Foundries AGInventors: Paul Ronald Stribley, John Nigel Ellis
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Patent number: 8316611Abstract: A portable skylight replacement safety assembly that includes a first and second support frames releasably connected to each other and having a plurality of support handles and support members which extend substantially perpendicularly from the first support frame for supporting the first support frame on and/or over the skylight on a working surface at a predetermined distance.Type: GrantFiled: January 19, 2012Date of Patent: November 27, 2012Inventors: J. Nigel Ellis, John Witty
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Patent number: 8251179Abstract: A portable safety ladder assembly having safety extensions to permit safe and easy access to landing areas, working platforms, scaffolds, etc. The safety extension members have a plurality of horizontal handgrips ergonomically designed to prevent falls from the ladder assembly when a user is ascending upward or descending downward thereon.Type: GrantFiled: June 30, 2011Date of Patent: August 28, 2012Inventors: James T. Anderson, J. Nigel Ellis
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Patent number: 8122673Abstract: A portable skylight replacement safety assembly that includes a first and second support frames releasably connected to each other and having a plurality of support handles and support members which extend substantially perpendicularly from the first support frame for supporting the first support frame on and/or over the skylight on a working surface at a predetermined distance.Type: GrantFiled: October 27, 2008Date of Patent: February 28, 2012Inventors: J. Nigel Ellis, John Whitty
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Patent number: 8120121Abstract: A semiconductor device including a first transistor in a substrate, a second transistor in the substrate, and a further device in the substrate. The second transistor and the further device are arranged to operate at a second voltage which is higher than a first voltage. The first voltage is the (normal) voltage of operation of the first transistor, and the first transistor is isolated from the second voltage.Type: GrantFiled: September 13, 2007Date of Patent: February 21, 2012Assignees: X-Fab Semiconductor Foundries AG, Melexis Tessenderlo N.V.Inventors: John Nigel Ellis, Piet De Pauw
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Publication number: 20120003043Abstract: A method is described of injecting CO2 into an aquifer or a depleted hydrocarbon reservoir (211) via at least one injection well (202) that penetrates said aquifer or reservoir, wherein the injection well is provided with an injection tubing (203) that is in sealing engagement with the injection well. The injection tubing terminates at or immediately above the interval of the aquifer or the reservoir into which the CO2 is to be injected and the injection tubing is provided with a fluid injection control valve (208) at or near the bottom thereof which is closed or closes when the pressure above the valve is less than a pre-set pressure value and opens or reopens when the pressure above the valve is at or greater than said pre-set pressure value, the pre-set pressure value being selected such that the CO2 in the injection tubing is maintained in a liquid or supercritical state.Type: ApplicationFiled: March 10, 2010Publication date: January 5, 2012Inventors: Stephen John Cawley, Hrvoje Galic, John Nigel Ellis Mason
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Publication number: 20110253478Abstract: A portable safety ladder assembly having safety extensions to permit safe and easy access to landing areas, working platforms, scaffolds, etc. The safety extension members have a plurality of horizontal handgrips ergonomically designed to prevent falls from the ladder assembly when a user is ascending upward or descending downward thereon.Type: ApplicationFiled: June 30, 2011Publication date: October 20, 2011Inventors: James T. Anderson, J. Nigel Ellis
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Patent number: 7992681Abstract: A safety ladder assembly and a safety extension used in combination with a ladder suitable to permit safe and easy access to the landing areas, working platforms, scaffolds, etc. The assembly includes safety extension members having a plurality of horizontal handgrips ergonomically designed to prevent falls from the ladder when a user is ascending upward or descending downward.Type: GrantFiled: February 26, 2007Date of Patent: August 9, 2011Inventors: James T. Anderson, J Nigel Ellis
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Publication number: 20100059851Abstract: A CMOS circuit comprises at least one high voltage transistor (having gate and drain operating voltages of greater than 8V) and at least one high frequency capable transistor (having a maximum switching frequency of between 100 MHz and 1000 GHz) wherein said transistors are integrated on the same semiconductor substrate so as to allow the simple integration of high voltage circuits and RF (radio frequency) CMOS circuits on the same integrated circuit.Type: ApplicationFiled: June 27, 2007Publication date: March 11, 2010Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AGInventors: John Nigel Ellis, Paul Ronald Stribley, Jun Fu
