Abstract: A working machine includes either front and rear wheels or a pair of endless tracks supporting an undercarriage, a drive arrangement including a prime mover configured to provide motive power to propel the working machine, a superstructure connected to the undercarriage via a rotary connector, and a working arm connected to the superstructure. The machine also includes a fuel tank assembly comprising at least one fuel tank defining an internal volume for storing fuel to be supplied to the prime mover, wherein the at least one fuel tank is interposed between the superstructure and the undercarriage.

Abstract: Physical barriers (210) are present between neighbouring pixels (200) on a circuit substrate (100) of an active-matrix electroluminescent display device, particularly with LEDs (25) of organic semiconductor materials. The invention forms these barriers (210) with metal or other electrically-conductive material (240) that serves as an interconnection between a first circuit element (21, 4, 5, 6, 140, 150, 160, T1, T2, Tm, Tg, Ch) of the circuit substrate and a second circuit element (400, 400s, 23), for example, a sensor (400s) of a sensor array supported over the pixel array. The conductive barrier material (240) is insulated (40) at the sides of the barriers adjacent to the LEDs and has an un-insulated top connection area (240t) at which the second circuit element is connected to the conductive barrier material (240).

Abstract: An active matrix display device comprises an array of display pixels, with each pixel comprising an EL display element, a light-dependent device for detecting the brightness of the display element and a drive transistor circuit for driving a current through the display element. The drive transistor is controlled in response to the light-dependent device output so that ageing compensation can be implemented. The light-dependent device is located laterally of the area of light emitting material of the EL display element. In this way, the light-dependent device does not cause step coverage problems and can be integrated into the pixel layout without affecting the pixel aperture. Furthermore, the light dependent device can extend alongside the full length of the area of light emitting material so that it receives light input from a large part of the display element area.

Abstract: A flexible flat panel display which exhibits fabric-like behavior, comprising a substrate (10) formed of an elastomeric material, preferably with a layer of textile material (14) embedded therein. The substrate (10) is arranged and configured so as to have a modulus of elasticity such that the display can be curved over at least two radii of curvature simultaneously and/or stretched in one or more directions under normal working conditions. The resultant display can be incorporated into, for example, clothing and the like. A method of manufacturing a flexible flat panel display is also described.

Abstract: An active matrix display device comprises an array of display pixels provided over a common substrate (60). Each pixel has an upwardly emitting current-driven light emitting display element (2) comprising a lower electrode (74) and an upper substantially transparent electrode (80a. A light sensitive device (27) for sensing the display element (2) light output is positioned between the substrate (60) and the display element (2), and a drive transistor (22) is controlled in response to the light-sensitive device (27) output. The lower electrode (74) of the display element is partially transmissive to transmit at most 20% of the light incident on the lower electrode, at least a portion of the transmitted light being directed to the underlying light-sensitive device (27).

Abstract: An active matrix display device has pixels each with a light-sensitive device (84) for optical feedback functions. Each pixel has a light blocking structure (100) formed from the thin film layers of the display substrate in the proximity of the light-sensitive device (84) and substantially at the level of an input surface of the light sensitive device. This structure prevents the passage of light (g) to the light sensitive device from a substantially lateral direction.

Abstract: A colour active matrix electroluminescent (EL) display device has an array of pixels (10) comprising sets of red, green and blue emitting pixels, each of which pixels comprises an EL display element (20), a drive transistor (22) for driving a current through the display element, a storage capacitor (24) for storing a voltage used for addressing the drive transistor, and a discharge photosensitive element (40, 42) for discharging the storage capacitor in dependence on the light output of the display element. The discharge photosensitive elements (42) in the set of blue pixels comprise lateral photosensitive thin film devices, such as lateral thin film transistors or gated or ungated lateral photodiode devices, while the discharge photosensitive elements (40) in the set of red pixels, and preferably the set of green pixels as well, comprise vertical p i n photodiodes (40).

