Abstract: Systems and methods for providing a phase modulator. The methods comprise creating a Field Effect Transistor (FET) by: placing a crystal structure displaying ambipolarity on a substrate comprising an oxide layer and a conductive silicon layer, the conductive silicon layer providing a gating electrical contact for the phase modulator, and forming source and drain electrical contacts on the crystal structure using e-beam lithography and an e-beam evaporator. The methods also comprising: annealing the FET to improve an interface between the crystal structure and the source and drain electrical contacts; and coating the FET with a dielectric layer to reduce or eliminate hysteresis so that a functionality of the phase modulator is improved.

Abstract: Systems and methods for providing a phase modulator. The methods comprise creating a Field Effect Transistor (FET) by: placing a crystal structure displaying ambipolarity on a substrate comprising an oxide layer and a conductive silicon layer, the conductive silicon layer providing a gating electrical contact for the phase modulator, and forming source and drain electrical contacts on the crystal structure using e-beam lithography and an e-beam evaporator. The methods also comprising: annealing the FET to improve an interface between the crystal structure and the source and drain electrical contacts; and coating the FET with a dielectric layer to reduce or eliminate hysteresis so that a functionality of the phase modulator is improved.

Abstract: A light-induced diode-like response in multi-layered MoSe2 field-effect transistors resulting from a difference in the size of the Schottky barriers between drain and source contacts, wherein each barrier can be modeled as a Schottky diode but with opposite senses of current rectification, wherein the diode response results from the light induced promotion of photo-generated carriers across the smaller barrier. The sense of current rectification can be controlled by the gate voltage which is able to modulate the relative amplitude between both barriers, yielding a photovoltaic response.