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Publication number: 20100019343Abstract: A semiconductor device comprises: a first transistor in a substrate; a second transistor in said substrate; and a further device in said substrate, wherein the second transistor and the further device are arranged to operate at a second voltage which is higher than a first voltage, wherein the first voltage is the (normal) voltage of operation of the first transistor, and wherein the first transistor is isolated from the second voltage.Type: ApplicationFiled: September 13, 2007Publication date: January 28, 2010Inventors: John Nigel Ellis, Piet De Pauw
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Publication number: 20090315119Abstract: A CMOS circuit comprises CMOS MOSFETs having n-type and p-type gates on the same substrate, wherein the substrate is divided into regions of n-type and p-type diffusions, and those diffusions are contained within a deeper n-type diffusion, used to junction isolate components within the deeper n-type diffusion from components outside of the deeper n-type diffusion.Type: ApplicationFiled: June 27, 2007Publication date: December 24, 2009Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AGInventors: Paul Ronald Stribley, John Nigel Ellis
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Publication number: 20090315080Abstract: An array of transistors arranged next to each other on a semiconductor material forming a substrate, the substrate comprising p-well or n-well diffusions forming a body, which diffusions are used as the body regions of the transistors, each transistor comprising a source, a drain and a gate, wherein the array of transistors further comprises at least one electrical connection to the body, wherein said electrical connection is shared by at least two transistors of said array. Also disclosed is a semiconductor device comprising at least one source, at least one drain, at least one gate between the at least one source and the at least one drain, and at least one structure of the same material as the at least one gate which does not have a connection means for electrical connection to the at least one gate.Type: ApplicationFiled: June 29, 2007Publication date: December 24, 2009Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AGInventors: Paul Ronald Stribley, John Nigel Ellis
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Publication number: 20090250724Abstract: A bipolar transistor is formed on a heavily doped silicon substrate (1). An epitaxially grown collector (12) is formed on the substrate (1) and comprises silicon containing germanium at least at the top of the collector (12). An epitaxial base (13) is formed on the collector (12) to have the opposite polarity and also comprises silicon containing germanium at least at the bottom of the base (13). An emitter is formed at the top of the base (13) and comprises polysilicon doped to have the same polarity as the collector (12).Type: ApplicationFiled: December 14, 2005Publication date: October 8, 2009Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AGInventor: John Nigel Ellis
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Publication number: 20090206314Abstract: A safety rail assembly for mounting on a deck of a transport carrier which transports and supports thereon at least one automobile having at least one of passenger and driver-side doors. The portable safety rail assembly includes a handrail extending horizontally relative to the upper surface of the deck and support posts for supporting the handrail. Each support post may be removeably mounted to the deck to permit selective vertical displacement of the handrail relative to the upper surface of the deck for positioning the handrail at a desired height above the upper edge of a door of the transported vehicle. The desired height permits unobstructed opening and closing of the doors and safe entrance into and egress from the interior of the automobile.Type: ApplicationFiled: March 9, 2009Publication date: August 20, 2009Inventor: J. Nigel Ellis
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Patent number: 7527461Abstract: A safety rail assembly for mounting on a deck of a transport carrier which transports and supports thereon at least one automobile having at least one of passenger and driver-side doors. The portable safety rail assembly includes a handrail extending horizontally relative to the upper surface of the deck and support posts for supporting the handrail. Each support post may be removeably mounted to the deck to permit selective vertical displacement of the handrail relative to the upper surface of the deck for positioning the handrail at a desired height above the upper edge of a door of the transported vehicle. The desired height permits unobstructed opening and closing of the doors and safe entrance into and egress from the interior of the automobile.Type: GrantFiled: November 23, 2006Date of Patent: May 5, 2009Inventor: J. Nigel Ellis
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Patent number: D760917Type: GrantFiled: January 23, 2015Date of Patent: July 5, 2016Inventor: J. Nigel Ellis