Abstract: An EL device comprising a substrate (11), a light emissive structure comprising three series connected LEDs on the substrate (LED 1, 2, 3). Considering the diode LED1, it comprises organic light emissive material disposed (16-1) between an underlying ITO anode (12-1) and an overlying cathode (17-1) that is electrically connected in series to the underlying anode (12-2) of the diode LED2 through the thickness of the organic light emissive material (16-1). The connection can be made by using a wetting agent to prevent the organic light emissive material disposed (16-1) covering contact region (19-1) on the anode (12-2) so that the overlying cathode (17-1) can make a series connection with the underlying anode (12-2).

Abstract: An active plate (2) for an active matrix display device (16), the active plate (2) comprising a substrate (4), a pixel area (6) and an adjacent drive circuit area (8). Both areas include polycrystalline silicon material formed by a process in which a metal is used to enhance the crystallisation process (MIC poly-Si), but only the MIC poly-Si in the drive circuit area (8) is subjected to an irradiation process using an energy beam (10). TFTs are fabricated with MIC poly-Si which have leakage currents in the off state sufficiently low for them to be acceptable for use as switching elements in the pixel area of matrix display devices. As only the drive circuit area (8) need be irradiated to provide poly-Si having the desired mobility, the time taken by the irradiation process can be significantly reduced.

Abstract: An electronic device (70) comprises a thin film transistor (TFT) (9,59), the TFT including a channel (16) defined in a layer of polycrystalline semiconductor material (10,48). The polycrystalline semiconductor material is produced by crystallising amorphous semiconductor material (2) using metal atoms (6) to promote the crystallisation process. The polycrystalline semiconductor material (10) includes an average concentration of metal atoms in the range 1.3×1018 to 7.5×1018 atoms/cm3. This enables polycrystalline semiconductor TFTs to be formed with leakage properties acceptable for use in active matrix displays using a metal induced crystallisation process of duration significantly less that previously thought necessary. Furthermore, this process duration reduction facilitates the reliable fabrication of poly-Si TFTs having bottom gates formed of metal.

Abstract: In the manufacture of an electronic device such as an active matrix display, a vertical amorphous PIN photodiode or similar thin-film diode (D) is advantageously integrated with a polysilicon TFT (TFT1, TFT2) in a manner that permits a good degree of optimisation of the respective TFT and diode properties while being compatible with the complex pixel context of the display. High temperature processes for making the active semiconductor film (10) of the TFT more crystalline than an active semiconductor film (40) of the diode and for forming the source and drain doped regions (s1,s2, d1,d2) of the TFT are carried out before depositing the active semiconductor film (40) of the diode. Thereafter, the lateral extent of the diode is defined by etching while protecting with an etch-stop film (30) an interconnection film (20) that can provide a doped bottom electrode region (41) of the diode as well as one of the doped regions (s2, g1) of the TFT.

Abstract: A method of manufacturing an electronic device comprising a thin film transistor (42), comprises forming a hydrogen-containing layer (22) over a semiconductor layer (10; 20), irradiating the hydrogen-containing layer so as to hydrogenate the semiconductor layer, and then forming electrodes (24; 26, 28) over the semiconductor layer. A short diffusion length and direct path is provided for the hydrogen thus allowing rapid hydrogenation of the semiconductor layer using relatively few, high-fluence laser pulses. The supporting substrate (12) is not heated significantly making the method particularly useful for TFFs on polymer substrates. Crystallisation and hydrogenation of the semiconductor layer can be executed in the same irradiation step.

Abstract: In an active matrix electroluminescent display device having an array of pixels, a drive transistor (22) and an electroluminescent display element (2) in each pixel are connected in series between a power line (26) for supplying or drawing a controllable current to or from the display element and a common potential line. The power line (26) and the common potential line each comprise a sheet electrode shared between all pixels of the array. In this arrangement, sheet electrodes are used both for the current supply to the EL display element and the current sink. This reduces considerably the line resistance.

Abstract: The display panel (1) has multiple picture elements (2), each picture element (2) having respective neighboring picture elements (2?). The picture elements (2) have a first electrode (3) and a second electrode (4) for the application of a potential difference between the first and the second electrode (3,4), and electrochromic material (5), which is present between the first and the second electrode (3,4). Electrical charge contained by the electrochromic material (5), induced by the potential difference, determines the color of the picture element (2). Color changes are provided by varying the electrical charge. Crosstalk, being coloration of neighboring picture elements (2?) when a picture element (2) is addressed, is adjustable by third electrodes (6) which adjust electrical currents between the picture element (2) addressed and their respective neighboring picture elements (2?).

Abstract: Physical barriers (210) are present between neighbouring pixels (200) on a circuit substrate (100) of an active-matrix display device, such as an electroluminescent display formed with LEDs (25) of organic semiconductor materials. The invention forms at least parts of the barriers (210) with metal or other electrically-conductive material (240) that is insulated (40) from the LEDs but connected to the circuitry (4, 5, 6, 9, 140, 150, 160, T1, T2, Tm, Tg, Ch etc.) within the substrate (100). This conductive barrier material (240) may back up or replace, for example, matrix addressing lines (150) and/or form an additional component either within the pixel array or outside. The additional component comprising the conductive barrier material (240) is advantageously a capacitor (Ch), or an inductor (L) or transformer (W), or even an aerial.

Abstract: A method of manufacturing an electronic device comprising a bottom-gate TFT (12) is provided, the method comprising the steps of: forming a doped amorphous silicon gate layer (26?) on a substrate, the gate layer defining a gate (26), forming a gate insulating layer (32) over the gate, forming an amorphous silicon active layer (28?) over the gate insulating layer and overlying at least part of the gate, and annealing the amorphous silicon active layer to form a polysilicon active layer (28). A thinner gate insulating layer can be used giving a TFT having a low threshold voltage.

Abstract: Physical barriers (210) are present between neighbouring pixels (200) on a circuit substrate (100) of an active-matrix electroluminescent display device, particularly with LEDs (25) of organic semi conductor materials. The invention forms these barriers (210) with metal or other electrically-conductive material (240), that is insulated (40) from the LEDs but connected circuitry within the substrate (100). This conductive barrier material (240) backs-up or replaces at least a part of the drive supply line (140,240) to which the LEDs are connected by a drive element T1. This transfers the problem of line resistance and associated voltage drop from within the circuit substrate (100), where it is severely constrained, to the much freer environment of the pixel barriers (210) on the substrate (100) where the conductive barrier material (240) can provide much lower resistance. Very large displays can be made with low voltage drops along this composite drive supply line (140,240).

Abstract: Physical barriers (210) are present between neighbouring pixels (200) on a circuit substrate (100) of an active-matrix electroluminescent display device, particularly with LEDs (25) of organic semiconductor materials. The invention forms these barriers (210) with metal or other electrically-conductive material (240) that serves as an interconnection between a first circuit element (21, 4, 5, 6, 140, 150, 160, T1, T2, Tm, Tg, Ch) of the circuit substrate and a second circuit element (400, 400s, 23), for example, a sensor (400s) of a sensor array supported over the pixel array. The conductive barrier material (240) is insulated (40) at the sides of the barriers adjacent to the LEDs and has an un-insulated top connection area (240t) at which the second circuit element is connected to the conductive barrier material (240).

Abstract: Physical barriers (210) are present between neighbouring pixels (200) on a circuit substrate (100) of an active-matrix electroluminescent display device, particularly with LEDs (25) of organic semiconductor materials. In order to reduce parasitic capacitance in the circuit substrate, the invention forms these barriers (210) with metal or other electrically-conductive material (240) that provides at least part of the signal lines (160) at a higher level than the circuit substrate (100). This conductive barrier material (240) is connected to the matrix circuitry within the substrate (100) but is insulated (40) at least at the sides adjacent to the LEDs (25). Preferably, an inter-capacitance guard line (9) is included in the circuit substrate (100) between the signal lines (160) and the circuitry in the substrate (100).